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FDT1600N10ALZ
N-CHANNEL POWERTRENCH MOSFET 100
- メーカー
- Mfr。パート #FDT1600N10ALZ
- パッケージ SOT-223-4
- データシート
- 在庫中2472
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仕様
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 5.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 160mOhm @ 2.8A, 10V |
| Vgs(th)(Max)@Id | 2.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 3.77 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 225 pF @ 50 V |
| PowerDissipation(Max) | 10.42W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223-4 |
概要
Description
The FDT1600N10ALZ is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power management applications. It is part of the FDT series, featuring low on-resistance and high-speed switching capabilities, making it suitable for both high-frequency and high-efficiency applications, such as in power supplies, motor drives, and DC-DC converters.
Key specifications often include a maximum drain-source voltage (Vds) of around 100V, a continuous drain current (Id) in the order of tens of amps, and a low gate threshold voltage, allowing for efficient operation in various circuits. The package typically offers good thermal performance, essential for maintaining reliability during operation.
The FDT1600N10ALZ is known for its ruggedness and is often used in automotive, industrial, and consumer electronics applications, where robustness and efficiency are critical. It is essential to refer to the manufacturer's datasheet for detailed electrical characteristics and thermal management guidelines for optimal use in specific applications.
Key specifications often include a maximum drain-source voltage (Vds) of around 100V, a continuous drain current (Id) in the order of tens of amps, and a low gate threshold voltage, allowing for efficient operation in various circuits. The package typically offers good thermal performance, essential for maintaining reliability during operation.
The FDT1600N10ALZ is known for its ruggedness and is often used in automotive, industrial, and consumer electronics applications, where robustness and efficiency are critical. It is essential to refer to the manufacturer's datasheet for detailed electrical characteristics and thermal management guidelines for optimal use in specific applications.
Features
The FDT1600N10ALZ is a high-performance N-channel MOSFET designed for various applications in power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (ID) of up to 160A, enabling it to manage significant loads.
3. Low On-Resistance: With a low RDS(on) typically around 10 mΩ, it offers efficient power conduction, reducing heat generation and energy loss during operation.
4. Fast Switching Speed: Designed for rapid switching, it is ideal for applications requiring quick response times, such as in power converters and motor drives.
5. Thermal Performance: With a robust thermal management capability, it can operate effectively in demanding environments.
These features make the FDT1600N10ALZ an ideal choice for applications in automotive, industrial, and consumer electronics where efficiency and reliability are crucial.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (ID) of up to 160A, enabling it to manage significant loads.
3. Low On-Resistance: With a low RDS(on) typically around 10 mΩ, it offers efficient power conduction, reducing heat generation and energy loss during operation.
4. Fast Switching Speed: Designed for rapid switching, it is ideal for applications requiring quick response times, such as in power converters and motor drives.
5. Thermal Performance: With a robust thermal management capability, it can operate effectively in demanding environments.
These features make the FDT1600N10ALZ an ideal choice for applications in automotive, industrial, and consumer electronics where efficiency and reliability are crucial.
Package
The FDT1600N10ALZ is typically packaged in a DPAK (TO-252) format. This package is designed for surface mounting and features a compact footprint suitable for high-power applications.
Pinout
The FDT1600N10ALZ is a N-channel MOSFET with a pin count of 3. The pin configuration typically includes:
1. Gate (G) - This pin controls the on/off state of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D) - This is the terminal through which the current exits the MOSFET when it is in the 'on' state.
3. Source (S) - This terminal is where the current enters the MOSFET.
The FDT1600N10ALZ is designed for high-speed switching applications, making it suitable for use in power management circuits, converters, and motor drivers. Its low on-resistance and fast switching capabilities enhance efficiency in various electronic applications.
1. Gate (G) - This pin controls the on/off state of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D) - This is the terminal through which the current exits the MOSFET when it is in the 'on' state.
3. Source (S) - This terminal is where the current enters the MOSFET.
The FDT1600N10ALZ is designed for high-speed switching applications, making it suitable for use in power management circuits, converters, and motor drivers. Its low on-resistance and fast switching capabilities enhance efficiency in various electronic applications.
Manufacturer
The FDT1600N10ALZ is manufactured by Fujitsu Limited, a multinational corporation based in Japan. Fujitsu is a leading provider of IT services and products, including computing products, servers, storage solutions, and telecommunications equipment. The company specializes in offering a wide range of technology solutions, from hardware and software to consulting services, primarily aimed at businesses and government organizations. Established in 1935, Fujitsu has a strong global presence and is known for its innovation in information technology and electronics.
Application
The FDT1600N10ALZ is a high-performance power MOSFET primarily used in applications such as DC-DC converters, motor drives, power management systems, and renewable energy systems. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power delivery in industrial, automotive, and consumer electronics.
Equivalent
The FDT1600N10ALZ is a N-channel MOSFET from Fairchild Semiconductor. Equivalent products include:
1. IRF160 (International Rectifier)
2. STP16NF06 (STMicroelectronics)
3. BSS160 (NXP Semiconductors)
4. SiHF160N10 (Vishay)
Always verify the specifications like voltage, current ratings, and threshold voltage for your specific application.
1. IRF160 (International Rectifier)
2. STP16NF06 (STMicroelectronics)
3. BSS160 (NXP Semiconductors)
4. SiHF160N10 (Vishay)
Always verify the specifications like voltage, current ratings, and threshold voltage for your specific application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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