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FDMS039N08B
MOSFET N-CH 80V 19.4A/100A 8PQFN
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- Mfr。パート #FDMS039N08B
- パッケージ PowerTDFN-8
- データシート
- 在庫中4746
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 19.4A (Ta), 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.9mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 100 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 7600 pF @ 40 V |
| PowerDissipation(Max) | 2.5W (Ta), 104W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
概要
Description
FDMS039N08B is a type of N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency switching applications. It features a low on-resistance, typically around 27 milliohms, which minimizes power loss and enhances thermal performance. With a maximum drain-source voltage of 80V and a continuous drain current rating of up to 39A, it is suitable for various applications, including power management in DC-DC converters, motor drives, and power supply circuits.
The device is encapsulated in a TO-220 package, facilitating effective heat dissipation. Its fast switching capabilities make it ideal for high-frequency applications. Additionally, the FDMS039N08B is characterized by low gate charge, which allows for reduced switching losses and improved efficiency in circuit designs. Overall, this MOSFET is widely used in automotive, industrial, and consumer electronics due to its reliability and performance.
The device is encapsulated in a TO-220 package, facilitating effective heat dissipation. Its fast switching capabilities make it ideal for high-frequency applications. Additionally, the FDMS039N08B is characterized by low gate charge, which allows for reduced switching losses and improved efficiency in circuit designs. Overall, this MOSFET is widely used in automotive, industrial, and consumer electronics due to its reliability and performance.
Features
The FDMS039N08B is a n-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, making it suitable for various applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 39A at a specified temperature, allowing for robust performance in high-load scenarios.
3. On-Resistance: A low R_DS(on) of approximately 0.028 ohms at V_GS of 10V enhances efficiency by reducing power losses during operation.
4. Thermal Performance: It comes in a TO-220 package, providing good heat dissipation characteristics for better thermal management.
5. Fast Switching Speed: This MOSFET supports high-speed switching, beneficial for applications like converters and motor drives.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, allowing for easy driving with standard logic levels.
Overall, the FDMS039N08B excels in performance, making it ideal for power management, automotive, and industrial applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, making it suitable for various applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 39A at a specified temperature, allowing for robust performance in high-load scenarios.
3. On-Resistance: A low R_DS(on) of approximately 0.028 ohms at V_GS of 10V enhances efficiency by reducing power losses during operation.
4. Thermal Performance: It comes in a TO-220 package, providing good heat dissipation characteristics for better thermal management.
5. Fast Switching Speed: This MOSFET supports high-speed switching, beneficial for applications like converters and motor drives.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, allowing for easy driving with standard logic levels.
Overall, the FDMS039N08B excels in performance, making it ideal for power management, automotive, and industrial applications.
Package
The FDMS039N08B is packaged in a TO-220 format, which is a standard type for power MOSFETs. This package provides effective thermal performance and is suitable for various applications requiring efficient heat dissipation.
Pinout
The FDMS039N08B is a dual N-channel MOSFET with a total of 8 pins. Its pin configuration is as follows:
1. Gate 1 (G1) - Controls the first MOSFET.
2. Drain 1 (D1) - The drain terminal for the first MOSFET.
3. Source 1 (S1) - The source terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second MOSFET.
5. Drain 2 (D2) - The drain terminal for the second MOSFET.
6. Source 2 (S2) - The source terminal for the second MOSFET.
7. Common Source Connection (S1 & S2) - Typically connected for shared ground reference.
8. Common Drain Connection (D1 & D2) - Can be connected for parallel operation.
The FDMS039N08B is designed for high-efficiency switching applications and is commonly used in power management solutions. It features low R_DS(on), which minimizes conduction losses.
1. Gate 1 (G1) - Controls the first MOSFET.
2. Drain 1 (D1) - The drain terminal for the first MOSFET.
3. Source 1 (S1) - The source terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second MOSFET.
5. Drain 2 (D2) - The drain terminal for the second MOSFET.
6. Source 2 (S2) - The source terminal for the second MOSFET.
7. Common Source Connection (S1 & S2) - Typically connected for shared ground reference.
8. Common Drain Connection (D1 & D2) - Can be connected for parallel operation.
The FDMS039N08B is designed for high-efficiency switching applications and is commonly used in power management solutions. It features low R_DS(on), which minimizes conduction losses.
Manufacturer
The FDMS039N08B is manufactured by Fairchild Semiconductor, which is a semiconductor company that specializes in designing and producing a wide range of electronic components. Fairchild Semiconductor, now part of ON Semiconductor, focuses on power management solutions, including MOSFETs, which are widely used in various applications such as power supplies, motor control, and consumer electronics. The company is known for its innovation in semiconductor technology and its commitment to providing high-performance products for a variety of industries.
Application
The FDMS039N08B is a N-channel MOSFET commonly used in power management applications, including DC-DC converters, motor drives, and power switching circuits. Its low R_DS(on) makes it suitable for high-efficiency designs in consumer electronics, telecommunications, and automotive systems. Additionally, it is utilized in battery management systems and power distribution for its thermal performance and reliability.
Equivalent
Equivalent products to the FDMS039N08B MOSFET include the IRF3205, STP75NF75, and AOD2956. These alternatives offer similar specifications, such as voltage and current ratings, making them suitable replacements in various applications. Always verify the specific requirements of your circuit for compatibility.
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TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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