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FGH30S130P

Name: FGH30S130P
Rating: 4.7 (12 reviews)

IGBT 1300V 60A 500W TO-247AB

メーカー
Mfr。パート #FGH30S130P
パッケージ TO-3PN
データシート
在庫中5148

+BOM RFQについて

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

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仕様

Package	Tube
ProductStatus	Active
IGBTType	Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max)	1300 V
Current-Collector(Ic)(Max)	60 A
Current-CollectorPulsed(Icm)	90 A
Vce(on)(Max)@VgeIc	2.3V @ 15V, 30A
Power-Max	500 W
InputType	Standard
GateCharge	78 nC
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
Package/Case	TO-247-3

概要

Description

FGH30S130P is a high-performance power transistor, specifically designed for various electronic applications, including power amplification and switching. It typically features a high voltage rating and a robust current handling capability, making it suitable for use in power supplies, industrial equipment, and automotive applications.
This transistor is part of the FGH series, which is known for its efficiency and reliability under demanding conditions. It usually comes in a TO-247 package, allowing for effective heat dissipation. The FGH30S130P's specifications often include a maximum collector-emitter voltage (V_CE) of around 130V and a maximum collector current (I_C) of 30A, contributing to its versatility in power management.
Overall, the FGH30S130P is a key component in modern electronics, providing efficient power control in various sectors. Always consult the manufacturer's datasheet for detailed electrical specifications and thermal management guidelines for optimal performance.

Features

The FGH30S130P is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It can handle up to 130V, making it suitable for high-voltage circuits.
2. Current Rating: The device supports continuous drain current up to 30A, allowing for robust power handling.
3. RDS(on): Low on-resistance (typically around 0.09Ω), which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage: The threshold voltage ranges from 2V to 4V, ensuring compatibility with low-voltage gate drive circuits.
5. Package Type: Available in a TO-220 package, facilitating effective heat dissipation and easy mounting.
6. Fast Switching: Designed for fast switching applications, making it ideal for switching power supplies and motor drivers.
7. Thermal Resistance: Good thermal performance with a low thermal resistance, allowing for better heat management.
These attributes make the FGH30S130P suitable for applications in automotive, industrial, and consumer electronics.

Package

The FGH30S130P is typically packaged in a TO-247 format. This package type is known for its robust thermal performance and ease of handling in power electronic applications.

Pinout

The FGH30S130P is a high-voltage N-channel MOSFET designed for power switching applications. It typically features a pin count of 5.
The function of each pin is as follows:
1. Gate (G): This pin controls the MOSFET, allowing it to switch on and off by applying a voltage.
2. Drain (D): The output pin where the load is connected. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the power supply. It serves as the return path for current flowing through the MOSFET.
4. Body Diode: An intrinsic diode between drain and source that allows current to flow in the reverse direction, useful for applications such as inductive load switching.
The FGH30S130P is suitable for applications requiring high efficiency and reliability in power conversion and control.

Manufacturer

The FGH30S130P is a high-power N-channel MOSFET manufactured by Fairchild Semiconductor, which is a subsidiary of ON Semiconductor. Fairchild Semiconductor is known for designing and producing a wide range of semiconductor products, including power management, analog, and digital solutions. The company specializes in technologies that enable efficient power conversion and management, making it a key player in sectors such as automotive, industrial, and consumer electronics. The FGH30S130P specifically is used in applications requiring high efficiency and fast switching speeds, such as power supplies and motor drivers.

Application

FGH30S130P is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) used in various applications including power inverters, motor drives, renewable energy systems (like solar inverters), induction heating, and industrial automation. Its characteristics make it suitable for efficient switching in high-power electronic devices, enabling energy savings and improved performance in both consumer and industrial applications.

Equivalent

The FGH30S130P is a high-voltage N-channel MOSFET. Equivalent products include the IRF320, FQP30N130, STP30NF130, and the NTP30N130. Ensure to check specific parameters like V_ds, I_d, and R_ds(on) for compatibility in your application.