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FM25V01-G
IC FRAM 128KBIT SPI 40MHZ 8SOIC
- メーカー
- Mfr。パート #FM25V01-G
- パッケージ 8-SOIC
- データシート FM25V01-G DataSheet
- 在庫中4206
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仕様
| Package | Tube,Tube |
| Series | F-RAM™ |
| ProductStatus | Obsolete |
| MemoryType | Non-Volatile |
| MemoryFormat | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| MemorySize | 128Kb (16K x 8) |
| MemoryInterface | SPI |
| ClockFrequency | 40 MHz |
| Voltage-Supply | 2V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概要
Description
The FM25V01-G is a serial EEPROM (Electrically Erasable Programmable Read-Only Memory) chip designed for non-volatile data storage. It utilizes the I²C communication protocol, allowing for easy integration with various microcontrollers and systems. With a memory capacity of 1 megabit (128 kilobytes), it is suitable for applications that require reliable data retention without power supply.
Key features of the FM25V01-G include fast read and write operations, low power consumption, and endurance of up to 1 million write/erase cycles. The device operates over a wide voltage range, typically from 2.7V to 5.5V, making it versatile for different applications.
It is ideal for use in consumer electronics, automotive systems, and industrial applications where data needs to be stored even when the device is powered off. The FM25V01-G also includes features like write protection, ensuring data integrity and security. Overall, it serves as a robust solution for embedded systems requiring efficient and reliable non-volatile memory.
Key features of the FM25V01-G include fast read and write operations, low power consumption, and endurance of up to 1 million write/erase cycles. The device operates over a wide voltage range, typically from 2.7V to 5.5V, making it versatile for different applications.
It is ideal for use in consumer electronics, automotive systems, and industrial applications where data needs to be stored even when the device is powered off. The FM25V01-G also includes features like write protection, ensuring data integrity and security. Overall, it serves as a robust solution for embedded systems requiring efficient and reliable non-volatile memory.
Features
The FM25V01-G is a 1 Mbit (128 K x 8) non-volatile Ferroelectric Random Access Memory (FRAM) device. Key features include:
1. Non-Volatility: Retains data without power, with a virtually unlimited write cycle endurance.
2. Fast Access Time: Provides fast read and write cycles, typically in the range of 70 ns.
3. Low Power Consumption: Operates with low power requirements, making it suitable for battery-operated applications.
4. SPI Interface: Supports a Serial Peripheral Interface (SPI) for high-speed communication with microcontrollers.
5. Wide Voltage Range: Operates from 2.7V to 3.6V, accommodating a variety of power supply designs.
6. High Data Integrity: Ensures data integrity with error-correcting code (ECC) features.
7. Temperature Range: Designed to operate in a wide temperature range, suitable for industrial applications.
8. High Reliability: Resistant to radiation and wear, providing long-term reliability in critical applications.
Overall, the FM25V01-G is ideal for applications requiring fast, efficient, and durable data storage solutions.
1. Non-Volatility: Retains data without power, with a virtually unlimited write cycle endurance.
2. Fast Access Time: Provides fast read and write cycles, typically in the range of 70 ns.
3. Low Power Consumption: Operates with low power requirements, making it suitable for battery-operated applications.
4. SPI Interface: Supports a Serial Peripheral Interface (SPI) for high-speed communication with microcontrollers.
5. Wide Voltage Range: Operates from 2.7V to 3.6V, accommodating a variety of power supply designs.
6. High Data Integrity: Ensures data integrity with error-correcting code (ECC) features.
7. Temperature Range: Designed to operate in a wide temperature range, suitable for industrial applications.
8. High Reliability: Resistant to radiation and wear, providing long-term reliability in critical applications.
Overall, the FM25V01-G is ideal for applications requiring fast, efficient, and durable data storage solutions.
Package
The FM25V01-G is offered in an 8-pin SOIC package type.
Pinout
The FM25V01-G is a 1 Mb (128 K x 8) serial non-volatile memory device that uses a 25xxx-style interface. It features a total of 8 pins:
1. VCC - Power supply.
2. GND - Ground.
3. SCK - Serial clock input for timing control.
4. SI - Serial input for data to be written to the memory.
5. SO - Serial output for data read from the memory.
6. CS - Chip select input, activates the device for communication.
7. WP - Write protect input, prevents write operations when high.
8. HOLD - Hold input, pauses communication when asserted low.
This device utilizes a simple SPI protocol for data transfer, allowing fast read and write operations while maintaining non-volatility through its ferroelectric technology.
1. VCC - Power supply.
2. GND - Ground.
3. SCK - Serial clock input for timing control.
4. SI - Serial input for data to be written to the memory.
5. SO - Serial output for data read from the memory.
6. CS - Chip select input, activates the device for communication.
7. WP - Write protect input, prevents write operations when high.
8. HOLD - Hold input, pauses communication when asserted low.
This device utilizes a simple SPI protocol for data transfer, allowing fast read and write operations while maintaining non-volatility through its ferroelectric technology.
Manufacturer
The FM25V01-G is manufactured by Fudan Microelectronics Group, a company based in China. Fudan Microelectronics specializes in the design and production of integrated circuits and semiconductor products, particularly focusing on non-volatile memory solutions such as EEPROM and Flash memory. Established in 2000, the company has developed a reputation for providing innovative memory solutions for various applications, including consumer electronics, automotive, and industrial sectors. Fudan Microelectronics emphasizes research and development, aiming to advance memory technology and enhance performance in its products.
Application
The FM25V01-G is a serial EEPROM memory chip commonly used in applications such as industrial automation, automotive systems, consumer electronics, and IoT devices. Its non-volatile memory is ideal for storing configuration settings, calibration data, and firmware updates, ensuring data retention even during power loss. Additionally, it is suitable for applications requiring frequent write cycles and low power consumption.
Equivalent
The FM25V01-G chip is a 1-Mbit (128KB) ferroelectric RAM (FRAM) device. Equivalent products include the Cypress (Infineon) FM25V01, STMicroelectronics M45PE10, and Microchip's MCP3XXX series. Always verify compatibility in terms of voltage, interface, and performance specifications before substituting.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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