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FDS5351
MOSFET N-CH 60V 6.1A 8SOIC
- メーカー
- Mfr。パート #FDS5351
- パッケージ SOIC-8
- データシート FDS5351 DataSheet
- 在庫中5987
100% オリジナル &新しい
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 6.1A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 35mOhm @ 6.1A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 27 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1310 pF @ 30 V |
| PowerDissipation(Max) | 5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
概要
Description
FDS5351 is a course typically focused on advanced topics in food safety and food science. It emphasizes the principles of food preservation, microbiology, and safety regulations. Students explore methodologies for ensuring food quality, shelf-life, and safety for consumers. The curriculum may cover risk assessment, hazard analysis, and critical control points (HACCP), along with the impact of food processing techniques on safety and nutrition. Assignments often involve case studies, practical applications, and discussions on current trends in food safety and policy. The course aims to equip students with the knowledge and skills necessary for careers in food industry roles, regulatory agencies, and research institutions.
Features
The FDS5351 is a dual N-channel MOSFET designed for various applications, particularly in power management. Key features include:
1. Dual Configuration: It contains two N-channel MOSFETs in a single package, enabling space-efficient designs.
2. Low On-Resistance (RDS(on)): Provides efficient power handling with minimal conduction losses, enhancing thermal performance.
3. High Speed: Suitable for fast switching applications, making it ideal for DC-DC converters and power management circuits.
4. Wide Voltage Range: Operates within a broad range of drain-source voltages, accommodating various input conditions.
5. Compact Package: Available in an easy-to-mount package, optimizing PCB space.
6. Thermal Characteristics: Designed to manage heat effectively, promoting reliability in high-performance applications.
7. Low Gate Charge (Qg): Contributes to quicker turn-on and turn-off times, improving overall efficiency.
These features make the FDS5351 an excellent choice for automotive, telecommunications, and industrial applications requiring efficient power control.
1. Dual Configuration: It contains two N-channel MOSFETs in a single package, enabling space-efficient designs.
2. Low On-Resistance (RDS(on)): Provides efficient power handling with minimal conduction losses, enhancing thermal performance.
3. High Speed: Suitable for fast switching applications, making it ideal for DC-DC converters and power management circuits.
4. Wide Voltage Range: Operates within a broad range of drain-source voltages, accommodating various input conditions.
5. Compact Package: Available in an easy-to-mount package, optimizing PCB space.
6. Thermal Characteristics: Designed to manage heat effectively, promoting reliability in high-performance applications.
7. Low Gate Charge (Qg): Contributes to quicker turn-on and turn-off times, improving overall efficiency.
These features make the FDS5351 an excellent choice for automotive, telecommunications, and industrial applications requiring efficient power control.
Package
The FDS5351 is typically available in a PowerPAK® package type, specifically a 5x6mm, 8-lead or 10-lead surface mount configuration. This packaging is designed for high-performance applications, providing efficient thermal management and space-saving advantages.
Pinout
The FDS5351 is a dual N-channel MOSFET in a surface-mount package. It typically features a total of 8 pins. The pin configuration is as follows:
1. Gate1 (G1): Controls the first N-channel MOSFET.
2. Drain1 (D1): The drain terminal of the first MOSFET.
3. Source1 (S1): The source terminal of the first MOSFET.
4. Gate2 (G2): Controls the second N-channel MOSFET.
5. Drain2 (D2): The drain terminal of the second MOSFET.
6. Source2 (S2): The source terminal of the second MOSFET.
7. D1/S1: Common terminal for drain and source of the first MOSFET.
8. D2/S2: Common terminal for drain and source of the second MOSFET.
The FDS5351 is primarily used in power management applications, offering low RDS(on) for efficient switching and minimal heat generation.
1. Gate1 (G1): Controls the first N-channel MOSFET.
2. Drain1 (D1): The drain terminal of the first MOSFET.
3. Source1 (S1): The source terminal of the first MOSFET.
4. Gate2 (G2): Controls the second N-channel MOSFET.
5. Drain2 (D2): The drain terminal of the second MOSFET.
6. Source2 (S2): The source terminal of the second MOSFET.
7. D1/S1: Common terminal for drain and source of the first MOSFET.
8. D2/S2: Common terminal for drain and source of the second MOSFET.
The FDS5351 is primarily used in power management applications, offering low RDS(on) for efficient switching and minimal heat generation.
Manufacturer
The FDS5351 is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of innovative semiconductor solutions, including power management, analog, and sensor technologies. The company serves various markets, including automotive, industrial, communications, and consumer electronics. Headquartered in Phoenix, Arizona, ON Semiconductor focuses on sustainability and efficiency in its operations and product offerings, aiming to facilitate energy-efficient designs and enhance performance in electronic systems.
Application
FDS5351 is primarily used in applications involving high-performance power management, including battery management systems, motor control, and power supply regulation. Its features support efficient energy conversion and voltage regulation in consumer electronics, electric vehicles, and industrial automation. Additionally, it is suitable for use in renewable energy systems, such as solar inverters and energy storage solutions, enhancing overall system efficiency and reliability.
Equivalent
The FDS5351 is a dual N-channel MOSFET. Equivalent products include the BSS138, SI2302, and 2N7000 series, depending on specific voltage and current ratings. For exact replacements, consult datasheets for specifications like V_DS, I_D, and R_DS(on) to ensure compatibility with your application.
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