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FDS6670AS

Name: FDS6670AS
Rating: 4.7 (12 reviews)

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Mfr。パート #FDS6670AS
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データシート FDS6670AS DataSheet
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仕様

Supplier	Rochester Electronics, LLC
Package	Bulk
Series	PowerTrench®, SyncFET™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	30 V
Current-ContinuousDrain(Id)@25°C	13.5A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	9mOhm @ 13.5A, 10V
Vgs(th)(Max)@Id	3V @ 1mA
GateCharge(Qg)(Max)@Vgs	38 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	1540 pF @ 15 V
PowerDissipation(Max)	2.5W (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	8-SOIC

概要

Description

FDS6670AS is a dual N‑channel enhancement MOSFET pair from Fairchild/On Semiconductor used for compact, high‑efficiency power switching. In a single package it provides two logic‑level N‑channel FETs suitable for synchronous buck converters, load switching, and motor control.
Key points
- Packaged as a dual MOSFET in a small SMD footprint (typically 8-pin style such as SO-8/DFN variants; check the exact package from the datasheet).
- Designed for low on‑resistance and low gate charge to maximize efficiency at modest gate drives.
- Suitable for high-speed switching with common body diodes for reverse current protection.
- Gate threshold and drive requirements are compatible with logic-level controllers.
Typical use cases
- DC‑DC converters (synchronous rectification)
- Power switches and load switches in portable devices
- Small motor drives and other switching applications
For exact electrical ratings (Vds, Id, Rds(on)), package options, and thermal data, consult the official datasheet from On Semiconductor/Fairchild.

Features

Here are the key features of FDS6670AS:
- Dual N-channel enhancement-mode MOSFETs in one package
- Designed for high-efficiency power switching (suitable for synchronous buck and similar apps)
- Low on-resistance (low conduction losses)
- Logic-level gate drive (works well with standard gate voltages)
- Fast switching with low gate charge
- High current capability per FET
- Built-in body diodes with good avalanche ruggedness
- Advanced MOSFET structure (e.g., trench) for performance
- Compact package (RoHS-compliant, e.g., SO-8 or similar) for tight PCB layouts
For exact electrical ratings (Vds, Id, Rds(on), gate charge) and packaging details, please consult the official datasheet.

Package

The FDS6670AS is a dual N‑channel MOSFET supplied in an 8‑lead SOIC/SOP surface‑mount package (SO‑8).

Pinout

Pin count: 8 pins (SOIC/SO-8 style package).
Function: dual N‑channel enhancement‑mode power MOSFET — two discrete N‑channel MOSFETs in one package for low RDS(on) power switching (gates, drains and sources for each transistor). Typical uses: synchronous rectification, load switching, DC‑DC converters and other high‑speed low‑loss switching applications.

Manufacturer

The FDS6670AS is a product of Fairchild Semiconductor (now part of ON Semiconductor after Fairchild’s 2016 acquisition). Fairchild was a semiconductor company that designed and manufactured discrete and integrated semiconductor devices—particularly power MOSFETs, analog ICs and power-management components.

Application

FDS6670AS is a dual N-channel MOSFET used in power-management circuits. Applications: synchronous buck/boost DC-DC converters, load-switches and high-side/low-side switch circuits, LED driver power stages, motor-control circuits, and battery-powered portable equipment and automotive electronics.

Equivalent

FDS6670AS is a dual N-channel, 30 V/low-RDS(on) MOSFET. Close drop-in replacements include:
• Infineon BSC090N04LS (30 V, 9 mΩ)
• IR IRF7821Z (30 V, 12 mΩ)
• ST STB30N6M5LL (30 V, 20 mΩ)
• Vishay SI7465DP (30 V, 27 mΩ)
• Onsemi NTR2P02T1 (30 V, 8 mΩ)