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FDL100N50F
MOSFET N-CH 500V 100A TO264-3
- メーカー
- Mfr。パート #FDL100N50F
- パッケージ TO-264-3
- データシート FDL100N50F DataSheet
- 在庫中4382
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仕様
| Package | Tube |
| Series | UniFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 55mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 238 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 12000 pF @ 25 V |
| PowerDissipation(Max) | 2500W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-264-3 |
概要
Description
The FDL100N50F is a high-performance N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_ds) of 50V and a continuous drain current (I_d) of 100A, making it suitable for various power management tasks, including switching and amplification. Its low on-resistance (R_ds(on)) ensures efficient operation, minimizing power loss and heat generation during use.
This MOSFET is typically used in applications like power supplies, motor drives, and DC-DC converters, where high efficiency and fast switching speeds are crucial. It offers robust thermal performance, allowing it to handle significant power loads effectively. The device is packaged in a TO-220 or similar form factor, aiding in heat dissipation and ease of mounting onto heat sinks.
When designing circuits with the FDL100N50F, it is essential to consider gate drive requirements and ensure adequate thermal management for optimal performance. Overall, the FDL100N50F is a reliable choice for engineers seeking efficient power solutions in modern electronic designs.
This MOSFET is typically used in applications like power supplies, motor drives, and DC-DC converters, where high efficiency and fast switching speeds are crucial. It offers robust thermal performance, allowing it to handle significant power loads effectively. The device is packaged in a TO-220 or similar form factor, aiding in heat dissipation and ease of mounting onto heat sinks.
When designing circuits with the FDL100N50F, it is essential to consider gate drive requirements and ensure adequate thermal management for optimal performance. Overall, the FDL100N50F is a reliable choice for engineers seeking efficient power solutions in modern electronic designs.
Features
The FDL100N50F is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: 500V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling up to 100A, allowing for robust performance in power circuits.
3. On-Resistance (RDS(on)): Low on-resistance (~0.2Ω), which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage (VGS): Typically between 2-4V, enabling compatibility with various gate drive levels.
5. High Speed: Fast switching capabilities, beneficial for applications like switch-mode power supplies and inverters.
6. Thermal Performance: Designed for effective heat dissipation, which enhances reliability and longevity in demanding environments.
7. Package Type: Available in TO-220 or similar packages, facilitating easy mounting and heat sink integration.
These features make the FDL100N50F suitable for various applications, including industrial drives, automotive, and renewable energy systems.
1. Voltage Rating: 500V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling up to 100A, allowing for robust performance in power circuits.
3. On-Resistance (RDS(on)): Low on-resistance (~0.2Ω), which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage (VGS): Typically between 2-4V, enabling compatibility with various gate drive levels.
5. High Speed: Fast switching capabilities, beneficial for applications like switch-mode power supplies and inverters.
6. Thermal Performance: Designed for effective heat dissipation, which enhances reliability and longevity in demanding environments.
7. Package Type: Available in TO-220 or similar packages, facilitating easy mounting and heat sink integration.
These features make the FDL100N50F suitable for various applications, including industrial drives, automotive, and renewable energy systems.
Package
The FDL100N50F is typically available in a TO-220 package type. This package design features a metal tab for heat dissipation, making it suitable for high-power applications.
Pinout
The FDL100N50F is a N-channel MOSFET with a pin count of 3. The functions of the pins are as follows:
1. Gate (G): This pin controls the MOSFET's switching action. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is in the ON state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the MOSFET.
The FDL100N50F is designed for high-efficiency applications, featuring low on-resistance and high-speed switching capabilities. Its maximum voltage rating is 50V, and it can handle continuous currents up to 100A, making it suitable for power management and conversion applications.
1. Gate (G): This pin controls the MOSFET's switching action. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is in the ON state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the MOSFET.
The FDL100N50F is designed for high-efficiency applications, featuring low on-resistance and high-speed switching capabilities. Its maximum voltage rating is 50V, and it can handle continuous currents up to 100A, making it suitable for power management and conversion applications.
Manufacturer
The FDL100N50F is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor is a company that specializes in designing and manufacturing a wide range of semiconductor products, including power management, analog, and mixed-signal devices. The company focuses on providing innovative solutions for various industries, such as automotive, industrial, and consumer electronics. Fairchild was known for its expertise in power transistors and integrated circuits, making it a key player in the semiconductor market before its acquisition by ON Semiconductor in 2016.
Application
The FDL100N50F is a N-channel MOSFET commonly used in various applications such as power management, switching power supplies, motor control, and DC-DC converters. Its high efficiency and low on-resistance make it suitable for automotive, industrial, and renewable energy systems, as well as in consumer electronics for power regulation and energy savings.
Equivalent
The FDL100N50F is an N-channel MOSFET with similar specifications to the IRF320, STP100N50, and STW100N50. For equivalent products, look for MOSFETs with similar voltage ratings (50V), current ratings (100A), and Rds(on) characteristics. Always check the datasheets for detailed specifications to ensure compatibility.
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