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FDMS86163P
MOSFET P-CH 100V 7.9A/50A 8PQFN
- メーカー
- Mfr。パート #FDMS86163P
- パッケージ PowerTDFN-8
- データシート
- 在庫中2892
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 7.9A (Ta), 50A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 22mOhm @ 7.9A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 59 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 4085 pF @ 50 V |
| PowerDissipation(Max) | 2.5W (Ta), 104W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
概要
Description
FDMS86163P is a high-performance, dual N-channel MOSFET designed for various applications, including power management and motor control. It features low on-resistance and fast switching capabilities, making it suitable for efficient power conversion and amplification. With a maximum continuous drain current rating and high breakdown voltage, the FDMS86163P ensures reliable operation in demanding environments.
This device is commonly used in DC-DC converters, battery management systems, and load switching applications. Its compact package design allows for space-saving layouts in electronic circuits. Additionally, the FDMS86163P's thermal characteristics make it suitable for high-density applications where heat dissipation is critical.
Engineers appreciate the MOSFET's performance in switching losses and its ability to handle significant load currents, contributing to overall system efficiency. Always refer to the manufacturer's datasheet for detailed specifications, thermal characteristics, and application guidelines to ensure optimal performance in specific designs.
This device is commonly used in DC-DC converters, battery management systems, and load switching applications. Its compact package design allows for space-saving layouts in electronic circuits. Additionally, the FDMS86163P's thermal characteristics make it suitable for high-density applications where heat dissipation is critical.
Engineers appreciate the MOSFET's performance in switching losses and its ability to handle significant load currents, contributing to overall system efficiency. Always refer to the manufacturer's datasheet for detailed specifications, thermal characteristics, and application guidelines to ensure optimal performance in specific designs.
Features
The FDMS86163P is a dual N-channel MOSFET designed primarily for high-performance power management applications. Key features include:
1. Low On-Resistance: It has a low R_DS(on) value, enhancing efficiency and reducing power loss during operation.
2. High Voltage Rating: Typically rated for 30V, it is suitable for a range of applications, including DC-DC converters and power management circuits.
3. Fast Switching Speed: This MOSFET offers rapid switching capabilities, making it ideal for high-frequency applications.
4. Thermal Performance: It has a robust thermal performance, allowing for better heat dissipation and improved reliability.
5. Compact Package: Available in a compact SO-8 package, it facilitates space-saving designs in various electronic circuits.
6. Enhanced Durability: Designed to handle high pulsed currents, it ensures longevity in demanding environments.
These features make the FDMS86163P suitable for use in consumer electronics, industrial applications, and automotive systems.
1. Low On-Resistance: It has a low R_DS(on) value, enhancing efficiency and reducing power loss during operation.
2. High Voltage Rating: Typically rated for 30V, it is suitable for a range of applications, including DC-DC converters and power management circuits.
3. Fast Switching Speed: This MOSFET offers rapid switching capabilities, making it ideal for high-frequency applications.
4. Thermal Performance: It has a robust thermal performance, allowing for better heat dissipation and improved reliability.
5. Compact Package: Available in a compact SO-8 package, it facilitates space-saving designs in various electronic circuits.
6. Enhanced Durability: Designed to handle high pulsed currents, it ensures longevity in demanding environments.
These features make the FDMS86163P suitable for use in consumer electronics, industrial applications, and automotive systems.
Package
The FDMS86163P is typically available in a PowerPAK® package, which is a surface-mount package designed for efficient thermal management and reduced footprint in power applications.
Pinout
The FDMS86163P is a dual N-channel MOSFET with a pin count of 8. Its primary function is to provide efficient switching and amplification in power management applications, such as DC-DC converters and load switching.
The pin configuration is as follows:
1. G1 (Gate 1) - Controls the first MOSFET.
2. D1 (Drain 1) - Drain terminal of the first MOSFET.
3. S1 (Source 1) - Source terminal of the first MOSFET.
4. G2 (Gate 2) - Controls the second MOSFET.
5. D2 (Drain 2) - Drain terminal of the second MOSFET.
6. S2 (Source 2) - Source terminal of the second MOSFET.
7. Drain and Source Common - For parallel configurations or certain applications.
8. N/C (No Connect) - Not connected to internal circuitry.
This component is often used for its low on-resistance and fast switching capabilities, enhancing overall system efficiency.
The pin configuration is as follows:
1. G1 (Gate 1) - Controls the first MOSFET.
2. D1 (Drain 1) - Drain terminal of the first MOSFET.
3. S1 (Source 1) - Source terminal of the first MOSFET.
4. G2 (Gate 2) - Controls the second MOSFET.
5. D2 (Drain 2) - Drain terminal of the second MOSFET.
6. S2 (Source 2) - Source terminal of the second MOSFET.
7. Drain and Source Common - For parallel configurations or certain applications.
8. N/C (No Connect) - Not connected to internal circuitry.
This component is often used for its low on-resistance and fast switching capabilities, enhancing overall system efficiency.
Manufacturer
The FDMS86163P is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for its expertise in power management and analog devices, serving a broad range of markets including consumer electronics, automotive, and industrial applications. The company specialized in creating a variety of semiconductor products such as MOSFETs, diodes, and integrated circuits that are essential for efficient power conversion and management in electronic systems. Following its acquisition by ON Semiconductor, the focus expanded to include a wider portfolio of innovative semiconductor solutions for energy-efficient applications and smart technology.
Application
The FDMS86163P is a N-channel MOSFET used primarily in power management applications. Its key areas include synchronous rectification in DC-DC converters, power supply circuits, battery management systems, and motor control applications. It is designed for high-efficiency switching and can handle high currents, making it suitable for consumer electronics, automotive systems, and industrial equipment.
Equivalent
The FDMS86163P is a power MOSFET optimized for synchronous buck applications. Equivalent products include the IRF3205, BSC032N08NS3, and STP16NF06. Ensure to check the specific electrical characteristics and package compatibility when selecting an equivalent.
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