画像は参照用のみです。
FDS9435A
SMALL SIGNAL FIELD-EFFECT TRANSI
- メーカー
- Mfr。パート #FDS9435A
- パッケージ SOIC-8
- データシート FDS9435A DataSheet
- 在庫中6754
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 5.3A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 50mOhm @ 5.3A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 14 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 528 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
概要
Description
The FDS9435A is a dual N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance (RDS(on)), which minimizes conduction losses and enhances thermal performance, making it suitable for use in DC-DC converters, synchronous rectification, and other power switching applications.
Key specifications include a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of 56A at a specified temperature, and a low gate threshold voltage. Its compact package and high-performance characteristics allow for efficient space utilization on printed circuit boards (PCBs).
This MOSFET also includes a fast switching speed, ensuring minimal switching losses, which is crucial for applications requiring high-frequency operation.
Overall, the FDS9435A is ideal for designers looking to improve power efficiency and thermal management in modern electronic devices.
Key specifications include a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of 56A at a specified temperature, and a low gate threshold voltage. Its compact package and high-performance characteristics allow for efficient space utilization on printed circuit boards (PCBs).
This MOSFET also includes a fast switching speed, ensuring minimal switching losses, which is crucial for applications requiring high-frequency operation.
Overall, the FDS9435A is ideal for designers looking to improve power efficiency and thermal management in modern electronic devices.
Features
The FDS9435A is a dual N-channel MOSFET designed for power management applications. Key features include:
1. Low On-Resistance (R_DS(on)): Offers low on-state resistance for efficient operation, reducing power loss and heat generation.
2. High Speed: Supports fast switching speeds, making it suitable for high-frequency applications.
3. Low Gate Charge (Q_g): Requires less power to drive the gate, improving efficiency and reducing drive requirements.
4. High Voltage Rating: Typically handles up to 30V, making it suitable for various power supply circuits.
5. Compact Package: Available in a small footprint SO-8 package, facilitating space-saving designs.
6. Thermal Performance: Designed with good thermal conductivity to manage heat dissipation effectively.
7. Applications: Ideal for use in DC-DC converters, load switches, and power management in consumer electronics and automotive applications.
These features make the FDS9435A a versatile choice for designers seeking reliable, efficient MOSFET solutions in their circuitry.
1. Low On-Resistance (R_DS(on)): Offers low on-state resistance for efficient operation, reducing power loss and heat generation.
2. High Speed: Supports fast switching speeds, making it suitable for high-frequency applications.
3. Low Gate Charge (Q_g): Requires less power to drive the gate, improving efficiency and reducing drive requirements.
4. High Voltage Rating: Typically handles up to 30V, making it suitable for various power supply circuits.
5. Compact Package: Available in a small footprint SO-8 package, facilitating space-saving designs.
6. Thermal Performance: Designed with good thermal conductivity to manage heat dissipation effectively.
7. Applications: Ideal for use in DC-DC converters, load switches, and power management in consumer electronics and automotive applications.
These features make the FDS9435A a versatile choice for designers seeking reliable, efficient MOSFET solutions in their circuitry.
Package
The FDS9435A is available in a SO-8 (Small Outline) package type, which is a surface-mount package commonly used for integrated circuits. This package type is designed for efficient thermal management and space-saving on PCBs.
Pinout
The FDS9435A is a dual N-channel MOSFET packaged in an 8-lead SOIC (Small Outline Integrated Circuit) format. It features a pin count of 8.
The primary functions of the pins are as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Connects to the source of the first MOSFET.
3. Drain 1 (D1): Connects to the drain of the first MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Connects to the source of the second MOSFET.
6. Drain 2 (D2): Connects to the drain of the second MOSFET.
7. Drain 1/Source 2 (D1/S2): Internal connection for the two MOSFETs, allowing for a complementary configuration.
8. Common Ground/Source (GND): Common reference point for the two MOSFETs.
This device is commonly used for power management applications, such as load switching and battery management systems.
The primary functions of the pins are as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Connects to the source of the first MOSFET.
3. Drain 1 (D1): Connects to the drain of the first MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Connects to the source of the second MOSFET.
6. Drain 2 (D2): Connects to the drain of the second MOSFET.
7. Drain 1/Source 2 (D1/S2): Internal connection for the two MOSFETs, allowing for a complementary configuration.
8. Common Ground/Source (GND): Common reference point for the two MOSFETs.
This device is commonly used for power management applications, such as load switching and battery management systems.
Manufacturer
The FDS9435A is manufactured by ON Semiconductor, a company that specializes in semiconductor solutions. ON Semiconductor provides a wide range of products, including analog, digital, and mixed-signal devices, as well as power management and high-performance solutions. The company serves various industries such as automotive, industrial, communications, and consumer electronics. With a focus on innovation and sustainability, ON Semiconductor is recognized for its contributions to energy-efficient technologies.
Application
The FDS9435A is a dual N-channel MOSFET used in various applications, including power management systems, DC-DC converters, and load switching. It is suitable for use in battery management systems, power supplies, and motor control circuits, due to its low on-resistance and fast switching capabilities, enhancing efficiency in electronic devices.
Equivalent
The FDS9435A is an N-channel MOSFET commonly used in power management applications. Equivalent products may include the BSS138, IRLZ44N, and FDS6910. When selecting an equivalent, ensure similar specifications such as voltage rating, current rating, and R_ds(on) for optimal performance. Always verify datasheets for exact parameters before substituting.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25R8035FM1IL0
Macronix
-
MX25L3233FZBI-08Q
Macronix
-
MX25L3233FM1I-08Q
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX25V5126FM1I
Macronix
-
MX25V2033FM1I
Macronix
-
MX25V16066M1I02
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX25U25643GZNI00
Macronix
-
MX25V1635FM2I
Macronix
-
MX25L12833FM2I-10..
Macronix