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FDH44N50
MOSFET N-CH 500V 44A TO247-3
- メーカー
- Mfr。パート #FDH44N50
- パッケージ TO-247-3
- データシート
- 在庫中2030
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仕様
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 44A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 120mOhm @ 22A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 108 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 5335 pF @ 25 V |
| PowerDissipation(Max) | 750W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
概要
Description
FDH44N50 is a high-voltage N-channel MOSFET designed for power applications. It has a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 44A. The device is known for its low on-resistance (R_DS(on)), which minimizes conduction losses, making it suitable for tasks like switching power supplies, motor drives, and other high-efficiency applications.
The FDH44N50 features a fast switching speed, enabling efficient operation in high-frequency applications. Its rugged construction allows it to handle high energy and thermal stresses. Additionally, it comes in a TO-220 package, which facilitates effective heat dissipation.
When using this MOSFET, it's essential to consider parameters like gate threshold voltage (V_GS(th)), maximum gate-source voltage (V_GS), and thermal resistance to ensure reliable performance in specific circuit designs. Overall, the FDH44N50 is an excellent choice for engineers seeking a reliable and efficient component for their high-voltage applications.
The FDH44N50 features a fast switching speed, enabling efficient operation in high-frequency applications. Its rugged construction allows it to handle high energy and thermal stresses. Additionally, it comes in a TO-220 package, which facilitates effective heat dissipation.
When using this MOSFET, it's essential to consider parameters like gate threshold voltage (V_GS(th)), maximum gate-source voltage (V_GS), and thermal resistance to ensure reliable performance in specific circuit designs. Overall, the FDH44N50 is an excellent choice for engineers seeking a reliable and efficient component for their high-voltage applications.
Features
The FDH44N50 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 44A, providing significant power handling capability.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.5Ω, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling effective drive with standard gate voltages.
5. Package Type: Typically available in TO-220 or similar packages, facilitating heat dissipation and easy mounting.
6. Fast Switching Speed: Suitable for switching applications, reducing energy losses in high-frequency environments.
These characteristics make the FDH44N50 ideal for power supplies, motor control, and other high-efficiency applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 44A, providing significant power handling capability.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.5Ω, which enhances efficiency and reduces heat generation during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling effective drive with standard gate voltages.
5. Package Type: Typically available in TO-220 or similar packages, facilitating heat dissipation and easy mounting.
6. Fast Switching Speed: Suitable for switching applications, reducing energy losses in high-frequency environments.
These characteristics make the FDH44N50 ideal for power supplies, motor control, and other high-efficiency applications.
Package
The FDH44N50 is typically packaged in a TO-220 form factor, which is a standard package for power MOSFETs. This package provides good thermal management and ease of mounting to heatsinks, making it suitable for high-power applications.
Pinout
The FDH44N50 is a high-voltage N-channel MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's switching function. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): The drain pin is where the load current enters the MOSFET. It connects to the high-side of the load in a typical configuration.
3. Source (S): This pin serves as the output for the load current. It is connected to the ground or negative terminal in most applications.
The FDH44N50 is primarily used in power switching applications, as it can handle a maximum drain-source voltage of 500V and a continuous drain current of 44A. Its features make it suitable for applications such as motor control, power supplies, and inverters.
1. Gate (G): This pin controls the MOSFET's switching function. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): The drain pin is where the load current enters the MOSFET. It connects to the high-side of the load in a typical configuration.
3. Source (S): This pin serves as the output for the load current. It is connected to the ground or negative terminal in most applications.
The FDH44N50 is primarily used in power switching applications, as it can handle a maximum drain-source voltage of 500V and a continuous drain current of 44A. Its features make it suitable for applications such as motor control, power supplies, and inverters.
Manufacturer
The FDH44N50 is manufactured by Fairchild Semiconductor, a company known for producing a wide range of semiconductor products, including power transistors, diodes, and integrated circuits. Fairchild Semiconductor specializes in providing solutions for various applications, including power management, automotive, and industrial sectors. Founded in 1957, it has a long history in the semiconductor industry and is recognized for innovation in power and analog technologies. In 2016, Fairchild was acquired by ON Semiconductor, further expanding its capabilities and product offerings in the semiconductor market.
Application
FDH44N50 is a high-voltage N-channel MOSFET commonly used in applications such as power supplies, motor drive circuits, and switched-mode power supplies (SMPS). Its ability to handle high voltages and currents makes it suitable for industrial automation, renewable energy systems, and electronic lighting control. Additionally, it is utilized in high-frequency applications and as a switch in various power management systems.
Equivalent
The FDH44N50 is a N-channel MOSFET. Equivalent products include:
1. IRF440
2. STP44NF50
3. STP44NF50-1
4. FQP44N50
5. MTP44N50
Always check datasheets for specific characteristics to ensure compatibility in your application.
1. IRF440
2. STP44NF50
3. STP44NF50-1
4. FQP44N50
5. MTP44N50
Always check datasheets for specific characteristics to ensure compatibility in your application.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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