FGY75T120SWD

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FGY75T120SWD

IGBT FS 1200V 150A TO-247-3

100% オリジナル &新しい

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仕様

Part Status Active
IGBT Type Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 150 A
Current - Collector Pulsed (Icm) 300 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A
Power - Max 503 W
Switching Energy 5mJ (on), 2.32mJ (off)
Input Type Standard
Gate Charge 214 nC
Td (on/off) @ 25°C 42ns/171ns
Test Condition 600V, 75A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 307 ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Supplier Device Package TO-247-3

概要

Description

The FGY75T120SWD is a high-performance, insulated gate bipolar transistor (IGBT) module designed for medium to high power applications. It typically features a voltage rating of 1200V and a current rating of 75A, making it suitable for use in various industrial applications such as motor drives, inverters, and power conversion systems.
This module combines the efficiency of IGBTs with the convenience of a compact package, enabling effective thermal management and easy integration into circuits. The FGY75T120SWD is known for its fast switching capabilities, low power loss, and high reliability, essential for enhancing system performance and reducing operational costs.
Applications for this module include renewable energy systems like solar and wind power inverters, as well as industrial equipment requiring robust power handling. Overall, the FGY75T120SWD represents a reliable choice for engineers seeking effective solutions in power electronics.

Features

The FGY75T120SWD is a high-performance IGBT module designed for various industrial applications, including motor drives and renewable energy systems. Key features include:
1. Rated Current: It typically supports a continuous current rating of 75A, making it suitable for demanding tasks.
2. Voltage Rating: With a maximum collector-emitter voltage of 1200V, it ensures reliable operation in high-voltage environments.
3. Fast Switching: The module is designed for efficient switching, which reduces power losses and enhances overall system efficiency.
4. Thermal Performance: It features a low thermal resistance design, allowing for effective heat dissipation to maintain optimal performance.
5. Robust Packaging: The module is housed in a compact package that supports easy integration into various systems while ensuring mechanical stability.
6. Protection Features: It often includes built-in protection against overcurrent and overheating, enhancing reliability.
These features make the FGY75T120SWD suitable for applications requiring robust performance and efficiency.

Package

The FGY75T120SWD is typically packaged in a TO-247 or similar package type, designed for high-power applications. This package provides effective heat dissipation and mechanical robustness, making it suitable for power electronic devices.

Pinout

The FGY75T120SWD is an IGBT (Insulated Gate Bipolar Transistor) module typically used in power electronics applications. It features a pin count of 6. The primary functions of these pins are as follows:
1. Gate (G): This pin is used to control the IGBT, allowing it to turn on and off.
2. Collector (C): This pin connects to the high-voltage circuit and conducts the main current when the IGBT is on.
3. Emitter (E): This pin serves as the return path for the current and is connected to the ground or negative voltage side of the circuit.
4. Thermal (T): Some configurations may include thermal sensing or connections for temperature monitoring.
The specific pin assignments may vary by manufacturer, so it's essential to consult the datasheet for precise configurations and characteristics.

Manufacturer

The FGY75T120SWD is manufactured by Fuji Electric, a Japanese company known for its expertise in electrical and electronic equipment. Founded in 1923, Fuji Electric specializes in power semiconductors, power electronics, and industrial automation systems. The company serves various sectors, including energy, manufacturing, and transportation, focusing on innovative technologies that enhance efficiency and sustainability. Fuji Electric is recognized for its commitment to quality and technological advancement, making it a key player in the global market for electrical components and systems.

Application

The FGY75T120SWD is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used primarily in applications such as motor drives, renewable energy systems (like solar inverters), power supplies, and industrial automation. Its capability to handle high power and voltage makes it suitable for converting and controlling electrical energy in various power electronics applications.

Equivalent

The FGY75T120SWD is a power MOSFET commonly used in high-voltage applications. Equivalent products include the FGH75T120SW, STP75N120, and IRF75N120. Always verify specifications like voltage, current rating, and RDS(on) to ensure compatibility in your specific application.

出荷

出荷方法私たち

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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