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FDS6912A
MOSFET 2N-CH 30V 6A 8SOIC
- メーカー
- Mfr。パート #FDS6912A
- パッケージ SOIC-8
- データシート FDS6912A DataSheet
- 在庫中4821
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 6A |
| RdsOn(Max)@IdVgs | 28mOhm @ 6A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 8.1nC @ 5V |
| InputCapacitance(Ciss)(Max)@Vds | 575pF @ 15V |
| Power-Max | 900mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概要
Description
The FDS6912A is a dual N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance, making it suitable for use in various power conversion circuits, including synchronous rectification in DC-DC converters and load switching in power supplies.
With its low gate charge and fast switching capabilities, the FDS6912A improves the efficiency of power systems, reducing losses and heat generation. The device is housed in a compact surface-mount package, allowing for space-saving designs in consumer electronics, automotive applications, and industrial systems.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a maximum continuous drain current (I_D) of 28A, and a low R_DS(on) of around 10 mΩ. These features make the FDS6912A a reliable choice for engineers looking to optimize performance and efficiency in their designs.
With its low gate charge and fast switching capabilities, the FDS6912A improves the efficiency of power systems, reducing losses and heat generation. The device is housed in a compact surface-mount package, allowing for space-saving designs in consumer electronics, automotive applications, and industrial systems.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a maximum continuous drain current (I_D) of 28A, and a low R_DS(on) of around 10 mΩ. These features make the FDS6912A a reliable choice for engineers looking to optimize performance and efficiency in their designs.
Features
The FDS6912A is a dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low On-Resistance (RDS(on)): Ensures minimal power loss and enhances efficiency during operation, making it suitable for battery-powered devices.
2. High-Speed Switching: Facilitates fast switching times, reducing transition losses and improving performance in high-frequency applications.
3. High Current Handling: Capable of managing substantial current loads, suitable for power supply and motor control applications.
4. Compact Package: Typically available in a small surface-mount package, which aids in space-saving designs.
5. Temperature Range: Operates effectively over a wide temperature range, ensuring reliability in various environments.
6. Gate Threshold Voltage: Optimized to work with standard drive voltages, providing flexibility in circuit design.
These features make the FDS6912A suitable for applications in power management, consumer electronics, and automotive systems.
1. Low On-Resistance (RDS(on)): Ensures minimal power loss and enhances efficiency during operation, making it suitable for battery-powered devices.
2. High-Speed Switching: Facilitates fast switching times, reducing transition losses and improving performance in high-frequency applications.
3. High Current Handling: Capable of managing substantial current loads, suitable for power supply and motor control applications.
4. Compact Package: Typically available in a small surface-mount package, which aids in space-saving designs.
5. Temperature Range: Operates effectively over a wide temperature range, ensuring reliability in various environments.
6. Gate Threshold Voltage: Optimized to work with standard drive voltages, providing flexibility in circuit design.
These features make the FDS6912A suitable for applications in power management, consumer electronics, and automotive systems.
Package
The FDS6912A is typically available in a surface-mount package type, specifically the SO-8 (Small Outline) package. This allows for efficient thermal performance and compact board design in various applications.
Pinout
The FDS6912A is a dual N-channel MOSFET in a SO-8 package, featuring a pin count of 8. Its primary function is to serve as a low-side switch in power management applications, such as DC-DC converters and load switching.
Here are the pin functions:
1. Gate 1 (G1): Controls the first MOSFET.
2. Source 1 (S1): Connects to the ground or load for the first MOSFET.
3. Drain 1 (D1): Connects to the power source for the first MOSFET.
4. Drain 2 (D2): Connects to the power source for the second MOSFET.
5. Source 2 (S2): Connects to the ground or load for the second MOSFET.
6. Gate 2 (G2): Controls the second MOSFET.
7. N/C (Not Connected): These pins are unused and should not be connected.
8. N/C (Not Connected): Same as above.
The FDS6912A is designed for low on-resistance and high-speed switching, making it suitable for efficient power management applications.
Here are the pin functions:
1. Gate 1 (G1): Controls the first MOSFET.
2. Source 1 (S1): Connects to the ground or load for the first MOSFET.
3. Drain 1 (D1): Connects to the power source for the first MOSFET.
4. Drain 2 (D2): Connects to the power source for the second MOSFET.
5. Source 2 (S2): Connects to the ground or load for the second MOSFET.
6. Gate 2 (G2): Controls the second MOSFET.
7. N/C (Not Connected): These pins are unused and should not be connected.
8. N/C (Not Connected): Same as above.
The FDS6912A is designed for low on-resistance and high-speed switching, making it suitable for efficient power management applications.
Manufacturer
The FDS6912A is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in designing and manufacturing a wide range of electronic components including power management, analog, logic, and discrete devices. The company serves various industries such as automotive, industrial automation, communications, consumer electronics, and computing. Known for its commitment to innovation and efficiency, ON Semiconductor focuses on providing energy-efficient solutions that help customers solve their most challenging engineering problems.
Application
The FDS6912A is commonly used in various applications, including power management in DC-DC converters, battery management systems, load switching, and power routing in consumer electronics. Its features, such as low on-resistance and fast switching speeds, make it suitable for high-efficiency designs in smartphones, tablets, laptops, and other portable devices. Additionally, it can be utilized in automotive and industrial applications where efficient power delivery is crucial.
Equivalent
The FDS6912A is a dual N-channel MOSFET typically used in power management applications. Equivalent products include the Si7460, BSS138, and FDS6910. Other options may include the BSS123 and AO3400, depending on the specific requirements like voltage, current rating, and package type. Always verify specifications for proper compatibility in your application.
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