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FQD16N25CTM
MOSFET N-CH 250V 16A DPAK
- メーカー
- Mfr。パート #FQD16N25CTM
- パッケージ TO-252-3,DPAK(2Leads+Tab),SC-63
- データシート FQD16N25CTM DataSheet
- 在庫中4949
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 250 V |
| Current-ContinuousDrain(Id)@25°C | 16A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 270mOhm @ 8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 53.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1080 pF @ 25 V |
| PowerDissipation(Max) | 160W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
概要
Description
The FQD16N25CTM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It features a maximum drain-source voltage (V_DS) of 25V and a continuous drain current (I_D) rating of 16A, making it suitable for various electronic circuits, including power supplies, motor drivers, and DC-DC converters.
This MOSFET offers low on-resistance (R_DS(on)), ensuring minimal power loss during operation, which enhances overall circuit efficiency. The FQD16N25CTM is also characterized by a fast switching speed, enabling it to handle high-frequency applications effectively.
It comes in a TO-220 package, which facilitates easy heat dissipation and mounting on heatsinks. Additionally, the device is protected against thermal overload, making it reliable in demanding environments. Overall, the FQD16N25CTM is an ideal choice for designers seeking robust performance in power management circuits.
This MOSFET offers low on-resistance (R_DS(on)), ensuring minimal power loss during operation, which enhances overall circuit efficiency. The FQD16N25CTM is also characterized by a fast switching speed, enabling it to handle high-frequency applications effectively.
It comes in a TO-220 package, which facilitates easy heat dissipation and mounting on heatsinks. Additionally, the device is protected against thermal overload, making it reliable in demanding environments. Overall, the FQD16N25CTM is an ideal choice for designers seeking robust performance in power management circuits.
Features
The FQD16N25CTM is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 25V, making it suitable for low-voltage applications.
2. Current Rating: The device supports continuous drain current (I_D) of 16A, allowing for significant power handling.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.025Ω, which helps reduce power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 1V to 3V, enabling efficient driving with low gate voltages.
5. Package Type: It comes in a TO-220 package, facilitating effective heat dissipation and easy mounting on PCBs.
6. Fast Switching: Designed for high-speed switching applications, it minimizes transition losses.
7. Applications: Commonly used in DC-DC converters, power supplies, and motor drives.
These features make the FQD16N25CTM ideal for various electronic applications requiring efficient power management.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 25V, making it suitable for low-voltage applications.
2. Current Rating: The device supports continuous drain current (I_D) of 16A, allowing for significant power handling.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.025Ω, which helps reduce power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 1V to 3V, enabling efficient driving with low gate voltages.
5. Package Type: It comes in a TO-220 package, facilitating effective heat dissipation and easy mounting on PCBs.
6. Fast Switching: Designed for high-speed switching applications, it minimizes transition losses.
7. Applications: Commonly used in DC-DC converters, power supplies, and motor drives.
These features make the FQD16N25CTM ideal for various electronic applications requiring efficient power management.
Package
The FQD16N25CTM is packaged in a TO-220 form factor. This type of package is commonly used for power transistors, providing efficient heat dissipation and ease of mounting on heatsinks.
Pinout
The FQD16N25CTM is an N-channel MOSFET with a pin count of 3. The function of each pin is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load and receives the current when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative terminal of the power supply. It serves as the reference point for the drain current.
The FQD16N25CTM is commonly used in power management applications due to its low on-resistance and high current handling capabilities.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load and receives the current when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative terminal of the power supply. It serves as the reference point for the drain current.
The FQD16N25CTM is commonly used in power management applications due to its low on-resistance and high current handling capabilities.
Manufacturer
The FQD16N25CTM is manufactured by Fairchild Semiconductor, a company that specializes in the design and production of semiconductor solutions. Fairchild Semiconductor, now part of ON Semiconductor following its acquisition in 2016, is known for its focus on power management, analog, and interface products, catering to various industries including automotive, industrial, and consumer electronics. The FQD16N25CTM is a N-channel MOSFET, widely used for its efficiency in switching applications and power management in electronic devices.
Application
The FQD16N25CTM is an N-channel MOSFET commonly used in power applications, including DC-DC converters, motor drives, switch-mode power supplies, and inverters. Its low on-resistance and high-speed switching capabilities make it suitable for applications requiring efficient power management, such as renewable energy systems, electric vehicles, and consumer electronics. Additionally, it can be employed in heating elements and lighting control circuits.
Equivalent
The FQD16N25CTM is a N-channel MOSFET with a 25V rating and a 16A current capacity. Equivalent products include:
1. IRF3205
2. STP16NF06
3. FQP16N25
4. IRF151N
5. BSS138
Always check specific datasheets for exact specifications and suitability for your application.
1. IRF3205
2. STP16NF06
3. FQP16N25
4. IRF151N
5. BSS138
Always check specific datasheets for exact specifications and suitability for your application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
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