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FDPF10N60ZUT
POWER FIELD-EFFECT TRANSISTOR, 9
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- Mfr。パート #FDPF10N60ZUT
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仕様
| Series | UniFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF @ 25 V |
| Power Dissipation (Max) | 42W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 |
| Package / Case | TO-220-3 Full Pack |
概要
Description
The FDPF10N60ZUT is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a maximum drain-source voltage (V_DS) of 600V, a continuous drain current (I_D) of 10A, and a low R_DS(on) value, which minimizes conduction losses and enhances efficiency in power conversion applications. This device is suitable for use in switch-mode power supplies, motor control circuits, and other high-frequency applications.
The MOSFET is housed in a TO-220 package, allowing for efficient heat dissipation, making it ideal for applications requiring reliable thermal management. Its gate threshold voltage (V_GS(th)) and fast switching capabilities make it suitable for modern electronic devices that demand rapid on/off switching.
When designing with the FDPF10N60ZUT, considerations include proper heat sinking, gate drive voltage, and maximum ratings to ensure optimal performance and reliability. Overall, it is a robust solution for engineers looking to manage high-power applications efficiently.
The MOSFET is housed in a TO-220 package, allowing for efficient heat dissipation, making it ideal for applications requiring reliable thermal management. Its gate threshold voltage (V_GS(th)) and fast switching capabilities make it suitable for modern electronic devices that demand rapid on/off switching.
When designing with the FDPF10N60ZUT, considerations include proper heat sinking, gate drive voltage, and maximum ratings to ensure optimal performance and reliability. Overall, it is a robust solution for engineers looking to manage high-power applications efficiently.
Features
The FDPF10N60ZUT is an N-channel MOSFET designed for high voltage applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: It has a continuous drain current (I_D) of 10A, allowing for substantial load handling.
3. On-Resistance: The typical on-resistance (R_DS(on)) is low, around 0.45 ohms at a gate-source voltage (V_GS) of 10V, ensuring efficient operation and reduced power loss.
4. Gate Threshold Voltage: The gate threshold voltage is between 2V to 4V, enabling it to switch on effectively with low drive voltages.
5. Fast Switching Speed: It features fast switching capabilities, suitable for applications in power supplies and converters.
6. Package Type: Available in TO-220 package, facilitating easy heat dissipation and mounting.
Overall, the FDPF10N60ZUT is ideal for applications requiring high efficiency and reliability in power management and switching.
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: It has a continuous drain current (I_D) of 10A, allowing for substantial load handling.
3. On-Resistance: The typical on-resistance (R_DS(on)) is low, around 0.45 ohms at a gate-source voltage (V_GS) of 10V, ensuring efficient operation and reduced power loss.
4. Gate Threshold Voltage: The gate threshold voltage is between 2V to 4V, enabling it to switch on effectively with low drive voltages.
5. Fast Switching Speed: It features fast switching capabilities, suitable for applications in power supplies and converters.
6. Package Type: Available in TO-220 package, facilitating easy heat dissipation and mounting.
Overall, the FDPF10N60ZUT is ideal for applications requiring high efficiency and reliability in power management and switching.
Package
The FDPF10N60ZUT is packaged in a TO-220 format. This package type is commonly used for high-power applications, providing good thermal performance and ease of mounting.
Pinout
The FDPF10N60ZUT is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's operation. It is where the voltage is applied to turn the device on or off.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is in the on state. It connects to the load in a circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for current.
The FDPF10N60ZUT is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a maximum continuous drain current (I_D) of 10A, making it suitable for various power management applications in devices like power supplies and motor controllers.
1. Gate (G): This pin controls the MOSFET's operation. It is where the voltage is applied to turn the device on or off.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is in the on state. It connects to the load in a circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for current.
The FDPF10N60ZUT is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a maximum continuous drain current (I_D) of 10A, making it suitable for various power management applications in devices like power supplies and motor controllers.
Manufacturer
The FDPF10N60ZUT is manufactured by Fairchild Semiconductor, which is now a part of ON Semiconductor. Fairchild Semiconductor specializes in designing and manufacturing a wide range of semiconductor products, including power management solutions, discretes, and integrated circuits. The company is known for its innovations in the semiconductor industry and serves various markets such as automotive, industrial, and consumer electronics. Fairchild has a strong legacy in providing high-quality and reliable semiconductor technologies, particularly in power and analog applications.
Application
The FDPF10N60ZUT is a N-channel MOSFET primarily used in power electronics applications. Its key areas include switching power supplies, motor control circuits, DC-DC converters, and power management systems. It's suitable for high-voltage and high-current applications, making it ideal for industrial equipment, renewable energy systems, and consumer electronics that require efficient power switching and control.
Equivalent
The FDPF10N60ZUT is a N-channel MOSFET with a 600V rating and 10A continuous drain current. Equivalent products include IRFHC50, STP10NM60, and MTP10N60. Always check specifications for voltage, current, RDS(on), and package compatibility when selecting a substitute.
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