画像は参照用のみです。
FQD7N10LTM
MOSFET N-CH 100V 5.8A DPAK
- メーカー
- Mfr。パート #FQD7N10LTM
- パッケージ TO-252-3,DPAK(2Leads+Tab),SC-63
- データシート FQD7N10LTM DataSheet
- 在庫中2867
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| ProductStatus | Last Time Buy |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 5.8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 350mOhm @ 2.9A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 6 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 290 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 25W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
概要
Description
The FQD7N10LTM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a low on-resistance, which minimizes conduction losses and improves thermal performance, making it suitable for applications like power management, DC-DC converters, and motor control.
Key specifications typically include a maximum drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 7A, and a gate threshold voltage (Vgs) that allows for efficient switching. The device is housed in a compact package, optimizing space in electronic designs. Its fast switching capabilities contribute to its effectiveness in high-frequency applications, enhancing overall system efficiency.
The FQD7N10LTM's combination of performance, reliability, and thermal characteristics makes it a popular choice among engineers for various electronic and power circuit designs. Always consult the specific datasheet for detailed electrical characteristics and safe operating conditions.
Key specifications typically include a maximum drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 7A, and a gate threshold voltage (Vgs) that allows for efficient switching. The device is housed in a compact package, optimizing space in electronic designs. Its fast switching capabilities contribute to its effectiveness in high-frequency applications, enhancing overall system efficiency.
The FQD7N10LTM's combination of performance, reliability, and thermal characteristics makes it a popular choice among engineers for various electronic and power circuit designs. Always consult the specific datasheet for detailed electrical characteristics and safe operating conditions.
Features
The FQD7N10LTM is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of 100V, suitable for various power management applications.
2. Current Rating: Capable of handling continuous drain currents up to 7A, making it suitable for moderate power applications.
3. Low R_DS(on): Offers a low on-resistance, reducing conduction losses and improving efficiency in power conversion circuits.
4. Fast Switching Speed: Ideal for applications requiring rapid switching, such as in power supplies and converters.
5. Thermal Performance: Designed with a TO-220 package for effective heat dissipation, allowing for reliable operation under higher temperatures.
6. Gate Threshold Voltage (V_GS(th)): Typically around 2-4V, enabling it to be driven by standard logic levels.
These features make the FQD7N10LTM suitable for applications like DC-DC converters, motor drivers, and circuit protection.
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of 100V, suitable for various power management applications.
2. Current Rating: Capable of handling continuous drain currents up to 7A, making it suitable for moderate power applications.
3. Low R_DS(on): Offers a low on-resistance, reducing conduction losses and improving efficiency in power conversion circuits.
4. Fast Switching Speed: Ideal for applications requiring rapid switching, such as in power supplies and converters.
5. Thermal Performance: Designed with a TO-220 package for effective heat dissipation, allowing for reliable operation under higher temperatures.
6. Gate Threshold Voltage (V_GS(th)): Typically around 2-4V, enabling it to be driven by standard logic levels.
These features make the FQD7N10LTM suitable for applications like DC-DC converters, motor drivers, and circuit protection.
Package
The FQD7N10LTM is typically packaged in a TO-220 format. This package type is designed for high-power applications, providing efficient thermal management and ease of heat sinking.
Pinout
The FQD7N10LTM is an N-channel MOSFET with a pin count of 3. The functions of its pins are as follows:
1. Gate (G): This pin controls the switching of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET when it is in the "on" state.
3. Source (S): This pin is where the current exits the MOSFET when it is turned on. It is typically connected to ground in low-side switching applications.
The FQD7N10LTM is commonly used in power applications due to its low on-resistance and high current handling capabilities.
1. Gate (G): This pin controls the switching of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET when it is in the "on" state.
3. Source (S): This pin is where the current exits the MOSFET when it is turned on. It is typically connected to ground in low-side switching applications.
The FQD7N10LTM is commonly used in power applications due to its low on-resistance and high current handling capabilities.
Manufacturer
The FQD7N10LTM is manufactured by Fairchild Semiconductor, which is known for producing a wide range of semiconductor products, including power MOSFETs, diodes, and analog components. Fairchild Semiconductor specializes in high-performance and energy-efficient solutions for various industries, including automotive, computing, and consumer electronics. The company focuses on innovation in power management and signal processing technologies. Fairchild Semiconductor was acquired by ON Semiconductor in 2016, further expanding ON Semiconductor's portfolio and capabilities in the semiconductor market.
Application
The FQD7N10LTM is an N-channel MOSFET commonly used in power management applications, including DC-DC converters, motor drives, and switching power supplies. Its fast switching speeds and low on-resistance make it suitable for high-efficiency applications in consumer electronics, industrial automation, and renewable energy systems. Additionally, it can be used in audio amplifiers and other electronic circuits requiring efficient power delivery.
Equivalent
The FQD7N10LTM is a N-channel MOSFET. Equivalent products include the IRF740, STP7NK10Z, and MTP10N10E. Always verify specifications such as voltage, current ratings, and package type before substitution to ensure compatibility in your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25L3233FM1I-08Q
Macronix
-
MX25V1635FZNI
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V2033FM1I
Macronix
-
MX25V16066M2I02
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25U25643GZNI00
Macronix
-
MX25R1635FZUIH0
Macronix
-
MX25V1635FM2I
Macronix
-
MX25L6433FM2I-08G
Macronix