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FM25V02A-DGQ

Name: FM25V02A-DGQ
Rating: 4.7 (12 reviews)

IC FRAM 256KBIT SPI 40MHZ 8DFN

メーカー
Mfr。パート #FM25V02A-DGQ
パッケージ PG-WSON-8
データシート FM25V02A-DGQ DataSheet
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仕様

Package	Tube
Series	F-RAM™
ProductStatus	Active
MemoryType	Non-Volatile
MemoryFormat	FRAM
Technology	FRAM (Ferroelectric RAM)
MemorySize	256Kb (32K x 8)
MemoryInterface	SPI
ClockFrequency	40 MHz
Voltage-Supply	2V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	8-WDFN Exposed Pad

概要

Description

The FM25V02A-DGQ is a non-volatile memory device that belongs to the family of ferroelectric random-access memory (FeRAM). It offers 2 megabits (256KB) of storage capacity and features a serial peripheral interface (SPI) for reliable data communication. This device stands out for its fast write speeds, low power consumption, and endurance, making it suitable for applications requiring frequent write cycles, such as in automotive, industrial, and consumer electronics.
Key features include a wide operating voltage range, high-speed access times, and the ability to retain data without the need for battery backup. The FM25V02A-DGQ is also known for its robust data retention capabilities, typically exceeding 10 years, and can endure millions of write-erase cycles, far surpassing traditional flash memory.
Overall, this memory solution offers a blend of speed, reliability, and power efficiency ideal for diverse applications needing efficient data storage and retrieval.

Features

The FM25V02A-DGQ is a 2 Mbit (256 K x 8) serial EEPROM (Electrically Erasable Programmable Read-Only Memory) with the following key features:
1. Interface: SPI (Serial Peripheral Interface) for fast data transfer.
2. Voltage Range: Operates typically from 2.5V to 5.5V, making it suitable for various applications.
3. Speed: Supports clock speeds up to 20 MHz for quick read/write operations.
4. Endurance: Offers a high write endurance of up to 1 million cycles per memory cell.
5. Data Retention: Ensures data retention for over 100 years at 55°C.
6. Organization: Memory is organized in pages of 16 bytes, allowing for efficient data management.
7. Write Protection: Features a hardware write protect pin for enhanced data security.
8. Low Power Consumption: Ideal for battery-operated devices due to its low energy requirements during operation and standby modes.
These features make the FM25V02A-DGQ suitable for a variety of applications, including consumer electronics, automotive, and industrial systems.

Package

The FM25V02A-DGQ is packaged in an 8-pin DIP (Dual In-line Package) configuration.

Pinout

The FM25V02A-DGQ is a 2-Mbit (256K x 8) serial EEPROM device that operates via the Serial Peripheral Interface (SPI). It features a total of 8 pins. The pin functions are as follows:
1. VCC: Power supply pin (typically 2.7V to 3.6V).
2. GND: Ground pin.
3. SCK: Serial Clock input pin for synchronizing data transmission.
4. MOSI: Master Out Slave In pin for data input to the device.
5. MISO: Master In Slave Out pin for data output from the device.
6. CS: Chip Select pin to activate the device.
7. HOLD: Hold pin to pause the operation without resetting the device.
8. WP: Write Protect pin to prevent write operations.
The FM25V02A-DGQ is designed for applications requiring non-volatile memory with high endurance and fast access times.

Manufacturer

The FM25V02A-DGQ is manufactured by Fujitsu Semiconductor. This company specializes in producing a wide range of semiconductor products, including memory devices, microcontrollers, and other integrated circuits. Fujitsu Semiconductor is a division of Fujitsu Limited, a major Japanese information technology equipment and services company. The FM25V02A-DGQ is a serial EEPROM (Electrically Erasable Programmable Read-Only Memory) device, often used in applications requiring non-volatile memory storage for data retention. Fujitsu Semiconductor focuses on innovation and high-performance technology solutions for various industries, including automotive, consumer electronics, and industrial applications.

Application

The FM25V02A-DGQ is a 2-Mbit (256 K x 8) non-volatile ferroelectric RAM (FeRAM) that is used in various application areas, including industrial control systems, automotive electronics, medical devices, smart meters, and consumer electronics. Its fast read and write speeds, along with low power consumption and high endurance, make it suitable for data logging, configuration storage, and real-time applications requiring frequent data updates.

Equivalent

The FM25V02A-DGQ is a 2Mb (256KB) serial FRAM chip. Equivalent products include the Cypress FM25V02 and FM25V02B, as well as the Adesto Technologies AT25SF041, and the Micron MT25QL256ABA. Always check specifications for voltage, speed, and pin compatibility when considering substitutes.