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FGY75N60SMD
IGBT 600V 150A 750W POWER-247
- メーカー
- Mfr。パート #FGY75N60SMD
- パッケージ TO-247-3 Variant
- データシート FGY75N60SMD DataSheet
- 在庫中3164
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Supplier | Rochester Electronics, LLC,onsemi |
| Package | Bulk,Tube |
| ProductStatus | Obsolete |
| IGBTType | Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 150 A |
| Current-CollectorPulsed(Icm) | 225 A |
| Vce(on)(Max)@VgeIc | 2.5V @ 15V, 75A |
| Power-Max | 750 W |
| SwitchingEnergy | 2.3mJ (on), 770µJ (off) |
| InputType | Standard |
| GateCharge | 248 nC |
| Td(on/off)@25°C | 24ns/136ns |
| TestCondition | 400V, 75A, 3Ohm, 15V |
| ReverseRecoveryTime(trr) | 55 ns |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 Variant |
概要
Description
FGY75N60SMD is a high‑voltage N‑channel power MOSFET intended for switching power electronics. Key points:
- Voltage/current: VDS ~ 600 V; continuous current around 75 A (manufacturer dependent).
- On-resistance: RDS(on) typically in the 0.6–1.0 Ω range at VGS ≈ 10 V (varies by part).
- Package: SMD package (commonly D2PAK/TO‑263 style).
- Gate: Threshold roughly 2–4 V; driven with 10 V (standard) or per datasheet.
- Applications: Switch-mode power supplies, motor drives, inverters, solar inverters, and other high‑voltage switching tasks.
- Notes: Heat sinking and proper gate drive are important. For exact electrical characteristics, package details, and safe operating area, consult the specific manufacturer’s datasheet.
- Voltage/current: VDS ~ 600 V; continuous current around 75 A (manufacturer dependent).
- On-resistance: RDS(on) typically in the 0.6–1.0 Ω range at VGS ≈ 10 V (varies by part).
- Package: SMD package (commonly D2PAK/TO‑263 style).
- Gate: Threshold roughly 2–4 V; driven with 10 V (standard) or per datasheet.
- Applications: Switch-mode power supplies, motor drives, inverters, solar inverters, and other high‑voltage switching tasks.
- Notes: Heat sinking and proper gate drive are important. For exact electrical characteristics, package details, and safe operating area, consult the specific manufacturer’s datasheet.
Features
Here are the typical features of FGY75N60SMD (power MOSFET in an SMD package):
- Type: N-channel enhancement-mode power MOSFET
- Voltage rating: around 600 V (high-voltage offline switching)
- Current rating: roughly 75 A (continuous, depends on temp/packaging)
- On-resistance: in the low-Ω to mid-Ω range (varies with temperature)
- Switching: fast switching capable for switch-mode power supplies
- Body diode: intrinsic fast diode with avalanche ruggedness
- Packaging: surface-mount power package (SMD), suitable for PCB mounting and heatsinking
- Applications: offline SMPS, power supplies, motor drivers, high-voltage switching
Note: Exact electrical values (Vds, Id, Rds(on), etc.) vary by lot and condition. Please refer to the official datasheet for precise specifications and thermal characteristics.
- Type: N-channel enhancement-mode power MOSFET
- Voltage rating: around 600 V (high-voltage offline switching)
- Current rating: roughly 75 A (continuous, depends on temp/packaging)
- On-resistance: in the low-Ω to mid-Ω range (varies with temperature)
- Switching: fast switching capable for switch-mode power supplies
- Body diode: intrinsic fast diode with avalanche ruggedness
- Packaging: surface-mount power package (SMD), suitable for PCB mounting and heatsinking
- Applications: offline SMPS, power supplies, motor drivers, high-voltage switching
Note: Exact electrical values (Vds, Id, Rds(on), etc.) vary by lot and condition. Please refer to the official datasheet for precise specifications and thermal characteristics.
Package
D2PAK (TO-263) surface-mount package.
Pinout
FGY75N60SMD is a 600 V, 75 A N‑channel power MOSFET in an SMD power package. It has three electrical pins plus a large metal mounting/tab:
- Pin 1: Gate (G) — control terminal.
- Pin 2: Drain (D) — main high‑voltage terminal (also tied to the metal mounting/tab).
- Pin 3: Source (S) — return/low side terminal (substrate tied; body diode from D→S).
(Orientation: looking at the component front/marking side, pins are typically numbered left-to-right as G, D, S; the tab is D.)
- Pin 1: Gate (G) — control terminal.
- Pin 2: Drain (D) — main high‑voltage terminal (also tied to the metal mounting/tab).
- Pin 3: Source (S) — return/low side terminal (substrate tied; body diode from D→S).
(Orientation: looking at the component front/marking side, pins are typically numbered left-to-right as G, D, S; the tab is D.)
Application
FGY75N60SMD is a high-voltage, high-current N-channel MOSFET (≈600 V, ≈75 A) in an SMD package. Common applications:
- switch-mode power supplies (SMPS) and PFC stages
- DC-DC converters and AC-DC inverters
- motor/servo drives
- solar/wind inverters and UPS systems
- welding/induction heating power electronics
- industrial power stages and high-power switching networks
- switch-mode power supplies (SMPS) and PFC stages
- DC-DC converters and AC-DC inverters
- motor/servo drives
- solar/wind inverters and UPS systems
- welding/induction heating power electronics
- industrial power stages and high-power switching networks
Equivalent
Do you mean FGH75N60SMD (Infineon IGBT 75A/600V)? Please confirm the exact part number so I can list accurate equivalents.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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