FQD18N20V2TM

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FQD18N20V2TM

MOSFET N-CH 200V 15A DPAK

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series QFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 15A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 140mOhm @ 7.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 26 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1080 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 83W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

概要

Description

The FQD18N20V2TM is a N-channel MOSFET designed for high-efficiency power management applications. It features a 20V maximum drain-source voltage and a continuous drain current rating of 18A, making it suitable for various switching and amplification tasks. This device is known for its low on-resistance and fast switching capabilities, which enhance performance in power conversion and regulation circuits.
The FQD18N20V2TM is commonly used in applications such as switching power supplies, motor drivers, and DC-DC converters. Its thermal performance is optimized for reliable operation in demanding environments, and it often comes in a TO-220 package, facilitating heat dissipation.
Overall, this MOSFET is an excellent choice for engineers seeking reliable components for efficient power management in electronic designs.

Features

The FQD18N20V2TM is an N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 18A, allowing it to handle significant power loads.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.18 ohms, enhancing efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling it to be driven easily by standard logic levels.
5. Package: It is available in a TO-220 package, which provides effective thermal management due to its larger surface area.
6. Applications: This MOSFET is suitable for applications such as power supplies, motor drives, and other switching applications where high efficiency and thermal performance are crucial.
These features make the FQD18N20V2TM a versatile choice for various electronic circuits requiring efficient power management.

Package

The FQD18N20V2TM is packaged in a TO-220 package type. This type of package is commonly used for power MOSFETs, providing good thermal performance and ease of mounting to heat sinks for heat dissipation.

Pinout

The FQD18N20V2TM is an N-channel MOSFET with a package type of TO-220. It features a total of three pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the switching of the MOSFET by applying a voltage.
2. Drain (D) - This pin is connected to the load and is where the current flows out of the MOSFET.
3. Source (S) - This pin is connected to ground or the negative side of the circuit, allowing current to flow into the MOSFET from the drain.
The FQD18N20V2TM is designed for high-voltage and high-current applications, making it suitable for power management and switching applications in various electronic devices.

Manufacturer

The FQD18N20V2TM is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor is recognized for its role in the development and production of high-performance semiconductor solutions. The company specializes in a wide range of products, including power management devices, analog ICs, and RF components. Fairchild's focus has traditionally been on serving the automotive, industrial, telecommunications, and consumer electronics markets, providing innovative solutions to meet various electronic needs. With a strong emphasis on technology and quality, Fairchild Semiconductor has established itself as a key player in the semiconductor industry.

Application

The FQD18N20V2TM is a N-channel MOSFET commonly used in power electronics applications such as switch-mode power supplies, DC-DC converters, and motor drives. Its high voltage and current handling capabilities make it suitable for applications in automotive electronics, industrial automation, and renewable energy systems. Additionally, it is utilized in inverter circuits and battery management systems for efficient power control and conversion.

Equivalent

The FQD18N20V2TM is an N-channel MOSFET. Equivalent products include:
1. IRF320
2. STP20NM60
3. MTP20N20
4. PSMN2R8-40BS
5. FQP18N20
Always confirm specifications such as voltage, current ratings, and Rds(on) to ensure compatibility in your application.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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