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FDS6673BZ
MOSFET P-CH 30V 14.5A 8SOIC
- メーカー
- Mfr。パート #FDS6673BZ
- パッケージ SOP8
- データシート
- 在庫中7096
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 14.5A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 7.8mOhm @ 14.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 124 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 4700 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
概要
Description
FDS6673BZ is a dual N-channel MOSFET designed for efficient power management applications. It features low on-resistance, which minimizes power loss and enhances thermal performance, making it suitable for various applications such as DC-DC converters, power supplies, and motor control. The device typically supports a wide operating voltage range, ensuring versatility in different circuits. Its compact package design allows for space-saving implementations in electronic devices. The FDS6673BZ is characterized by high-speed switching capabilities, which contribute to improved efficiency and reduced electromagnetic interference (EMI). Overall, it is an ideal choice for designers seeking reliable performance in power electronic systems.
Features
The FDS6673BZ is a N-channel MOSFET designed for a variety of power management applications. Key features include:
1. Low On-Resistance: Offers a low R_DS(on) value, which reduces conduction losses and improves efficiency.
2. High Current Rating: Capable of handling high continuous drain current, making it suitable for demanding applications.
3. Fast Switching Speed: Designed for quick switching, enhancing performance in high-frequency applications.
4. Low Gate Charge: Minimizes drive power requirements, making it efficient for use in power supply circuits.
5. Thermal Performance: Features a robust thermal package, facilitating effective heat dissipation.
6. Voltage Ratings: Operates at high breakdown voltages, ensuring reliability in various conditions.
7. Applications: Ideal for applications in DC-DC converters, motor drives, and power management systems.
This combination of features makes the FDS6673BZ a versatile choice for modern electronic designs.
1. Low On-Resistance: Offers a low R_DS(on) value, which reduces conduction losses and improves efficiency.
2. High Current Rating: Capable of handling high continuous drain current, making it suitable for demanding applications.
3. Fast Switching Speed: Designed for quick switching, enhancing performance in high-frequency applications.
4. Low Gate Charge: Minimizes drive power requirements, making it efficient for use in power supply circuits.
5. Thermal Performance: Features a robust thermal package, facilitating effective heat dissipation.
6. Voltage Ratings: Operates at high breakdown voltages, ensuring reliability in various conditions.
7. Applications: Ideal for applications in DC-DC converters, motor drives, and power management systems.
This combination of features makes the FDS6673BZ a versatile choice for modern electronic designs.
Package
The FDS6673BZ is packaged in a PowerSO-8 package type. This surface-mount package is designed for efficient thermal performance and space-saving in electronic applications.
Pinout
The FDS6673BZ is a dual N-channel MOSFET packaged in a SO-8 configuration. It has a total of 8 pins. The functions of the pins are as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): The source terminal for the first N-channel MOSFET.
3. Drain 1 (D1): The drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): The source terminal for the second N-channel MOSFET.
6. Drain 2 (D2): The drain terminal for the second N-channel MOSFET.
7. Drain 1 (D1): Shared pin for Drain of the first MOSFET.
8. Source 2 (S2): Shared pin for Source of the second MOSFET.
The FDS6673BZ is typically used in applications such as power management and load switching.
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): The source terminal for the first N-channel MOSFET.
3. Drain 1 (D1): The drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): The source terminal for the second N-channel MOSFET.
6. Drain 2 (D2): The drain terminal for the second N-channel MOSFET.
7. Drain 1 (D1): Shared pin for Drain of the first MOSFET.
8. Source 2 (S2): Shared pin for Source of the second MOSFET.
The FDS6673BZ is typically used in applications such as power management and load switching.
Manufacturer
The FDS6673BZ is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in advanced semiconductor solutions, offering a wide range of products including power management, analog, logic, and wireless components. The company focuses on providing innovative technologies for applications in automotive, industrial, communications, and consumer markets. With a commitment to sustainability and efficiency, ON Semiconductor aims to enable energy-efficient designs and support the growing demand for smart devices and IoT solutions.
Application
The FDS6673BZ is a dual N-channel MOSFET suitable for various applications, including power management in DC-DC converters, load switching, and motor control. It is commonly used in computing, consumer electronics, and automotive systems, providing efficient power handling, low RDS(on), and fast switching capabilities. Additionally, it can be employed in battery management systems and industrial applications where compact size and thermal performance are crucial.
Equivalent
The FDS6673BZ is a dual N-channel MOSFET. Equivalent products include the FDS6673B, BSS138, and AO3400. Always check the specific datasheets for electrical characteristics and package compatibility to ensure suitability for your application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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