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FDH45N50F-F133
MOSFET N-CH 500V 45A TO247-3
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- Mfr。パート #FDH45N50F-F133
- パッケージ TO247-3
- データシート
- 在庫中7521
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仕様
| Package | Bulk,Tube |
| Series | UniFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 45A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 120mOhm @ 22.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 137 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 6630 pF @ 25 V |
| PowerDissipation(Max) | 625W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
概要
Description
The FDH45N50F-F133 is a high-voltage N-channel MOSFET designed for power management applications. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) rating of up to 45A. This MOSFET is characterized by low on-resistance (R_DS(on)), which enhances efficiency and reduces power loss during operation. It is commonly used in switch mode power supplies, motor drivers, and high-voltage applications due to its capability to handle significant power levels.
Key specifications include a gate threshold voltage (V_GS(th)) range typically between 2V to 4V, making it suitable for various gate drive levels. The device is housed in a TO-220 package, which provides efficient thermal management and easy mounting.
Overall, the FDH45N50F-F133 is ideal for applications requiring reliable switching performance and thermal efficiency in a compact form factor.
Key specifications include a gate threshold voltage (V_GS(th)) range typically between 2V to 4V, making it suitable for various gate drive levels. The device is housed in a TO-220 package, which provides efficient thermal management and easy mounting.
Overall, the FDH45N50F-F133 is ideal for applications requiring reliable switching performance and thermal efficiency in a compact form factor.
Features
The FDH45N50F-F133 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: 500V, making it suitable for high-voltage applications.
2. Current Rating: Can handle continuous drain currents up to 45A.
3. RDS(on): Low on-resistance, typically around 0.46Ω at a gate-source voltage of 10V, enhancing efficiency.
4. Gate Threshold Voltage: VGS(th) ranges from 2V to 4V, allowing for effective switching.
5. Fast Switching Times: Optimized for rapid switching, minimizing power losses.
6. Package Type: Available in TO-220 and other packages, facilitating thermal management and ease of mounting.
7. Applications: Suitable for use in power supplies, converters, and motor drivers.
These features make the FDH45N50F-F133 an ideal choice for various power electronic circuits requiring robust performance and reliability.
1. Voltage Rating: 500V, making it suitable for high-voltage applications.
2. Current Rating: Can handle continuous drain currents up to 45A.
3. RDS(on): Low on-resistance, typically around 0.46Ω at a gate-source voltage of 10V, enhancing efficiency.
4. Gate Threshold Voltage: VGS(th) ranges from 2V to 4V, allowing for effective switching.
5. Fast Switching Times: Optimized for rapid switching, minimizing power losses.
6. Package Type: Available in TO-220 and other packages, facilitating thermal management and ease of mounting.
7. Applications: Suitable for use in power supplies, converters, and motor drivers.
These features make the FDH45N50F-F133 an ideal choice for various power electronic circuits requiring robust performance and reliability.
Package
The FDH45N50F-F133 is typically packaged in an TO-220 format. This package type is designed for power transistors and provides good thermal performance and ease of mounting on heat sinks.
Pinout
The FDH45N50F-F133 is a high-voltage N-channel MOSFET designed for various applications, including power management and switching. It features a total of 3 pins.
Pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's on/off state. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the main current enters the MOSFET. It connects to the load or power supply.
3. Source (S): This pin is the output of the MOSFET, connecting to the ground or the lower potential in the circuit.
The FDH45N50F-F133 is typically used in applications requiring high efficiency and low on-resistance, suitable for use in power supplies and motor control. Be sure to refer to the specific datasheet for detailed electrical characteristics and ratings.
Pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's on/off state. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the main current enters the MOSFET. It connects to the load or power supply.
3. Source (S): This pin is the output of the MOSFET, connecting to the ground or the lower potential in the circuit.
The FDH45N50F-F133 is typically used in applications requiring high efficiency and low on-resistance, suitable for use in power supplies and motor control. Be sure to refer to the specific datasheet for detailed electrical characteristics and ratings.
Manufacturer
The FDH45N50F-F133 is manufactured by Fairchild Semiconductor, a company that specializes in designing and producing semiconductor solutions. Fairchild Semiconductor is well-known for its wide range of products, including power management, signal management, and discrete semiconductors, serving various industries such as consumer electronics, automotive, and industrial applications. The company focuses on innovation in semiconductor technology, contributing to advancements in energy efficiency and performance. In 2016, Fairchild was acquired by ON Semiconductor, further expanding its capabilities and product offerings in the semiconductor market.
Application
The FDH45N50F-F133 is a high-voltage N-channel MOSFET commonly used in power supplies, industrial motor drives, and switch-mode power converters. Its applications include inverters, power amplifiers, and high-efficiency power management systems. It is suitable for use in electric vehicles, renewable energy systems, and other high-performance electronic circuits requiring efficient switching and thermal management.
Equivalent
The FDH45N50F-F133 is a 500V MOSFET, typically used in high-voltage applications. Equivalent products include:
1. IRF450
2. STP45NF50
3. FQP45N50
4. MTP45N50
Always verify specifications like VDS, ID, RDS(on), and package type for compatibility in specific applications.
1. IRF450
2. STP45NF50
3. FQP45N50
4. MTP45N50
Always verify specifications like VDS, ID, RDS(on), and package type for compatibility in specific applications.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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