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FDMS037N08B
MOSFET N-CH 75V 100A 8PQFN
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- Mfr。パート #FDMS037N08B
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仕様
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5915 pF @ 37.5 V |
| Power Dissipation (Max) | 830mW (Ta), 104.2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package / Case | 8-PowerTDFN |
| Base Product Number | FDMS037 |
概要
Description
FDMS037N08B is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It is commonly used in power management circuits, including switching power supplies, DC-DC converters, and other applications requiring efficient power control.
Key specifications include a maximum drain-source voltage (V_DS) of 80V, a continuous drain current (I_D) of 37A, and a low on-resistance (R_DS(on)), which minimizes power loss during operation. The device typically features fast switching speeds and high thermal stability, making it suitable for high-frequency applications.
FDMS037N08B is packaged in a TO-220 or similar housing for effective heat dissipation. Its characteristics make it an ideal choice for applications that demand high reliability and efficiency, such as automotive, industrial, and consumer electronics.
For specific applications, always refer to the manufacturer's datasheet for detailed electrical characteristics and thermal performance.
Key specifications include a maximum drain-source voltage (V_DS) of 80V, a continuous drain current (I_D) of 37A, and a low on-resistance (R_DS(on)), which minimizes power loss during operation. The device typically features fast switching speeds and high thermal stability, making it suitable for high-frequency applications.
FDMS037N08B is packaged in a TO-220 or similar housing for effective heat dissipation. Its characteristics make it an ideal choice for applications that demand high reliability and efficiency, such as automotive, industrial, and consumer electronics.
For specific applications, always refer to the manufacturer's datasheet for detailed electrical characteristics and thermal performance.
Features
The FDMS037N08B is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, making it suitable for various applications, including power management and switching.
2. Current Rating: It can handle continuous drain currents (I_D) up to 37A, allowing it to manage substantial loads.
3. R_DS(on): With a low on-resistance (R_DS(on)) typically around 8 mΩ, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: Designed for high-speed switching, it reduces transition losses in applications like inverters and DC-DC converters.
5. Package: Available in a TO-220 package, it facilitates effective heat dissipation, supporting thermal management in demanding environments.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is relatively low, allowing it to be driven effectively by standard logic levels.
Overall, the FDMS037N08B is ideal for power supplies, motor controllers, and other high-performance electronic circuits.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, making it suitable for various applications, including power management and switching.
2. Current Rating: It can handle continuous drain currents (I_D) up to 37A, allowing it to manage substantial loads.
3. R_DS(on): With a low on-resistance (R_DS(on)) typically around 8 mΩ, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: Designed for high-speed switching, it reduces transition losses in applications like inverters and DC-DC converters.
5. Package: Available in a TO-220 package, it facilitates effective heat dissipation, supporting thermal management in demanding environments.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is relatively low, allowing it to be driven effectively by standard logic levels.
Overall, the FDMS037N08B is ideal for power supplies, motor controllers, and other high-performance electronic circuits.
Package
The FDMS037N08B is packaged in a TO-220 format. This type of package is commonly used for power MOSFETs, providing good heat dissipation and easy mounting on heat sinks.
Pinout
The FDMS037N08B is a N-channel MOSFET with a total of 8 pins. Its primary functions include acting as a switch or amplifier in various electronic circuits. The pin configuration is as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): Connects to the load and carries the current when the MOSFET is on.
3. Source (S): Connected to ground or the lower potential side of the circuit.
The device is designed for high efficiency, featuring low on-resistance and fast switching capabilities, making it suitable for applications such as power management, DC-DC converters, and motor control. The FDMS037N08B is rated for a maximum V_DS of 80V and an I_D of approximately 37A, making it versatile for various power applications. Always refer to the manufacturer's datasheet for detailed specifications and ratings.
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): Connects to the load and carries the current when the MOSFET is on.
3. Source (S): Connected to ground or the lower potential side of the circuit.
The device is designed for high efficiency, featuring low on-resistance and fast switching capabilities, making it suitable for applications such as power management, DC-DC converters, and motor control. The FDMS037N08B is rated for a maximum V_DS of 80V and an I_D of approximately 37A, making it versatile for various power applications. Always refer to the manufacturer's datasheet for detailed specifications and ratings.
Manufacturer
The FDMS037N08B is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor Corporation. Fairchild Semiconductor was known for its production of a wide range of semiconductor products, including power MOSFETs, analog and mixed-signal ICs, and optoelectronics. The company specialized in providing solutions for various applications such as automotive, industrial, and consumer electronics. ON Semiconductor continues to build on Fairchild's legacy by offering innovative semiconductor technologies and robust solutions to meet the needs of diverse markets.
Application
The FDMS037N08B is an N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor control, and battery management systems. Its low on-resistance and high efficiency make it suitable for switching applications in power supplies, LED drivers, and automotive systems, particularly in electric vehicles and renewable energy systems.
Equivalent
The FDMS037N08B is an N-channel MOSFET. Equivalent products include:
1. IRF3708
2. AOD370N08
3. BSS138
4. STP8NK80Z
Ensure to check the specific datasheets for voltage, current, and thermal characteristics to confirm compatibility for your application.
1. IRF3708
2. AOD370N08
3. BSS138
4. STP8NK80Z
Ensure to check the specific datasheets for voltage, current, and thermal characteristics to confirm compatibility for your application.
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