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FQA140N10
MOSFET N-CH 100V 140A TO3PN
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- Mfr。パート #FQA140N10
- パッケージ
- データシート FQA140N10 DataSheet
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仕様
| Supplier | Rochester Electronics, LLC,onsemi |
| Package | Bulk,Tube |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 140A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 10mOhm @ 70A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 285 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 7900 pF @ 25 V |
| PowerDissipation(Max) | 375W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-3PN |
概要
Description
FQA140N10 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. With a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) rating of 140A, it is suitable for various applications, including switching power supplies, motor drives, and other high-frequency circuits.
Key features include low on-resistance (Rds(on)), which minimizes power loss and heat generation during operation, ensuring efficiency. The device typically possesses fast switching characteristics, making it ideal for high-speed applications.
The FQA140N10 is usually packaged in a TO-220 or similar format, facilitating easy heat dissipation through heatsinking. Overall, it is favored in industrial and automotive applications where robust performance and reliability are essential.
For specific parameters and thermal characteristics, refer to the manufacturer's datasheet.
Key features include low on-resistance (Rds(on)), which minimizes power loss and heat generation during operation, ensuring efficiency. The device typically possesses fast switching characteristics, making it ideal for high-speed applications.
The FQA140N10 is usually packaged in a TO-220 or similar format, facilitating easy heat dissipation through heatsinking. Overall, it is favored in industrial and automotive applications where robust performance and reliability are essential.
For specific parameters and thermal characteristics, refer to the manufacturer's datasheet.
Features
The FQA140N10 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Drain-Source Voltage (Vds): Rated at 100V, allowing it to operate in various high-voltage environments.
2. Continuous Drain Current (Id): Capable of handling up to 140A, making it suitable for high-current applications.
3. Rds(on): Low on-resistance of approximately 0.03 ohms, resulting in enhanced efficiency and reduced power loss during operation.
4. Gate Threshold Voltage (Vgs(th)): Typically ranges from 2V to 4V, providing ease of drive with standard logic levels.
5. Package Type: Available in TO-220 and DPAK packages, facilitating various mounting options and thermal management.
6. Fast Switching Speed: Suitable for applications requiring quick switching, such as power supplies and motor drives.
7. Thermal Resistance: Good thermal characteristics, allowing for reliable performance under high-temperature conditions.
These features make the FQA140N10 suitable for applications like power management, DC-DC converters, and inverter circuits.
1. Drain-Source Voltage (Vds): Rated at 100V, allowing it to operate in various high-voltage environments.
2. Continuous Drain Current (Id): Capable of handling up to 140A, making it suitable for high-current applications.
3. Rds(on): Low on-resistance of approximately 0.03 ohms, resulting in enhanced efficiency and reduced power loss during operation.
4. Gate Threshold Voltage (Vgs(th)): Typically ranges from 2V to 4V, providing ease of drive with standard logic levels.
5. Package Type: Available in TO-220 and DPAK packages, facilitating various mounting options and thermal management.
6. Fast Switching Speed: Suitable for applications requiring quick switching, such as power supplies and motor drives.
7. Thermal Resistance: Good thermal characteristics, allowing for reliable performance under high-temperature conditions.
These features make the FQA140N10 suitable for applications like power management, DC-DC converters, and inverter circuits.
Package
The FQA140N10 is typically packaged in a TO-220 or TO-247 package type, which allows for efficient heat dissipation and is suitable for high-power applications.
Pinout
The FQA140N10 is an N-channel MOSFET with a total of 4 pins. The pin configuration is as follows:
1. Gate (G): The control terminal that receives the input signal to turn the MOSFET on and off.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it is in the on state.
3. Source (S): The terminal through which the current enters the MOSFET when it is conducting.
4. Body (B): Typically connected to the source internally, it is used for parasitic diode conduction.
This MOSFET is designed for applications such as power switching and is rated for a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 140A. Its low on-resistance makes it suitable for efficient power management applications.
1. Gate (G): The control terminal that receives the input signal to turn the MOSFET on and off.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it is in the on state.
3. Source (S): The terminal through which the current enters the MOSFET when it is conducting.
4. Body (B): Typically connected to the source internally, it is used for parasitic diode conduction.
This MOSFET is designed for applications such as power switching and is rated for a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 140A. Its low on-resistance makes it suitable for efficient power management applications.
Manufacturer
The FQA140N10 is manufactured by Fairchild Semiconductor, which is a company known for its production of semiconductor solutions. Fairchild Semiconductor specializes in the design and manufacturing of a wide range of electronic components, including power transistors, diodes, and integrated circuits, primarily for the automotive, industrial, consumer, and computing markets. The company is recognized for its innovative technologies and is a key player in the semiconductor industry, focusing on enhancing energy efficiency and performance in electronic applications.
Application
The FQA140N10 is a high-power N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, motor drives, and switching power supplies. It is also suitable for use in solar inverters, UPS systems, and audio amplifiers, where efficient switching and thermal performance are critical.
Equivalent
The FQA140N10 is an N-channel MOSFET with a 100V rating and a 140A current capacity. Equivalent products include the IRF140, STP140N10, and MTP140N10. Check specifications for specific features like RDS(on), gate threshold voltage, and packaging to ensure compatibility.
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