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FQB55N10TM

Name: FQB55N10TM
Rating: 4.7 (12 reviews)

MOSFET N-CH 100V 55A D2PAK

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Mfr。パート #FQB55N10TM
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データシート FQB55N10TM DataSheet
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仕様

Supplier	onsemi
Package	Tape & Reel (TR),Cut Tape (CT)
Series	QFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	100 V
Current-ContinuousDrain(Id)@25°C	55A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	26mOhm @ 27.5A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	98 nC @ 10 V
Vgs(Max)	±25V
InputCapacitance(Ciss)(Max)@Vds	2730 pF @ 25 V
PowerDissipation(Max)	3.75W (Ta), 155W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D²PAK (TO-263)

概要

Description

FQB55N10TM is an N-channel enhancement‑mode power MOSFET (high‑current, high‑voltage switch). It uses trench MOS technology for low on‑resistance and fast switching, making it suitable for switching power supplies, motor drives, and DC‑DC converters.
Key points:
- Likely rating around 100 V drain‑to‑source with about 50–60 A continuous current.
- On‑state resistance is in the tens of milliohms range at a 10 V gate drive (higher if driven at 4.5 V).
- Gate drive is referenced to source; typical drive voltages are 10 V for lowest RDS(on), though check the datasheet for exact thresholds and drive requirements.
- Package options commonly include surface‑mount types (e.g., D2PAK/DPAK) with the drain tab for heat sinking.
Use cases include switching power supplies, motor controllers, and other high‑current, high‑speed switching applications. For precise electrical specs, safe operating area, thermal data, and pinout, consult the latest ON Semi/Fairchild datasheet for FQB55N10TM.

Features

FQB55N10TM is an N-channel, enhancement-mode power MOSFET. Key features:
- Vds: 100 V
- Id: 55 A (continuous)
- Rds(on): typically about 0.12–0.25 Ω (depends on package and temperature)
- Gate: threshold ~2–4 V; optimize conduction at around 10 V Vgs (lower Vgs may increase Rds(on))
- Fast switching with low gate charge; good dv/dt/di/dt performance
- Avalanche energy capability for rugged switching
- Packages: multiple options (e.g., TO-220AB through-hole and surface-mount D²PAK/DPAK variants)
- Applications: switch-mode power supplies, DC-DC converters, motor drivers, power switches
- Thermal/SA: designed for good thermal performance with heatsinking; max junction temp ~150°C
- Compliance: RoHS-compliant variants available
Note: exact Rds(on), packaging, and electrical limits vary by variant and lot; refer to the specific datasheet for final figures.

Package

TO-220AB (through-hole) package.

Pinout

Pin count: 3 main pins (plus a metal tab/heatsink).
Pin functions (TO-220 style):
- Pin 1: Gate (G)
- Pin 2: Drain (D) — tab is electrically connected to Drain
- Pin 3: Source (S)
Device function: N‑channel enhancement‑mode power MOSFET for switching and power‑control applications (low‑side/high‑side switching, DC‑DC converters, motor drivers, etc.).

Manufacturer

Manufacturer: Fairchild Semiconductor (product often listed as FQB55N10TM). Fairchild is a semiconductor company (now part of onsemi/ON Semiconductor) that designs and manufactures discrete semiconductors and power devices — notably power MOSFETs, analog ICs and power-management components for industrial, automotive and consumer applications.

Application

Typical applications: switching regulators and DC-DC converters; motor drives (DC/BLDC); automotive power electronics (load switches, pre-regulators); power inverters and solar/renewable systems; uninterruptible power supplies (UPS); Class-D audio amplifiers; and other high-efficiency switching in consumer/industrial electronics.

Equivalent

I can list equivalents, but first: do you need a direct drop‑in (same package/pinout) or just electrically similar MOSFETs? Also confirm which specs to match: Vds (drain‑source voltage), Id (current), Rds(on), package, and switching/thermal needs. Provide that and I’ll return a concise cross‑reference.