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FDMS3660S
MOSFET 2N-CH 30V 30A/60A POWER56
- メーカー
- Mfr。パート #FDMS3660S
- パッケージ PowerTDFN-8
- データシート
- 在庫中3521
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) Asymmetrical |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 30A, 60A |
| RdsOn(Max)@IdVgs | 8mOhm @ 13A, 10V |
| Vgs(th)(Max)@Id | 2.7V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 29nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 1765pF @ 15V |
| Power-Max | 1W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-PowerTDFN |
概要
Description
FDMS3660S is a course code that typically refers to a specific module within an academic program, often related to finance, data management, or a similar field. The course likely covers foundational and advanced topics relevant to financial data management systems, including data analysis, financial modeling, and the use of software tools for managing financial data.
Students may learn about data integrity, reporting, and decision-making processes influenced by financial data. The curriculum may involve practical applications, case studies, and projects that help students develop skills essential for careers in finance, analytics, or business intelligence.
Overall, FDMS3660S aims to equip students with the knowledge and skills necessary to navigate the complexities of financial data management in a professional setting.
Students may learn about data integrity, reporting, and decision-making processes influenced by financial data. The curriculum may involve practical applications, case studies, and projects that help students develop skills essential for careers in finance, analytics, or business intelligence.
Overall, FDMS3660S aims to equip students with the knowledge and skills necessary to navigate the complexities of financial data management in a professional setting.
Features
The FDMS3660S is a power MOSFET designed for high-efficiency applications. Key features include:
1. Low RDS(on): This ensures minimal conduction losses, enhancing overall efficiency.
2. High Voltage Rating: Suitable for applications requiring voltages up to 60V.
3. Fast Switching Speed: Ideal for high-frequency applications, reducing switching losses.
4. Thermal Performance: It offers good thermal stability and can handle higher temperatures, ensuring reliable operation.
5. Low Gate Charge (Qg): This results in reduced driver power requirements and faster switching.
6. Compact Package: Often available in surface-mount packages, facilitating space-saving designs.
These features make the FDMS3660S suitable for various applications, including power management, DC-DC converters, and motor control.
1. Low RDS(on): This ensures minimal conduction losses, enhancing overall efficiency.
2. High Voltage Rating: Suitable for applications requiring voltages up to 60V.
3. Fast Switching Speed: Ideal for high-frequency applications, reducing switching losses.
4. Thermal Performance: It offers good thermal stability and can handle higher temperatures, ensuring reliable operation.
5. Low Gate Charge (Qg): This results in reduced driver power requirements and faster switching.
6. Compact Package: Often available in surface-mount packages, facilitating space-saving designs.
These features make the FDMS3660S suitable for various applications, including power management, DC-DC converters, and motor control.
Package
The FDMS3660S is packaged in a DPAK (also known as TO-252) format, which is a surface-mounted device package designed for high power applications. It features a compact size suitable for efficient thermal performance.
Pinout
The FDMS3660S is a dual N-channel MOSFET packaged in a 8-pin SOIC (Small Outline Integrated Circuit) package. It features a pin count of eight. The primary function of the FDMS3660S is to act as a low-side switch in power management applications, providing efficient control of load currents in various electronic devices.
The pin configuration typically includes:
1. Gate 1 - Controls the first N-channel MOSFET.
2. Source 1 - Source terminal of the first MOSFET.
3. Drain 1 - Drain terminal of the first MOSFET.
4. Gate 2 - Controls the second N-channel MOSFET.
5. Source 2 - Source terminal of the second MOSFET.
6. Drain 2 - Drain terminal of the second MOSFET.
7. Drain 1 (or Source 1) - Common connection point.
8. Source 2 (or Drain 2) - Common connection point.
This configuration allows for efficient switching and is commonly used in applications like power supply circuits and motor drivers.
The pin configuration typically includes:
1. Gate 1 - Controls the first N-channel MOSFET.
2. Source 1 - Source terminal of the first MOSFET.
3. Drain 1 - Drain terminal of the first MOSFET.
4. Gate 2 - Controls the second N-channel MOSFET.
5. Source 2 - Source terminal of the second MOSFET.
6. Drain 2 - Drain terminal of the second MOSFET.
7. Drain 1 (or Source 1) - Common connection point.
8. Source 2 (or Drain 2) - Common connection point.
This configuration allows for efficient switching and is commonly used in applications like power supply circuits and motor drivers.
Manufacturer
The FDMS3660S is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for its production of semiconductor solutions, including power management, signal conditioning, and discrete components. The company had a strong focus on innovation in the semiconductor industry, primarily serving sectors such as automotive, industrial, and consumer electronics. ON Semiconductor, formed through the merger of several companies including Fairchild, continues to provide a wide array of semiconductor products, emphasizing energy efficiency and sustainability in various applications.
Application
FDMS3660S is a high-performance N-channel MOSFET commonly used in power management applications. Its key areas include DC-DC converters, motor control, power supply circuits, and load switching. Additionally, it's utilized in automotive applications, renewable energy systems, and battery management due to its efficient switching capabilities and thermal performance.
Equivalent
The FDMS3660S is a dual N-channel MOSFET. Equivalent products include the BSS123, SI7851, and IRLZ44N. For similar specifications, you can also consider the AO3400 and FDS6910. Always check the datasheets for voltage, current ratings, and package types to ensure compatibility.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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