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FM24V10-G
IC FRAM 1MBIT I2C 3.4MHZ 8SOIC
- メーカー
- Mfr。パート #FM24V10-G
- パッケージ PG-DSO-8
- データシート FM24V10-G DataSheet
- 在庫中3638
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仕様
| Package | Bulk,Tube |
| Series | F-RAM™ |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| MemorySize | 1Mb (128K x 8) |
| MemoryInterface | I²C |
| ClockFrequency | 3.4 MHz |
| AccessTime | 130 ns |
| Voltage-Supply | 2V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概要
Description
The FM24V10-G is a non-volatile memory device from the FM series, designed for applications requiring data retention without power. It utilizes Ferroelectric Random Access Memory (FeRAM) technology, offering fast read and write speeds, low power consumption, and high endurance compared to traditional flash memory. With a capacity of 1 megabit (128KB), it is suitable for various applications, including automotive systems, industrial controls, and consumer electronics.
Key features include a wide operating voltage range, high write cycle endurance (up to 10 trillion write cycles), and the ability to retain data for more than 10 years without power. The FM24V10-G supports a standard SPI interface, ensuring easy integration into existing systems. Its robustness against radiation makes it a suitable choice for aerospace and medical applications. Overall, the FM24V10-G combines speed, reliability, and low power consumption, making it an ideal choice for modern electronics requiring efficient data storage solutions.
Key features include a wide operating voltage range, high write cycle endurance (up to 10 trillion write cycles), and the ability to retain data for more than 10 years without power. The FM24V10-G supports a standard SPI interface, ensuring easy integration into existing systems. Its robustness against radiation makes it a suitable choice for aerospace and medical applications. Overall, the FM24V10-G combines speed, reliability, and low power consumption, making it an ideal choice for modern electronics requiring efficient data storage solutions.
Features
The FM24V10-G is a non-volatile memory device from the FM series, specifically designed for applications requiring reliable data retention without power. Key features include:
1. Memory Type: Ferroelectric RAM (FeRAM) providing fast read and write capabilities.
2. Capacity: 1 Megabit (128K x 8 bits) of memory.
3. Speed: High-speed operation with read access times typically around 50 ns.
4. Endurance: Excellent write endurance of over 10 billion write cycles.
5. Data Retention: Retains data for at least 100 years at 85°C.
6. Operating Voltage: Typically operates at a voltage range of 2.0V to 3.6V.
7. Interface: Compatible with standard microcontroller interfaces, simplifying integration into existing systems.
8. Low Power Consumption: Consumes minimal power during operation and standby, making it suitable for battery-operated devices.
The FM24V10-G is ideal for applications in automotive, industrial, and consumer electronics where data integrity and longevity are critical.
1. Memory Type: Ferroelectric RAM (FeRAM) providing fast read and write capabilities.
2. Capacity: 1 Megabit (128K x 8 bits) of memory.
3. Speed: High-speed operation with read access times typically around 50 ns.
4. Endurance: Excellent write endurance of over 10 billion write cycles.
5. Data Retention: Retains data for at least 100 years at 85°C.
6. Operating Voltage: Typically operates at a voltage range of 2.0V to 3.6V.
7. Interface: Compatible with standard microcontroller interfaces, simplifying integration into existing systems.
8. Low Power Consumption: Consumes minimal power during operation and standby, making it suitable for battery-operated devices.
The FM24V10-G is ideal for applications in automotive, industrial, and consumer electronics where data integrity and longevity are critical.
Package
The FM24V10-G is available in a 8-pin SOIC (Small Outline Integrated Circuit) package. This compact package design is suitable for surface mounting on printed circuit boards, making it ideal for various electronic applications.
Pinout
The FM24V10-G is a 1-Mbit (128K x 8) Ferroelectric Random Access Memory (FRAM) device. It features a total of 8 pins. The pin configuration and their functions are as follows:
1. VDD - Power supply pin.
2. VSS - Ground pin.
3. SDA - Serial data input/output pin for data communication.
4. SCL - Serial clock pin; it provides the timing for data transfer.
5. HOLD - Hold pin; can be used to pause data transmission without losing the current state.
6. WP - Write protect pin; prevents writing to the memory when active.
7. A0 - Address input pin for selecting memory locations.
8. A1 - Additional address input pin for further addressing.
The device operates using an I2C interface for communication, making it suitable for applications requiring non-volatile memory with frequent write and read operations.
1. VDD - Power supply pin.
2. VSS - Ground pin.
3. SDA - Serial data input/output pin for data communication.
4. SCL - Serial clock pin; it provides the timing for data transfer.
5. HOLD - Hold pin; can be used to pause data transmission without losing the current state.
6. WP - Write protect pin; prevents writing to the memory when active.
7. A0 - Address input pin for selecting memory locations.
8. A1 - Additional address input pin for further addressing.
The device operates using an I2C interface for communication, making it suitable for applications requiring non-volatile memory with frequent write and read operations.
Manufacturer
The FM24V10-G is manufactured by Cypress Semiconductor, which is a subsidiary of Infineon Technologies AG. Cypress is known for developing a wide range of semiconductor solutions, including memory, microcontrollers, and interface components. The company specializes in non-volatile memory products, specifically FRAM (Ferroelectric Random Access Memory), which is utilized in various applications such as automotive, industrial, and consumer electronics. Cypress has a strong focus on innovation and performance in its semiconductor offerings, catering to a diverse set of industries.
Application
The FM24V10-G is a non-volatile memory device typically used in applications such as consumer electronics, automotive systems, industrial automation, and telecommunications. It serves as a data storage solution for configuration settings, firmware updates, and critical data retention in systems requiring reliable and fast access to stored information without power. Its EEPROM characteristics make it suitable for applications needing frequent write and erase cycles.
Equivalent
The FM24V10-G is a 1K-bit FRAM memory chip. Equivalent products include:
1. FM24V10 - Same chip without the '-G'.
2. MB85RS1MT - 1K-bit FRAM from Fujitsu.
3. M24M01 - 1K-bit EEPROM from STMicroelectronics.
4. AT25DF041A - 4K-bit SPI Flash from Atmel.
Check specific features and pin configurations for compatibility.
1. FM24V10 - Same chip without the '-G'.
2. MB85RS1MT - 1K-bit FRAM from Fujitsu.
3. M24M01 - 1K-bit EEPROM from STMicroelectronics.
4. AT25DF041A - 4K-bit SPI Flash from Atmel.
Check specific features and pin configurations for compatibility.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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