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FFA60UA60DN

Name: FFA60UA60DN
Rating: 4.7 (12 reviews)

DIODE ARRAY GP 600V 30A TO-3PN

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Mfr。パート #FFA60UA60DN
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仕様

Part Status	Obsolete
Base Product Number	FFA60UA60
Diode Configuration	1 Pair Common Cathode
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	600 V
Current - Average Rectified (Io) (per Diode)	30A
Voltage - Forward (Vf) (Max) @ If	2.2 V @ 30 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	100 µA @ 600 V
Operating Temperature - Junction	-65°C ~ 150°C
Mounting Type	Through Hole
Package	TO-3P-3, SC-65-3
Supplier Device Package	TO-3PN
Packaging	Tube
Reverse Recovery Time (trr)	90 ns

概要

Description

The FFA60UA60DN is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It typically features a N-channel configuration, allowing it to handle large currents and voltages, which makes it suitable for use in power supply circuits, motor drivers, and other high-power applications.
Key specifications often include a high breakdown voltage, low on-resistance, and fast switching speeds, which contribute to improved thermal performance and energy efficiency. The FFA60UA60DN is commonly used in both consumer electronics and industrial applications due to its reliability and performance.
When integrating this component, it’s important to consider its thermal management, gate drive requirements, and switching characteristics to ensure optimal performance in your circuit design.

Features

The FFA60UA60DN is a high-performance, low-voltage MOSFET designed for various applications such as DC-DC converters, power management systems, and motor drives. Key features include:
1. Voltage Rating: Typically operates at 60V, suitable for a range of power applications.
2. Low Rds(on): Offers a low on-resistance, which reduces conduction losses and enhances efficiency.
3. Fast Switching Speed: Supports high-frequency operations, making it ideal for switching applications.
4. Thermal Performance: Designed with a robust thermal capability, allowing for better heat dissipation.
5. Package Type: Usually comes in compact configurations (e.g., TO-220, DPAK) for easier integration into circuits.
6. Gate Threshold Voltage: Features a low gate threshold voltage for compatibility with various driving circuits.
Overall, the FFA60UA60DN is optimized for efficiency and reliability in demanding electronic applications.

Package

The FFA60UA60DN is packaged in a TO-220 format, which is commonly used for power transistors and modules. This package type provides efficient heat dissipation and is designed for applications requiring higher thermal performance.

Pinout

The FFA60UA60DN is a power MOSFET with a total of 8 pins. Its primary function is to serve as a high-voltage, high-current switch in various applications, including power supplies and motor control.
Here is a brief description of its pin configuration:
1. Gate (G): Controls the MOSFET operation.
2. Drain (D): The main current-carrying terminal; power flows out.
3. Source (S): Connects to ground or negative supply.
4. Gate (G): Additional gate connection for enhanced control.
5. Drain (D): Additional drain terminal for higher current handling.
6. Source (S): Additional source terminal for improved thermal management.
7. Gate (G): Another gate terminal for redundancy in control.
8. Drain (D): Final drain terminal.
This configuration allows for better performance and reliability in applications requiring efficient power management. For specific electrical characteristics and ratings, refer to the manufacturer's datasheet.

Manufacturer

The FFA60UA60DN is manufactured by Infineon Technologies AG, a global semiconductor company based in Germany. Infineon specializes in designing and manufacturing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on innovations that enhance energy efficiency, safety, and connectivity. Infineon is known for its commitment to sustainability and advancing technology in areas like electric mobility and renewable energy.

Application

The FFA60UA60DN is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronics applications. Its key application areas include renewable energy systems (like solar inverters), motor drives, industrial automation, and power supplies. It is ideal for high-efficiency switching applications, enabling efficient control of electrical energy in various sectors.

Equivalent

The FFA60UA60DN chip is equivalent to the FFA60UA60DN, FFA60UA60D, and similar models in the FFA series. Depending on specific requirements, alternatives may also include other 600V, 60A IGBTs from manufacturers like Infineon, ON Semiconductor, or Mitsubishi, ensuring similar specifications in voltage, current rating, and package type. Always check the datasheets for precise electrical characteristics and thermal performance before substitution.