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FF900R12ME7_B11
IGBT Modules MEDIUM POWER ECONO
- メーカー
- Mfr。パート #FF900R12ME7_B11
- パッケージ
- データシート FF900R12ME7_B11 DataSheet
- 在庫中25698
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仕様
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概要
Description
The FF900R12ME7_B11 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies. Designed for industrial applications, it features a maximum collector current of 900 A and a collector-emitter voltage rating of 1,200 V. This module is part of the FFD series, which is known for its efficiency and reliability in power conversion applications such as motor drives, renewable energy systems, and UPS systems.
Key features of the FF900R12ME7_B11 include low conduction and switching losses, a robust thermal design for better heat dissipation, and a built-in diode for improved performance in various applications. The module's compact design facilitates easy integration into power electronic systems. Additionally, it supports high-frequency operations, making it ideal for modern applications requiring precise control and efficiency.
Overall, the FF900R12ME7_B11 is suitable for engineers and developers seeking a reliable solution for high-power applications with stringent efficiency and performance requirements.
Key features of the FF900R12ME7_B11 include low conduction and switching losses, a robust thermal design for better heat dissipation, and a built-in diode for improved performance in various applications. The module's compact design facilitates easy integration into power electronic systems. Additionally, it supports high-frequency operations, making it ideal for modern applications requiring precise control and efficiency.
Overall, the FF900R12ME7_B11 is suitable for engineers and developers seeking a reliable solution for high-power applications with stringent efficiency and performance requirements.
Features
The FF900R12ME7_B11 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for various industrial applications, particularly in power conversion systems. Key features include:
1. Voltage Rating: 1200V, suitable for medium voltage applications.
2. Current Rating: 900A, allowing for high current handling.
3. Low Switching Losses: Optimized for efficiency, contributing to reduced thermal management requirements.
4. High Thermal Conductivity: Integrated with a robust thermal management design for effective heat dissipation.
5. Modular Design: Facilitates easy integration into power systems and enhances reliability.
6. Insulated Baseplate: Provides electrical insulation while ensuring effective cooling.
7. Applications: Widely used in inverter systems, motor drives, and renewable energy systems like solar inverters.
Overall, the FF900R12ME7_B11 is ideal for applications requiring high power density, efficiency, and reliability.
1. Voltage Rating: 1200V, suitable for medium voltage applications.
2. Current Rating: 900A, allowing for high current handling.
3. Low Switching Losses: Optimized for efficiency, contributing to reduced thermal management requirements.
4. High Thermal Conductivity: Integrated with a robust thermal management design for effective heat dissipation.
5. Modular Design: Facilitates easy integration into power systems and enhances reliability.
6. Insulated Baseplate: Provides electrical insulation while ensuring effective cooling.
7. Applications: Widely used in inverter systems, motor drives, and renewable energy systems like solar inverters.
Overall, the FF900R12ME7_B11 is ideal for applications requiring high power density, efficiency, and reliability.
Package
The FF900R12ME7_B11 is packaged in a TO-247 format, which is a type of surface-mount package designed for high-power semiconductor devices. This package type allows for efficient heat dissipation and provides robust electrical performance.
Pinout
The FF900R12ME7_B11 is an IGBT module from Infineon, specifically part of the EasyPACK series. It features a total of 8 pins. The primary functions of these pins include:
1. Collector (C): Connects to the load or higher potential side of the circuit.
2. Emitter (E): Connects to the ground or lower potential side.
3. Gate (G): Used for control signal input to turn the IGBT on or off.
Typically, the pin configuration includes:
- U, V, W: Motor phase outputs (if used in inverter applications).
- Vcc and Vee: Power supply connections for driving the module.
- Gate pins: For controlling the IGBT turn-on/turn-off.
- Sense pins: For monitoring current or voltage as needed.
For specific pin assignments, refer to the manufacturer's datasheet or technical documentation.
1. Collector (C): Connects to the load or higher potential side of the circuit.
2. Emitter (E): Connects to the ground or lower potential side.
3. Gate (G): Used for control signal input to turn the IGBT on or off.
Typically, the pin configuration includes:
- U, V, W: Motor phase outputs (if used in inverter applications).
- Vcc and Vee: Power supply connections for driving the module.
- Gate pins: For controlling the IGBT turn-on/turn-off.
- Sense pins: For monitoring current or voltage as needed.
For specific pin assignments, refer to the manufacturer's datasheet or technical documentation.
Manufacturer
The FF900R12ME7_B11 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in power semiconductors, microcontrollers, and other components used in various applications including automotive, industrial, and consumer electronics. The company is known for its innovations in power management technologies, contributing to energy efficiency and performance in electronic systems. Infineon is a leading player in the global semiconductor market, focusing on sustainability and advanced technology solutions.
Application
The FF900R12ME7_B11 is a IGBT (Insulated Gate Bipolar Transistor) module commonly used in high-power applications such as industrial drives, renewable energy systems (like solar inverters), and traction systems for electric vehicles. It is suitable for applications requiring efficient power conversion, low switching losses, and high reliability in harsh environments.
Equivalent
The FF900R12ME7_B11 chip, a part of the Infineon IGBT module family, has several equivalent products, including the FFP900R12KT4, FFS900R12ME4, and FFD900R12ME4. When looking for equivalents, consider parameters like voltage ratings, current capabilities, and thermal performance to ensure compatibility. Always consult the manufacturer's datasheets for precise specifications.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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