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FDN361BN
MOSFET N-CH 30V 1.4A SUPERSOT3
- メーカー
- Mfr。パート #FDN361BN
- パッケージ
- データシート FDN361BN DataSheet
- 在庫中4047
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仕様
| Series | PowerTrench® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 193 pF @ 15 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | FDN361 |
概要
Description
FDN361BN typically refers to a course or module focused on a specific subject within a curriculum, possibly related to finance, data analysis, or a technical field. While specific details might vary depending on the institution offering the course, it often covers foundational concepts, analytical skills, and practical applications relevant to the discipline. Students can expect to learn about key principles, methodologies, and tools that are essential for understanding and working within the field. The course may also include case studies, projects, or assessments to reinforce learning outcomes. Overall, FDN361BN aims to equip students with the necessary knowledge and skills to excel in their academic and professional pursuits. For precise information, it is advisable to consult the specific course description or syllabus provided by the educational institution.
Features
The FDN361BN is an N-channel MOSFET known for its high efficiency and suitability for a variety of applications. Key features include:
1. Voltage Rating: Typically, it has a maximum drain-source voltage (Vds) of 30V, allowing it to handle moderate power levels.
2. Current Rating: It can support continuous drain currents up to approximately 60A, making it suitable for high-current applications.
3. Rds(on): It boasts a low on-resistance (Rds(on)), typically around 10-15 mΩ, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is generally in the range of 1-3V, enabling it to turn on effectively with low gate drive voltage.
5. Fast Switching Speed: The FDN361BN features rapid switching capabilities, ideal for high-frequency applications.
6. Thermal Resistance: It has a low thermal resistance, allowing for effective heat dissipation, which enhances reliability and performance.
These characteristics make the FDN361BN ideal for use in power management, motor control, and switching applications.
1. Voltage Rating: Typically, it has a maximum drain-source voltage (Vds) of 30V, allowing it to handle moderate power levels.
2. Current Rating: It can support continuous drain currents up to approximately 60A, making it suitable for high-current applications.
3. Rds(on): It boasts a low on-resistance (Rds(on)), typically around 10-15 mΩ, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is generally in the range of 1-3V, enabling it to turn on effectively with low gate drive voltage.
5. Fast Switching Speed: The FDN361BN features rapid switching capabilities, ideal for high-frequency applications.
6. Thermal Resistance: It has a low thermal resistance, allowing for effective heat dissipation, which enhances reliability and performance.
These characteristics make the FDN361BN ideal for use in power management, motor control, and switching applications.
Package
The FDN361BN is typically packaged in a SOT-23 surface-mount package.
Pinout
The FDN361BN is a N-channel MOSFET in a SOT-23 package with a 3-pin configuration. The pin count is 3, and the pin functions are as follows:
1. Gate (G): This pin controls the MOSFET operation. A voltage applied to this pin turns the device on or off.
2. Drain (D): This is the output pin where the load is connected. The current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin is connected to ground or the lower potential in the circuit, completing the current path.
The FDN361BN is commonly used for low-side switching applications in various electronic circuits.
1. Gate (G): This pin controls the MOSFET operation. A voltage applied to this pin turns the device on or off.
2. Drain (D): This is the output pin where the load is connected. The current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin is connected to ground or the lower potential in the circuit, completing the current path.
The FDN361BN is commonly used for low-side switching applications in various electronic circuits.
Manufacturer
The FDN361BN is manufactured by ON Semiconductor, a global semiconductor company that specializes in designing and producing a wide range of electronic components. ON Semiconductor is known for its focus on energy-efficient solutions, including power management, analog, and discrete components, as well as sensors and connectivity solutions. The company serves various industries, including automotive, industrial, and consumer electronics. With a commitment to innovation and sustainability, ON Semiconductor plays a significant role in enabling the advancement of technology across multiple sectors.
Application
FDN361BN is primarily used in applications such as power management, voltage regulation, and DC-DC converters. Its high efficiency and low on-resistance make it suitable for battery-powered devices, LED drivers, and portable electronics. Additionally, it is utilized in consumer electronics, automotive systems, and industrial equipment for efficient energy control and thermal management.
Equivalent
The FDN361BN is a dual N-channel MOSFET. Equivalent products include the FDN361P, BSS138, BS170, and 2N7000, among others. Check specific datasheets for pin compatibility and electrical characteristics, as variations may exist.
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