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FGA20N120FTDTU
IGBT 1200V 40A 298W TO3PN
- メーカー
- Mfr。パート #FGA20N120FTDTU
- パッケージ TO-3P-3,SC-65-3
- データシート FGA20N120FTDTU DataSheet
- 在庫中5982
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仕様
| Package | Tube |
| ProductStatus | Obsolete |
| IGBTType | Trench Field Stop |
| Voltage-CollectorEmitterBreakdown(Max) | 1200 V |
| Current-Collector(Ic)(Max) | 40 A |
| Current-CollectorPulsed(Icm) | 60 A |
| Vce(on)(Max)@VgeIc | 2V @ 15V, 20A |
| Power-Max | 298 W |
| InputType | Standard |
| GateCharge | 137 nC |
| ReverseRecoveryTime(trr) | 447 ns |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-3P-3, SC-65-3 |
概要
Description
The FGA20N120FTDTU is a high-performance N-channel MOSFET designed for power applications. It is rated for a maximum drain-source voltage (V_DS) of 1200V and a continuous drain current (I_D) of 20A, making it suitable for high-voltage switching applications. This device features low on-resistance (R_DS(on)), which enhances efficiency and reduces power loss during operation.
The FGA20N120FTDTU is often used in power supplies, motor drives, and renewable energy systems, such as solar inverters. Its fast switching capabilities enable efficient operation in pulse width modulation (PWM) applications. The device is housed in a TO-220 package, allowing for effective heat dissipation and easy mounting.
Key specifications include a gate threshold voltage (V_GS(th)) typically between 2V and 4V, and a maximum gate-source voltage (V_GS) rating of ±20V. Overall, the FGA20N120FTDTU is a reliable choice for engineers looking to design efficient, high-voltage power electronic circuits.
The FGA20N120FTDTU is often used in power supplies, motor drives, and renewable energy systems, such as solar inverters. Its fast switching capabilities enable efficient operation in pulse width modulation (PWM) applications. The device is housed in a TO-220 package, allowing for effective heat dissipation and easy mounting.
Key specifications include a gate threshold voltage (V_GS(th)) typically between 2V and 4V, and a maximum gate-source voltage (V_GS) rating of ±20V. Overall, the FGA20N120FTDTU is a reliable choice for engineers looking to design efficient, high-voltage power electronic circuits.
Features
The FGA20N120FTDTU is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: With a maximum drain-source voltage (V_DS) of 1200V, it is suitable for high-voltage environments.
2. Current Rating: It can handle continuous drain current (I_D) of up to 20A, making it effective for various power applications.
3. Low On-Resistance: The device exhibits a low R_DS(on), which enhances efficiency and reduces power loss during operation.
4. Fast Switching Speed: Designed for fast switching, it improves performance in applications such as converters and inverters.
5. Robust Package: Typically housed in a TO-220 or similar package, providing good thermal performance and ease of mounting.
6. Thermal Management: It has a high thermal conductivity, aiding in better heat dissipation.
7. Applications: Ideal for use in power supplies, motor drives, and industrial equipment.
These features make the FGA20N120FTDTU a reliable choice for both consumer and industrial applications requiring high efficiency and performance.
1. Voltage Rating: With a maximum drain-source voltage (V_DS) of 1200V, it is suitable for high-voltage environments.
2. Current Rating: It can handle continuous drain current (I_D) of up to 20A, making it effective for various power applications.
3. Low On-Resistance: The device exhibits a low R_DS(on), which enhances efficiency and reduces power loss during operation.
4. Fast Switching Speed: Designed for fast switching, it improves performance in applications such as converters and inverters.
5. Robust Package: Typically housed in a TO-220 or similar package, providing good thermal performance and ease of mounting.
6. Thermal Management: It has a high thermal conductivity, aiding in better heat dissipation.
7. Applications: Ideal for use in power supplies, motor drives, and industrial equipment.
These features make the FGA20N120FTDTU a reliable choice for both consumer and industrial applications requiring high efficiency and performance.
Package
The FGA20N120FTDTU is a power transistor packaged in a TO-247 style. This package type is designed for high-power applications, providing efficient heat dissipation and ease of mounting on heatsinks.
Pinout
The FGA20N120FTDTU is a power transistor, specifically an N-channel MOSFET. It typically features a TO-247 package, which has three pins. The pin configuration is as follows:
1. Gate (G): This pin controls the operation of the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the current flows out of the MOSFET when it is in the on-state.
3. Source (S): This terminal is connected to the negative side or ground of the circuit, allowing current to flow into the MOSFET.
The FGA20N120FTDTU is designed for high-voltage applications, typically rated for 1200V and 20A, making it suitable for power conversion and switching applications.
1. Gate (G): This pin controls the operation of the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the current flows out of the MOSFET when it is in the on-state.
3. Source (S): This terminal is connected to the negative side or ground of the circuit, allowing current to flow into the MOSFET.
The FGA20N120FTDTU is designed for high-voltage applications, typically rated for 1200V and 20A, making it suitable for power conversion and switching applications.
Manufacturer
The FGA20N120FTDTU is manufactured by ON Semiconductor, a global semiconductor supplier. ON Semiconductor specializes in providing a wide range of semiconductor solutions, including power and signal management, logic, and discrete semiconductors. The company serves various industries, including automotive, communications, computing, consumer electronics, and industrial applications. ON Semiconductor focuses on energy-efficient technologies and innovation, catering to the growing demand for sustainable electronic solutions.
Application
The FGA20N120FTDTU is a 1200V, 20A IGBT (Insulated Gate Bipolar Transistor) commonly used in industrial applications such as motor drives, power inverters, and renewable energy systems like solar inverters. It is suitable for high-frequency switching applications and is often utilized in power converters, uninterruptible power supplies (UPS), and induction heating systems due to its efficiency and thermal performance.
Equivalent
The FGA20N120FTDTU is a 1200V, 20A IGBT. Equivalent products include the Infineon IGBT modules like the BSM150GB120DN2, the ON Semiconductor MBRF20120CT, and the Mitsubishi CM120DY-24NF. Always check specifications for voltage, current ratings, and thermal performance to ensure compatibility.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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