画像は参照用のみです。
FDP083N15A
MOSFET N-CH 150V 83A TO220-3
- メーカー
- Mfr。パート #FDP083N15A
- パッケージ TO-220-3
- データシート FDP083N15A DataSheet
- 在庫中2491
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tube |
| Series | PowerTrench® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 83A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 8.3mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 84 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6040 pF @ 25 V |
| PowerDissipation(Max) | 294W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-3 |
概要
Description
The FDP083N15A is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. With a maximum voltage rating of 150V and a continuous drain current of up to 83A, it is suitable for use in power management, motor control, and DC-DC converter circuits.
Key features include a low on-resistance (Rds(on)) of 0.083 ohms, which minimizes conduction losses and improves thermal performance. The device is housed in a TO-220 package, facilitating efficient heat dissipation. It also features a fast switching speed, making it ideal for high-frequency applications.
The FDP083N15A is often used in applications such as power supplies, renewable energy systems, and automotive electronics due to its robust performance and reliability. Its gate threshold voltage ensures compatibility with various control signals, making it versatile for different designs. Overall, it serves as a reliable component in modern electronic circuits requiring efficient power management.
Key features include a low on-resistance (Rds(on)) of 0.083 ohms, which minimizes conduction losses and improves thermal performance. The device is housed in a TO-220 package, facilitating efficient heat dissipation. It also features a fast switching speed, making it ideal for high-frequency applications.
The FDP083N15A is often used in applications such as power supplies, renewable energy systems, and automotive electronics due to its robust performance and reliability. Its gate threshold voltage ensures compatibility with various control signals, making it versatile for different designs. Overall, it serves as a reliable component in modern electronic circuits requiring efficient power management.
Features
The FDP083N15A is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: 150V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) up to 83A, suitable for high-power applications.
3. On-Resistance: Low R_DS(on) of approximately 0.08 ohms at V_GS = 10V, which reduces power losses.
4. Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, allowing for easy drive with standard logic levels.
5. Fast Switching: Optimized for speed, making it ideal for high-frequency applications.
6. Package Type: Available in TO-220 and DPAK packages, facilitating effective thermal management.
7. Applications: Commonly used in power supplies, motor drives, and DC-DC converters.
Overall, the FDP083N15A is noted for its high performance, efficiency, and versatility in power electronic applications.
1. Voltage Rating: 150V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) up to 83A, suitable for high-power applications.
3. On-Resistance: Low R_DS(on) of approximately 0.08 ohms at V_GS = 10V, which reduces power losses.
4. Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, allowing for easy drive with standard logic levels.
5. Fast Switching: Optimized for speed, making it ideal for high-frequency applications.
6. Package Type: Available in TO-220 and DPAK packages, facilitating effective thermal management.
7. Applications: Commonly used in power supplies, motor drives, and DC-DC converters.
Overall, the FDP083N15A is noted for its high performance, efficiency, and versatility in power electronic applications.
Package
The FDP083N15A is packaged in a TO-220 style package. This package type is designed for high power applications, providing good thermal performance and ease of mounting to heatsinks.
Pinout
The FDP083N15A is an N-channel MOSFET with a total of 8 pins. It is designed for applications such as switching and amplification in power electronics.
The pin configuration is as follows:
1. Gate (G) - Controls the switching action of the MOSFET.
2. Drain (D) - The terminal through which the load current flows when the MOSFET is on.
3. Source (S) - The terminal that connects to the ground or negative supply.
The other pins may be related to thermal dissipation or package mounting, depending on the specific package type (e.g., TO-220, DPAK). The FDP083N15A features low on-resistance and high current handling capabilities, making it suitable for various high-efficiency power applications.
The pin configuration is as follows:
1. Gate (G) - Controls the switching action of the MOSFET.
2. Drain (D) - The terminal through which the load current flows when the MOSFET is on.
3. Source (S) - The terminal that connects to the ground or negative supply.
The other pins may be related to thermal dissipation or package mounting, depending on the specific package type (e.g., TO-220, DPAK). The FDP083N15A features low on-resistance and high current handling capabilities, making it suitable for various high-efficiency power applications.
Manufacturer
The FDP083N15A is manufactured by Fairchild Semiconductor, a company known for its production of semiconductor devices. Fairchild specializes in a wide range of products, including power management, analog, and mixed-signal ICs, as well as discrete components like MOSFETs, diodes, and rectifiers. Founded in 1957, Fairchild played a significant role in the development of the semiconductor industry and is recognized for its innovation in technology. In 2016, Fairchild was acquired by ON Semiconductor, further expanding its capabilities and market reach in the semiconductor sector.
Application
The FDP083N15A is a high-performance N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, motor drives, power supplies, and LED lighting. It is also suitable for applications requiring efficient switching, such as inverters, audio amplifiers, and automotive electronics due to its low on-resistance and fast switching capabilities.
Equivalent
The FDP083N15A is a MOSFET from Fairchild Semiconductor. Equivalent products include the Infineon BSC093N15, Nexperia PSMN2R8-15, and Vishay SIHG45N15. Always verify specifications like voltage, current rating, and R_DS(on) to ensure compatibility in specific applications.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25R8035FM1IL0
Macronix
-
MX25V1635FZNQ03
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V2033FM1I
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX29LV160DTTI-70G
Macronix
-
MX29F040CQI-70G
Macronix
-
MX25L25645GXDI-08..
Macronix
-
MX29F040CTI-70G
Macronix
-
MX25L25735FMI-10G
Macronix