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FQB44N10TM
MOSFET N-CH 100V 43.5A D2PAK
- メーカー
- Mfr。パート #FQB44N10TM
- パッケージ
- データシート FQB44N10TM DataSheet
- 在庫中22602
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仕様
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 43.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 39mOhm @ 21.75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 62 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1800 pF @ 25 V |
| PowerDissipation(Max) | 3.75W (Ta), 146W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
概要
Description
The FQB44N10TM is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 44A, making it suitable for various power management tasks, including switching power supplies, motor drives, and other high-current applications.
Key specifications include a low on-resistance (R_DS(on)), which enhances efficiency by minimizing conduction losses. The FQB44N10TM has a fast switching speed, allowing it to operate at high frequencies, which is essential in modern electronic circuits. It typically comes in a TO-220 package, facilitating easy heat dissipation with suitable heatsinking.
Overall, the FQB44N10TM is a reliable choice for engineers looking for a robust MOSFET to handle demanding power applications while maintaining efficiency and performance.
Key specifications include a low on-resistance (R_DS(on)), which enhances efficiency by minimizing conduction losses. The FQB44N10TM has a fast switching speed, allowing it to operate at high frequencies, which is essential in modern electronic circuits. It typically comes in a TO-220 package, facilitating easy heat dissipation with suitable heatsinking.
Overall, the FQB44N10TM is a reliable choice for engineers looking for a robust MOSFET to handle demanding power applications while maintaining efficiency and performance.
Features
The FQB44N10TM is an N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: Capable of handling a continuous drain current (I_D) of 44A at a specified temperature.
3. R_DS(on): Low on-resistance (typically around 0.04 ohms), enhancing efficiency by reducing power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): Generally ranges from 2V to 4V, allowing for easy drive with standard logic-level signals.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching Speed: Suitable for high-frequency applications due to low gate charge and fast switching characteristics.
7. Thermal Management: With a high maximum junction temperature (T_j), it supports robust thermal performance.
These features make the FQB44N10TM ideal for applications in power supplies, motor drives, and other high-efficiency circuits.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: Capable of handling a continuous drain current (I_D) of 44A at a specified temperature.
3. R_DS(on): Low on-resistance (typically around 0.04 ohms), enhancing efficiency by reducing power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): Generally ranges from 2V to 4V, allowing for easy drive with standard logic-level signals.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching Speed: Suitable for high-frequency applications due to low gate charge and fast switching characteristics.
7. Thermal Management: With a high maximum junction temperature (T_j), it supports robust thermal performance.
These features make the FQB44N10TM ideal for applications in power supplies, motor drives, and other high-efficiency circuits.
Package
The FQB44N10TM is packaged in a TO-220 format, which is a common package type for power MOSFETs, providing good thermal performance and easy heat dissipation.
Pinout
The FQB44N10TM is a N-channel MOSFET transistor with a total of 44 pins. It is designed for high-speed switching applications and has a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 44A.
The key functions of the pins include:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): Connected to ground or the negative side of the power supply.
The MOSFET is typically used in power supply circuits, motor control, and other applications where efficient switching is required. Its structure allows for low on-resistance, improving overall performance and thermal management. The FQB44N10TM is known for its fast switching capabilities and high efficiency, making it suitable for various electronic applications.
The key functions of the pins include:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): Connected to ground or the negative side of the power supply.
The MOSFET is typically used in power supply circuits, motor control, and other applications where efficient switching is required. Its structure allows for low on-resistance, improving overall performance and thermal management. The FQB44N10TM is known for its fast switching capabilities and high efficiency, making it suitable for various electronic applications.
Manufacturer
The FQB44N10TM is manufactured by Fairchild Semiconductor, which is a well-known company specializing in the design and production of semiconductor solutions. Fairchild focuses on providing a wide range of products, including power management, analog, and discrete semiconductors, catering to various sectors such as automotive, industrial, and consumer electronics. In 2016, Fairchild was acquired by ON Semiconductor, a larger semiconductor manufacturer that further expanded its portfolio and capabilities in the electronics market. Fairchild's expertise and innovations have made it a significant player in the semiconductor industry.
Application
The FQB44N10TM is an N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor drivers, and switching regulators. It is suitable for high-efficiency power conversion and is commonly utilized in consumer electronics, automotive systems, and industrial automation for its fast switching capabilities and high current handling.
Equivalent
The FQB44N10TM is a N-channel MOSFET, and its equivalent products include the IRF3205, STP44NF10, and FQD44N10. Always check datasheets for specific parameters to ensure compatibility in your application.
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