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FM24VN10-G
IC FRAM 1MBIT I2C 3.4MHZ 8SOIC
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- Mfr。パート #FM24VN10-G
- パッケージ PG-DSO-8
- データシート FM24VN10-G DataSheet
- 在庫中7153
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仕様
| Package | Tube |
| Series | F-RAM™ |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| MemorySize | 1Mb (128K x 8) |
| MemoryInterface | I²C |
| ClockFrequency | 3.4 MHz |
| AccessTime | 130 ns |
| Voltage-Supply | 2V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概要
Description
The FM24VN10-G is a non-volatile ferroelectric RAM (FRAM) memory chip, notable for its combination of high-speed performance and low power consumption. It features a density of 1 megabit (128K x 8 bits) and operates via a simple serial interface, making it compatible with various microcontrollers and processors.
Key attributes include fast write speeds (typically in the nanosecond range), endurance of over 10 trillion write cycles, and the ability to retain data without the need for a battery, thanks to its ferroelectric technology. This makes it particularly suitable for applications requiring frequent data updates, such as industrial controls, medical devices, and consumer electronics.
The FM24VN10-G is also designed to withstand extreme environmental conditions, which enhances its reliability in demanding applications. Its low power consumption is advantageous for battery-powered devices, contributing to longer operational life. Overall, the FM24VN10-G is an ideal choice for systems that prioritize data integrity, speed, and energy efficiency.
Key attributes include fast write speeds (typically in the nanosecond range), endurance of over 10 trillion write cycles, and the ability to retain data without the need for a battery, thanks to its ferroelectric technology. This makes it particularly suitable for applications requiring frequent data updates, such as industrial controls, medical devices, and consumer electronics.
The FM24VN10-G is also designed to withstand extreme environmental conditions, which enhances its reliability in demanding applications. Its low power consumption is advantageous for battery-powered devices, contributing to longer operational life. Overall, the FM24VN10-G is an ideal choice for systems that prioritize data integrity, speed, and energy efficiency.
Features
The FM24VN10-G is a 1-Mbit (128K x 8) non-volatile memory device that utilizes Ferroelectric RAM (FeRAM) technology. Key features include:
1. Fast Write Speed: Provides high-speed writes typically within 10 nanoseconds.
2. Endurance: Offers an impressive write endurance of up to 10 trillion write cycles.
3. Data Retention: Maintains data for over 100 years without needing a battery.
4. Low Power Consumption: Operates with low active and standby currents, making it suitable for battery-operated devices.
5. Simple Interface: Uses a standard SPI interface for easy integration into various applications.
6. Wide Operating Voltage: Supports a voltage range of 2.7V to 3.6V.
7. Temperature Range: Operates reliably across a wide temperature range, typically from -40°C to +85°C.
8. Small Package: Available in compact packages, ideal for space-constrained designs.
These features make the FM24VN10-G suitable for applications requiring high-speed, reliable, and non-volatile memory storage, such as in consumer electronics, industrial devices, and automotive systems.
1. Fast Write Speed: Provides high-speed writes typically within 10 nanoseconds.
2. Endurance: Offers an impressive write endurance of up to 10 trillion write cycles.
3. Data Retention: Maintains data for over 100 years without needing a battery.
4. Low Power Consumption: Operates with low active and standby currents, making it suitable for battery-operated devices.
5. Simple Interface: Uses a standard SPI interface for easy integration into various applications.
6. Wide Operating Voltage: Supports a voltage range of 2.7V to 3.6V.
7. Temperature Range: Operates reliably across a wide temperature range, typically from -40°C to +85°C.
8. Small Package: Available in compact packages, ideal for space-constrained designs.
These features make the FM24VN10-G suitable for applications requiring high-speed, reliable, and non-volatile memory storage, such as in consumer electronics, industrial devices, and automotive systems.
Package
The FM24VN10-G is typically packaged in a 8-pin SOIC (Small Outline Integrated Circuit) format. This package type allows for easy integration onto PCBs while providing a compact footprint suitable for various electronic applications.
Pinout
The FM24VN10-G is a 1-Mbit (128K x 8) ferroelectric RAM (FeRAM) memory device. It features a 20-pin SOIC (Small Outline Integrated Circuit) package.
### Pin Count and Functions:
1. Pin Count: 20 pins
2. Functions:
- VDD: Power supply voltage
- GND: Ground
- SCL: Serial clock line for I2C communication
- SDA: Serial data line for I2C communication
- A0, A1: Address pins for device selection in a multi-device configuration
- WP: Write protect pin for protecting data
- HOLD: Hold pin to pause communication
- ACK: Acknowledge signal during data transfer
- NC: No connection pins
This device is designed for applications requiring non-volatile memory with fast write speeds and low power consumption.
### Pin Count and Functions:
1. Pin Count: 20 pins
2. Functions:
- VDD: Power supply voltage
- GND: Ground
- SCL: Serial clock line for I2C communication
- SDA: Serial data line for I2C communication
- A0, A1: Address pins for device selection in a multi-device configuration
- WP: Write protect pin for protecting data
- HOLD: Hold pin to pause communication
- ACK: Acknowledge signal during data transfer
- NC: No connection pins
This device is designed for applications requiring non-volatile memory with fast write speeds and low power consumption.
Manufacturer
The FM24VN10-G is manufactured by Fujitsu Semiconductor. Fujitsu Semiconductor is a subsidiary of Fujitsu Limited, a leading Japanese multinational company specializing in information technology services and products. The company focuses on semiconductor solutions, including memory, microcontrollers, and application-specific integrated circuits (ASICs). Fujitsu Semiconductor aims to deliver high-performance, high-quality products for various applications, including consumer electronics, automotive, and industrial sectors. They are well-regarded for their innovation and technological advancements in the semiconductor industry.
Application
The FM24VN10-G is a non-volatile memory chip commonly used in applications requiring reliable data storage and retrieval, such as in industrial automation, consumer electronics, automotive systems, and medical devices. Its features make it suitable for low-power applications, firmware storage, logging data, and storing configuration settings in IoT devices and smart appliances.
Equivalent
The FM24VN10-G chip, a non-volatile memory device from Fujitsu, is equivalent to several other chips, including the Microchip 24AA10 and the Atmel AT24C01. These alternatives provide similar I2C communication and EEPROM functionality. Always verify specific electrical characteristics and pin configurations before substituting components.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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