FDS6675BZ

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FDS6675BZ

MOSFET P-CH 30V 11A 8SOIC

100% オリジナル &新しい

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 11A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 13mOhm @ 11A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 62 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 2470 pF @ 15 V
PowerDissipation(Max) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-SOIC

概要

Description

FDS6675BZ is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power management applications. It features a low on-resistance, which enhances efficiency and reduces heat generation during operation. This MOSFET is typically used in power supplies, DC-DC converters, and motor control circuits.
Key specifications include a maximum drain-source voltage (Vds) rating, which allows it to handle substantial voltage levels, and a high continuous drain current (Id) rating, making it suitable for high-power applications. The device is housed in a compact package, facilitating easy integration into circuit designs.
Additionally, the FDS6675BZ is known for its fast switching speed, enabling efficient performance in high-frequency applications. Its robust thermal characteristics ensure reliable operation under varying conditions. Overall, the FDS6675BZ is a versatile component widely used in electronics for reliable and efficient power management solutions.

Features

The FDS6675BZ is a dual N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Low R_DS(on): This MOSFET boasts low on-state resistance, ensuring minimal power loss and improved thermal performance during operation.
2. High Speed Switching: Ideal for high-frequency applications, it allows for rapid switching, enhancing overall efficiency.
3. High Voltage Rating: Supports up to 30V, making it suitable for various voltage applications.
4. Compact Package: It comes in a compact, surface-mount package (SOT-23), allowing for space-efficient designs.
5. Gate Threshold Voltage: Features a low gate threshold voltage, ensuring compatibility with low-voltage drive signals.
6. Robust Performance: Designed to handle high currents, it is suitable for applications such as power management, DC-DC converters, and motor drives.
Overall, the FDS6675BZ is a versatile component ideal for modern electronic designs requiring efficient power management solutions.

Package

The FDS6675BZ is packaged in a SO-8 (Small Outline 8) surface mount package.

Pinout

The FDS6675BZ is a dual N-channel MOSFET in a compact SO-8 package. It has a total of 8 pins. The pin functions are as follows:
1. Gate 1 (G1): Controls the first MOSFET (Q1).
2. Source 1 (S1): Source terminal for the first MOSFET (Q1).
3. Drain 1 (D1): Drain terminal for the first MOSFET (Q1).
4. Gate 2 (G2): Controls the second MOSFET (Q2).
5. Source 2 (S2): Source terminal for the second MOSFET (Q2).
6. Drain 2 (D2): Drain terminal for the second MOSFET (Q2).
7. Common Source (CS): Common source connection for both MOSFETs.
8. N/C (Not Connected): No internal connection.
These MOSFETs are often used in power management applications, including DC-DC converters and load switching.

Manufacturer

The FDS6675BZ is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was a leading manufacturer of high-performance semiconductor solutions, specializing in various products including MOSFETs, diodes, and other electronic components. The company was known for its innovation in power management and signal processing, serving a wide range of industries such as automotive, industrial, consumer electronics, and telecommunications. After being acquired by ON Semiconductor in 2016, Fairchild's products and technologies expanded ON Semiconductor's portfolio, enhancing their capabilities in energy-efficient solutions and advanced semiconductor technology.

Application

The FDS6675BZ is a dual N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, load switching, motor control, and power supply circuits. It is also suitable for battery management systems and high-frequency switching applications due to its low on-resistance and fast switching capabilities.

Equivalent

Equivalent products to the FDS6675BZ chip include the FDS6675N, FDS6675S, and other similar dual N-channel MOSFETs. Check specifications like voltage, current ratings, and package type for compatibility. Always refer to the manufacturer's datasheet to ensure proper functionality and interchangeability.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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