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FFH60UP60S
DIODE GEN PURP 600V 60A TO247-2
- メーカー
- Mfr。パート #FFH60UP60S
- パッケージ TO-247-2
- データシート
- 在庫中4696
100% オリジナル &新しい
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365日の保証
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仕様
| Package | Tube |
| ProductStatus | Active |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 600 V |
| Current-AverageRectified(Io) | 60A |
| Voltage-Forward(Vf)(Max)@If | 1.7 V @ 60 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| ReverseRecoveryTime(trr) | 80 ns |
| Current-ReverseLeakage@Vr | 100 µA @ 600 V |
| MountingType | Through Hole |
| Package/Case | TO-247-2 |
| SupplierDevicePackage | TO-247-2 |
概要
Description
The FFH60UP60S is a high-performance, high-voltage N-channel MOSFET designed for efficient power management in various applications. It typically features low on-resistance, fast switching speeds, and high thermal stability, making it suitable for power supplies, motor drives, and other high-efficiency circuits.
Key characteristics include a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 60A, depending on the specific conditions and package. Its robust design allows for handling significant power loads, making it ideal for industrial applications, automotive systems, and renewable energy solutions like solar inverters.
The FFH60UP60S is often evaluated for its performance in both switching and linear applications, where efficiency and reliability are crucial. When designing circuits with this MOSFET, proper heat dissipation methods should be considered to ensure optimal performance and longevity.
Key characteristics include a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 60A, depending on the specific conditions and package. Its robust design allows for handling significant power loads, making it ideal for industrial applications, automotive systems, and renewable energy solutions like solar inverters.
The FFH60UP60S is often evaluated for its performance in both switching and linear applications, where efficiency and reliability are crucial. When designing circuits with this MOSFET, proper heat dissipation methods should be considered to ensure optimal performance and longevity.
Features
The FFH60UP60S is a high-performance, low-profile fan designed for efficient cooling in various applications. Key features include:
1. Compact Design: Its low-profile structure allows for easy installation in space-constrained environments.
2. High Airflow: Delivers impressive airflow rates, ensuring effective heat dissipation.
3. Energy Efficient: Designed to minimize power consumption while maintaining performance.
4. Durability: Built with robust materials, ensuring long life and reliability even in demanding conditions.
5. Quiet Operation: Engineered for low noise levels, making it suitable for noise-sensitive applications.
6. Versatile Applications: Ideal for use in electronics, HVAC systems, and industrial machinery.
These features make the FFH60UP60S an excellent choice for efficient thermal management across various sectors.
1. Compact Design: Its low-profile structure allows for easy installation in space-constrained environments.
2. High Airflow: Delivers impressive airflow rates, ensuring effective heat dissipation.
3. Energy Efficient: Designed to minimize power consumption while maintaining performance.
4. Durability: Built with robust materials, ensuring long life and reliability even in demanding conditions.
5. Quiet Operation: Engineered for low noise levels, making it suitable for noise-sensitive applications.
6. Versatile Applications: Ideal for use in electronics, HVAC systems, and industrial machinery.
These features make the FFH60UP60S an excellent choice for efficient thermal management across various sectors.
Package
The FFH60UP60S is typically packaged in a TO-247 housing type, which is commonly used for high-power semiconductors. This package type provides good thermal performance and is suitable for applications requiring efficient heat dissipation.
Pinout
The FFH60UP60S is an N-channel MOSFET with a total of 6 pins. Its primary functions include acting as a switch or amplifier in electronic circuits. The pin configuration is as follows:
1. Gate (G): Controls the operation of the MOSFET by applying voltage.
2. Drain (D): The terminal through which the current exits the MOSFET when it is turned on.
3. Source (S): The terminal through which the current enters the MOSFET.
The device is designed for high voltage and current applications, typically used in power electronics, such as power supplies and motor drives. Its maximum ratings include a drain-source voltage of 600V and a continuous drain current of 60A, making it suitable for various high-power applications. Always refer to the specific datasheet for detailed electrical characteristics and thermal management guidelines.
1. Gate (G): Controls the operation of the MOSFET by applying voltage.
2. Drain (D): The terminal through which the current exits the MOSFET when it is turned on.
3. Source (S): The terminal through which the current enters the MOSFET.
The device is designed for high voltage and current applications, typically used in power electronics, such as power supplies and motor drives. Its maximum ratings include a drain-source voltage of 600V and a continuous drain current of 60A, making it suitable for various high-power applications. Always refer to the specific datasheet for detailed electrical characteristics and thermal management guidelines.
Manufacturer
The FFH60UP60S is manufactured by FHK, a company that specializes in the production of heat exchangers and related equipment. FHK focuses on providing advanced thermal solutions for various industries, including HVAC (Heating, Ventilation, and Air Conditioning), refrigeration, and industrial applications. The company is known for its commitment to innovation, quality, and efficiency in thermal management systems.
Application
The FFH60UP60S is a high-performance IGBT (Insulated Gate Bipolar Transistor) used in various application areas, including industrial motor drives, renewable energy systems (such as solar inverters), induction heating, and UPS (Uninterruptible Power Supply) systems. Its high voltage and current handling capabilities make it suitable for power conversion and control in both consumer and industrial electronics.
Equivalent
The FFH60UP60S is a high-voltage IGBT (Insulated Gate Bipolar Transistor) module. Equivalent products include the FGH60UP60S from Fairchild, the IGBT modules from Infineon like the IKW60N60T2, and similar models from ON Semiconductor and Mitsubishi. Always verify specifications and ratings for compatibility in your specific application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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