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FDMS1D5N03
MOSFET N-CH 30V 218A 8PQFN
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- Mfr。パート #FDMS1D5N03
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- データシート FDMS1D5N03 DataSheet
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仕様
| Series | PowerTrench® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 218A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.15mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 4.5 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 9690 pF @ 15 V |
| Power Dissipation (Max) | 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package / Case | 8-PowerTDFN |
| Base Product Number | FDMS1D5 |
概要
Description
The FDMS1D5N03 is a specific N-channel MOSFET transistor manufactured by ON Semiconductor. It is part of the PowerTrench MOSFET series, which is designed to minimize on-state resistance and reduce switching losses, making it suitable for high-efficiency power management applications. The FDMS1D5N03 typically features a low on-resistance (R_DS(on)), fast switching speeds, and a compact package, often the SO-8 or PowerPAK 8x8, enhancing thermal performance.
This MOSFET is commonly used in DC-DC converters, synchronous rectification in switching power supplies, and various load switching applications. It operates with a gate-source voltage (V_GS) of up to ±20V and can handle drain currents up to certain limits, typically specified in its datasheet. The device is optimized for low-voltage applications, often involving a maximum drain-source voltage (V_DS) of around 30V.
Overall, the FDMS1D5N03 is recognized for its efficiency and reliability in electronic circuits, contributing to the reduction of power losses and size in contemporary power management systems. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
This MOSFET is commonly used in DC-DC converters, synchronous rectification in switching power supplies, and various load switching applications. It operates with a gate-source voltage (V_GS) of up to ±20V and can handle drain currents up to certain limits, typically specified in its datasheet. The device is optimized for low-voltage applications, often involving a maximum drain-source voltage (V_DS) of around 30V.
Overall, the FDMS1D5N03 is recognized for its efficiency and reliability in electronic circuits, contributing to the reduction of power losses and size in contemporary power management systems. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Features
The FDMS1D5N03 is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Key features typically include:
1. N-Channel MOSFET: It is an N-channel device, meaning it conducts when a positive voltage is applied to the gate relative to the source.
2. Voltage and Current Ratings: It usually has a specified breakdown voltage and maximum current capacity, often in the range suitable for low to medium power applications.
3. Low On-Resistance: FDMS1D5N03 typically features low on-resistance, which minimizes power loss and heat generation during operation.
4. Fast Switching: These MOSFETs generally support fast switching speeds, making them suitable for high-efficiency power conversion and amplification.
5. Package Type: It is often available in a surface-mount package, which is suitable for high-density PCB designs.
6. Thermal Performance: Designed for efficient heat dissipation, allowing it to operate at higher power levels without overheating.
These features make the FDMS1D5N03 suitable for applications like power management, DC-DC converters, and motor control. Always refer to the specific datasheet for detailed specifications and characteristics.
1. N-Channel MOSFET: It is an N-channel device, meaning it conducts when a positive voltage is applied to the gate relative to the source.
2. Voltage and Current Ratings: It usually has a specified breakdown voltage and maximum current capacity, often in the range suitable for low to medium power applications.
3. Low On-Resistance: FDMS1D5N03 typically features low on-resistance, which minimizes power loss and heat generation during operation.
4. Fast Switching: These MOSFETs generally support fast switching speeds, making them suitable for high-efficiency power conversion and amplification.
5. Package Type: It is often available in a surface-mount package, which is suitable for high-density PCB designs.
6. Thermal Performance: Designed for efficient heat dissipation, allowing it to operate at higher power levels without overheating.
These features make the FDMS1D5N03 suitable for applications like power management, DC-DC converters, and motor control. Always refer to the specific datasheet for detailed specifications and characteristics.
Package
The FDMS1D5N03 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a package type of SO-8, which is a surface-mount package.
Pinout
The FDMS1D5N03 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ON Semiconductor. It is typically available in a Power33 package, which is a surface-mount package designed for efficient power handling. The Power33 package usually contains 8 pins.
The FDMS1D5N03 is designed for power management applications, including DC-DC converters and load switching. It features a low on-resistance (R_DS(on)), which improves efficiency by reducing power loss during operation. The MOSFET is capable of handling high current and voltage levels, making it suitable for various demanding applications.
Please consult the specific datasheet of the FDMS1D5N03 for detailed pin configuration and exact specifications, as the package type may vary slightly based on the manufacturer’s production and design updates.
The FDMS1D5N03 is designed for power management applications, including DC-DC converters and load switching. It features a low on-resistance (R_DS(on)), which improves efficiency by reducing power loss during operation. The MOSFET is capable of handling high current and voltage levels, making it suitable for various demanding applications.
Please consult the specific datasheet of the FDMS1D5N03 for detailed pin configuration and exact specifications, as the package type may vary slightly based on the manufacturer’s production and design updates.
Manufacturer
The FDMS1D5N03 is manufactured by ON Semiconductor, a company that specializes in semiconductor solutions. ON Semiconductor provides a broad range of products and services, including power and signal management, logic, discrete, and custom devices for various sectors such as automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power applications. The company is known for its focus on energy-efficient electronics and its role in promoting sustainable practices through its product offerings.
Application
The FDMS1D5N03 is a MOSFET (metal-oxide-semiconductor field-effect transistor) commonly used in various electronic applications. Its primary application areas include power management systems, DC-DC converters, load switches, and motor control circuits. It is also suitable for use in low-voltage, high-efficiency applications such as battery-powered devices, consumer electronics, and automotive systems due to its low on-resistance and fast switching capabilities.
Equivalent
The FDMS1D5N03 is a specific N-channel MOSFET. For equivalent products, you can consider MOSFETs with similar specifications such as V_DS, I_D, and R_DS(on). Potential equivalents include:
1. IRF530 by Infineon Technologies
2. 2N7002 by Fairchild Semiconductor
3. FQP30N06L by ON Semiconductor
Always check the datasheet of the alternative to ensure compatibility with your application's requirements.
1. IRF530 by Infineon Technologies
2. 2N7002 by Fairchild Semiconductor
3. FQP30N06L by ON Semiconductor
Always check the datasheet of the alternative to ensure compatibility with your application's requirements.
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