FDN306P

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FDN306P

SMALL SIGNAL FIELD-EFFECT TRANSI

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

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仕様

Package Bulk
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 12 V
Current-ContinuousDrain(Id)@25°C 2.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 4.5V
RdsOn(Max)@IdVgs 40mOhm @ 2.6A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 17 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 1138 pF @ 6 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3

概要

Description

FDN306P is a foundational course that explores key principles and practices in the field of food and nutrition. It covers topics such as dietary guidelines, nutritional science, food safety, and the role of nutrition in health and disease prevention. The course emphasizes the importance of understanding macronutrients and micronutrients, as well as the impact of food choices on overall well-being. Students will learn about food systems, cultural influences on diet, and strategies for promoting healthy eating habits. Through lectures, discussions, and practical activities, participants will gain critical skills in assessing nutritional needs and developing effective dietary plans. This course is ideal for those pursuing careers in healthcare, nutrition, or related fields and aims to equip students with the knowledge needed to make informed decisions about food and nutrition in various contexts.

Features

The FDN306P is a N-channel MOSFET designed for various applications in power management and switching. Key features include:
1. Voltage Ratings: Typically supports a Drain-Source Voltage (Vds) of around 30V, allowing for versatile use in low to medium voltage applications.
2. Current Handling: It can handle continuous drain currents (Id) of up to approximately 5A, making it suitable for medium-power tasks.
3. Low On-Resistance: Offers a low on-resistance (Rds(on)), which enhances efficiency by minimizing power losses during operation.
4. Fast Switching Speed: Enables quick turn-on and turn-off times, ideal for high-frequency applications.
5. Thermal Performance: Designed with a robust package that aids in effective heat dissipation, ensuring reliable operation under load.
6. Gate Threshold Voltage: Features a suitable gate threshold voltage for efficient driving with standard logic levels.
These attributes make the FDN306P a popular choice for applications like motor control, power supply circuits, and RF amplifiers. Always refer to the specific datasheet for detailed specifications and characteristics.

Package

The FDN306P is typically packaged in a TO-92 package type. This is a small, cylindrical plastic package commonly used for transistors and other semiconductor devices.

Pinout

The FDN306P is a P-channel MOSFET that typically comes in a TO-220 package, featuring three pins. The pin configuration is as follows:
1. Gate (G): The control terminal that regulates the MOSFET's conductivity.
2. Source (S): The terminal through which current enters when the MOSFET is in the "on" state.
3. Drain (D): The terminal through which current exits the MOSFET when it is conducting.
This device is often used in applications such as switching, amplification, and power management. The FDN306P is designed for low-voltage and high-speed switching applications, making it suitable for various electronic circuits.

Manufacturer

The FDN306P is manufactured by ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, providing a wide range of products including power management, analog, logic, and mixed-signal devices. The company serves various markets, including automotive, industrial, communications, and consumer electronics. ON Semiconductor focuses on energy-efficient technologies and is involved in the development and production of components that support the growing demand for energy conservation and advanced electronics.

Application

FDN306P is commonly used in various applications including audio amplifiers, voltage regulators, and switching power supplies. Its features make it suitable for signal switching, high-frequency applications, and low-noise amplifiers. Additionally, it can be utilized in RF circuits and electronic devices requiring efficient power management and signal processing.

Equivalent

The FDN306P is a MOSFET transistor, and its equivalent products include the FDN306N and other similar P-channel MOSFETs like the IRF9520 and BS250. Always check the specific datasheets for accurate specifications and parameters to ensure compatibility.

出荷

出荷方法私たち

DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。


出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

支払い

Payment Methods

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