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FDN337N
MOSFET N-CH 30V 2.2A SUPERSOT3
- メーカー
- Mfr。パート #FDN337N
- パッケージ SSOT-3
- データシート
- 在庫中5476
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 2.2A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 65mOhm @ 2.2A, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 9 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 300 pF @ 10 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
概要
Description
FDN337N is a course designed to introduce students to foundational concepts in a specific field, typically focusing on advanced topics related to health, nutrition, or disease management. The curriculum often emphasizes critical thinking, research methodologies, and practical applications relevant to the subject matter. Students may explore recent advancements, case studies, and evidence-based practices to understand the complexities of the field better. The course is intended to equip students with the necessary skills and knowledge to analyze and address real-world challenges effectively. By the end of the course, participants are expected to demonstrate a comprehensive understanding of the key principles and their implications in professional settings.
Features
The FDN337N is an N-channel MOSFET known for its efficient performance in various electronic applications. Key features include:
1. Voltage Rating: Typically supports high drain-source voltage (V_DS), often around 30V, making it suitable for various power applications.
2. Current Capability: It can handle significant continuous drain current (I_D), usually around 20A, which allows it to power demanding loads.
3. Low R_DS(on): The on-resistance is low, generally in the range of milliohms, leading to reduced power losses and improved thermal performance.
4. Fast Switching Speed: Ideal for high-speed switching applications, enhancing efficiency in power management.
5. Thermal Performance: Designed with adequate thermal resistance, allowing for effective heat dissipation in compact designs.
6. Package Type: Often available in TO-220 or similar package types for ease of mounting and heat sinking.
These features make the FDN337N suitable for applications in power supplies, motor control, and other high-efficiency circuits.
1. Voltage Rating: Typically supports high drain-source voltage (V_DS), often around 30V, making it suitable for various power applications.
2. Current Capability: It can handle significant continuous drain current (I_D), usually around 20A, which allows it to power demanding loads.
3. Low R_DS(on): The on-resistance is low, generally in the range of milliohms, leading to reduced power losses and improved thermal performance.
4. Fast Switching Speed: Ideal for high-speed switching applications, enhancing efficiency in power management.
5. Thermal Performance: Designed with adequate thermal resistance, allowing for effective heat dissipation in compact designs.
6. Package Type: Often available in TO-220 or similar package types for ease of mounting and heat sinking.
These features make the FDN337N suitable for applications in power supplies, motor control, and other high-efficiency circuits.
Package
The FDN337N is typically available in a SOT-23 package type. This small, surface-mount package is designed for low-power applications and provides efficient thermal performance.
Pinout
The FDN337N is a N-channel MOSFET commonly used in electronic applications. It typically comes in a TO-220 package with three pins.
Pin Count and Functions:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - The drain pin is where the current enters the MOSFET when it is in the 'on' state.
3. Source (S) - The source pin is where the current exits the MOSFET.
The FDN337N is known for its low on-resistance and fast switching capabilities, making it suitable for various applications including power management and switching circuits. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Pin Count and Functions:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - The drain pin is where the current enters the MOSFET when it is in the 'on' state.
3. Source (S) - The source pin is where the current exits the MOSFET.
The FDN337N is known for its low on-resistance and fast switching capabilities, making it suitable for various applications including power management and switching circuits. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Manufacturer
The FDN337N is a product manufactured by ON Semiconductor, a global company specializing in semiconductor solutions. ON Semiconductor designs and produces a wide range of components, including power management, analog, and logic devices, as well as sensors and integrated circuits. The company serves various industries, including automotive, industrial, and consumer electronics, providing innovative technologies that enhance energy efficiency and performance in electronic applications. ON Semiconductor is known for its focus on sustainability and commitment to advancing technology for a smarter, more connected world.
Application
FDN337N is a type of N-channel MOSFET commonly used in various applications, including power management, motor control, and switching circuits. Its features make it suitable for low-voltage applications, battery management systems, DC-DC converters, and amplifiers. It's also utilized in high-frequency switching applications due to its fast response time and efficiency.
Equivalent
The FDN337N is a dual N-channel MOSFET commonly used in switching applications. Equivalent products include the BSS138, BS170, and 2N7000. For higher current applications, alternatives like the IRLZ44N or any similar N-channel MOSFET with comparable specifications may also be considered. Always check datasheets for specific electrical characteristics to ensure compatibility.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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