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FM25L04B-G

Name: FM25L04B-G
Rating: 4.7 (12 reviews)

IC FRAM 4KBIT SPI 20MHZ 8SOIC

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Mfr。パート #FM25L04B-G
パッケージ 8-SOIC
データシート FM25L04B-G DataSheet
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仕様

Package	Bulk,Tube
Series	F-RAM™
ProductStatus	Active
MemoryType	Non-Volatile
MemoryFormat	FRAM
Technology	FRAM (Ferroelectric RAM)
MemorySize	4Kb (512 x 8)
MemoryInterface	SPI
ClockFrequency	20 MHz
Voltage-Supply	2.7V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	8-SOIC (0.154, 3.90mm Width)

概要

Description

The FM25L04B-G is a 4-Mbit (512 K x 8) non-volatile memory device from the Ferroelectric RAM (FRAM) family, manufactured by Fujitsu. It utilizes ferroelectric materials to achieve fast write speeds and high endurance compared to traditional EEPROM or Flash memory technologies. The FM25L04B-G features a simple SPI (Serial Peripheral Interface) protocol for communication, making it compatible with various microcontrollers and digital systems.
Key attributes include low power consumption, a wide operating temperature range, and the ability to perform unlimited write and erase cycles, which enhances its longevity and reliability for applications requiring frequent updates. The device is suitable for data logging, system configuration storage, and other applications in automotive, industrial, and consumer electronics. Its compact package and robust performance make it an attractive choice for engineers seeking an efficient, fast, and reliable non-volatile memory solution.

Features

The FM25L04B-G is a 4-Mbit (512 K x 8) serial EEPROM that utilizes Ferroelectric technology for non-volatile memory solutions. Key features include:
1. Interface: Supports SPI (Serial Peripheral Interface) for high-speed data transfer.
2. Operating Voltage: Typically operates within a voltage range of 2.7V to 3.6V.
3. Access Speed: Offers fast access times, with read speeds up to 50 MHz.
4. Endurance: Designed for over 1 million write cycles and a data retention period of up to 100 years.
5. Write Protection: Features hardware and software write protection to enhance data integrity.
6. Low Power Consumption: Consumes low power during read/write operations and has a deep power-down mode.
7. Array Organization: Organized as 512 pages of 8 bytes each, simplifying data management.
This combination of features makes the FM25L04B-G suitable for a wide range of applications, including consumer electronics, automotive, and industrial applications where reliable and fast non-volatile memory is required.

Package

The FM25L04B-G is available in a 8-pin SOIC (Small Outline Integrated Circuit) package type.

Pinout

The FM25L04B-G is a serial EEPROM with a total of 8 pins. Here’s a brief overview of the pin functions:
1. VCC (Pin 1): Power supply pin.
2. GND (Pin 2): Ground reference.
3. SCK (Pin 3): Serial Clock input for synchronizing data transmission.
4. SI (Pin 4): Serial Input for data coming into the device.
5. SO (Pin 5): Serial Output for data being sent out from the device.
6. CS (Pin 6): Chip Select input to enable the device for communication.
7. WP (Pin 7): Write Protect pin; when asserted, it prevents write operations.
8. HOLD (Pin 8): Hold pin; used to pause the communication without resetting the device.
The FM25L04B-G provides non-volatile storage and is typically used in applications requiring data retention without power.

Manufacturer

The FM25L04B-G is manufactured by Fujitsu, a company known for its extensive range of technology products. Fujitsu is a multinational information technology equipment and services company headquartered in Tokyo, Japan. Established in 1935, it operates in various sectors, including computing, telecommunications, and electronic components. The FM25L04B-G is a type of non-volatile memory, specifically a ferroelectric RAM (FeRAM), which is utilized in applications requiring low power, high endurance, and fast write cycles. Fujitsu is recognized for its innovations in semiconductor technology, contributing to the advancement of memory solutions in various industries.

Application

The FM25L04B-G is a 4Mb Ferroelectric RAM (FRAM) device used in various applications, including industrial automation, smart meters, automotive systems, medical devices, consumer electronics, and Internet of Things (IoT) devices. Its features include high endurance, low power consumption, and fast read/write speeds, making it suitable for data logging, configuration storage, and critical data retention in environments requiring reliability and speed.

Equivalent

The FM25L04B-G is a 4Mbit ferroelectric RAM (FeRAM) chip. Equivalent products include the Cypress/Fairchild CY15B102Q, STMicroelectronics M41T62, and the Texas Instruments FRAM series, such as the FM24V04. Always verify specific features like voltage, access speed, and pin configuration to ensure compatibility with your application.