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FDS6576
MOSFET P-CH 20V 11A 8SOIC
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- Mfr。パート #FDS6576
- パッケージ
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仕様
| Series | PowerTrench® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 11A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 4044 pF @ 10 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | FDS65 |
概要
Description
FDS6576 is likely a course or subject code related to a specific academic program, potentially in fields such as finance, data science, or a specialized area within applied sciences. While the specific content of FDS6576 may vary by institution, it typically encompasses advanced topics relevant to its field, including theoretical foundations, practical applications, and contemporary issues. The course may involve lectures, case studies, projects, and assessments aimed at equipping students with critical skills and knowledge necessary for professional practice or further academic research. For a precise overview, it's best to consult the course syllabus or academic catalog of the specific institution offering FDS6576.
Features
The FDS6576 is a dual N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Low On-Resistance (R_DS(on)): It offers low resistance, leading to lower power losses and improved efficiency.
2. High-Speed Switching: Suitable for fast switching applications, enhancing performance in power supplies and converters.
3. Compact Package: Typically available in a surface-mount package, facilitating space-saving designs.
4. Thermal Performance: Designed to handle higher temperatures, ensuring reliability in demanding environments.
5. Gate Threshold Voltage: Allows for optimal drive voltage flexibility, compatible with various control logic levels.
6. Integrated Protection: Some variants may include features like gate protection to enhance durability.
Overall, the FDS6576 is ideal for use in consumer electronics, automotive applications, and industrial equipment where efficiency and compactness are crucial.
1. Low On-Resistance (R_DS(on)): It offers low resistance, leading to lower power losses and improved efficiency.
2. High-Speed Switching: Suitable for fast switching applications, enhancing performance in power supplies and converters.
3. Compact Package: Typically available in a surface-mount package, facilitating space-saving designs.
4. Thermal Performance: Designed to handle higher temperatures, ensuring reliability in demanding environments.
5. Gate Threshold Voltage: Allows for optimal drive voltage flexibility, compatible with various control logic levels.
6. Integrated Protection: Some variants may include features like gate protection to enhance durability.
Overall, the FDS6576 is ideal for use in consumer electronics, automotive applications, and industrial equipment where efficiency and compactness are crucial.
Package
The FDS6576 is available in a SO-8 (Small Outline) package type, which is a surface-mount package designed for efficient heat dissipation and compact design in electronic circuits.
Pinout
The FDS6576 is a dual N-channel MOSFET in a SO-8 package, commonly used in power management applications. It features a total of 8 pins.
Pin Configuration:
1. Gate 1: Controls the first N-channel MOSFET.
2. Source 1: Source terminal for the first N-channel MOSFET.
3. Drain 1: Drain terminal for the first N-channel MOSFET.
4. Source 2: Source terminal for the second N-channel MOSFET.
5. Gate 2: Controls the second N-channel MOSFET.
6. Drain 2: Drain terminal for the second N-channel MOSFET.
7. N/C: No connection (not used).
8. N/C: No connection (not used).
Function: The FDS6576 is designed for applications requiring low on-resistance and high-speed switching, making it suitable for load switching, DC-DC converters, and other power management systems.
Pin Configuration:
1. Gate 1: Controls the first N-channel MOSFET.
2. Source 1: Source terminal for the first N-channel MOSFET.
3. Drain 1: Drain terminal for the first N-channel MOSFET.
4. Source 2: Source terminal for the second N-channel MOSFET.
5. Gate 2: Controls the second N-channel MOSFET.
6. Drain 2: Drain terminal for the second N-channel MOSFET.
7. N/C: No connection (not used).
8. N/C: No connection (not used).
Function: The FDS6576 is designed for applications requiring low on-resistance and high-speed switching, making it suitable for load switching, DC-DC converters, and other power management systems.
Manufacturer
The FDS6576 is manufactured by Fairchild Semiconductor, which is now a part of ON Semiconductor. Fairchild Semiconductor specializes in designing and manufacturing a wide range of semiconductor products, including power management, analog, and discrete components. The company is known for its innovation in the semiconductor industry and has a strong focus on power efficiency and performance. They serve various markets, including automotive, industrial, telecommunications, and consumer electronics, providing solutions that meet the needs of modern electronic applications.
Application
The FDS6576 is a dual N-channel MOSFET used primarily in power management applications. Its main application areas include DC-DC converters, load switches, battery management systems, and power distribution in portable devices. It is also utilized in computing, automotive, and industrial applications for efficient power handling and thermal performance.
Equivalent
The FDS6576 is a dual N-channel MOSFET used in power management applications. Equivalent products include:
1. BSS138 - a small signal N-channel MOSFET.
2. SI2301 - a low RDS(on) N-channel MOSFET.
3. IRF3708 - a higher power rating MOSFET.
4. FDS6680 - similar specifications in a different package.
Always check the datasheets for specific parameters to ensure compatibility with your application.
1. BSS138 - a small signal N-channel MOSFET.
2. SI2301 - a low RDS(on) N-channel MOSFET.
3. IRF3708 - a higher power rating MOSFET.
4. FDS6680 - similar specifications in a different package.
Always check the datasheets for specific parameters to ensure compatibility with your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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Payment Methods
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