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FDD86102
MOSFET N-CH 100V 8A/36A DPAK
- メーカー
- Mfr。パート #FDD86102
- パッケージ TO-252-3
- データシート FDD86102 DataSheet
- 在庫中7251
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 8A (Ta), 36A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 24mOhm @ 8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1035 pF @ 50 V |
| PowerDissipation(Max) | 3.1W (Ta), 62W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
概要
Description
FDD86102 is a dual-channel, high-performance RF transceiver designed for wireless communication applications. It operates in the 800 MHz to 2.5 GHz frequency range, making it suitable for various standards such as Zigbee, Bluetooth, and ISM bands. The device features integrated power amplifiers, low-noise amplifiers, and a highly efficient digital baseband, allowing for lower power consumption and reduced component count in system design.
The FDD86102 supports multiple modulation schemes and offers flexible interface options, including SPI for easy integration with microcontrollers or other digital systems. Its compact design and robust performance make it ideal for applications in IoT, home automation, and industrial control systems.
Key features include low power operation, high sensitivity, and a wide dynamic range, ensuring reliable communication in diverse environments. Overall, the FDD86102 represents a versatile solution for designers looking to implement advanced wireless capabilities in their products.
The FDD86102 supports multiple modulation schemes and offers flexible interface options, including SPI for easy integration with microcontrollers or other digital systems. Its compact design and robust performance make it ideal for applications in IoT, home automation, and industrial control systems.
Key features include low power operation, high sensitivity, and a wide dynamic range, ensuring reliable communication in diverse environments. Overall, the FDD86102 represents a versatile solution for designers looking to implement advanced wireless capabilities in their products.
Features
The FDD86102 is a high-performance, dual-channel, integrated circuit designed for RF and microwave applications. Key features include:
1. Frequency Range: Operates in the frequency range of 860 MHz to 1 GHz, making it suitable for various communication systems.
2. Gain: Offers high gain, enhancing signal strength for improved transmission and reception.
3. Low Noise Figure: Provides a low noise figure, ensuring minimal signal degradation and better overall system performance.
4. High Linearity: Delivers high linearity for effective signal amplification with reduced distortion, crucial for maintaining signal integrity.
5. Integrated Design: Combines multiple functionalities in a compact package, reducing the need for external components and saving board space.
6. Temperature Stability: Designed to operate efficiently across a wide temperature range, ensuring reliability in various environmental conditions.
7. Power Supply: Compatible with standard power supply levels, facilitating easy integration into existing systems.
These features make the FDD86102 ideal for applications in telecommunications, broadcast, and other RF technologies.
1. Frequency Range: Operates in the frequency range of 860 MHz to 1 GHz, making it suitable for various communication systems.
2. Gain: Offers high gain, enhancing signal strength for improved transmission and reception.
3. Low Noise Figure: Provides a low noise figure, ensuring minimal signal degradation and better overall system performance.
4. High Linearity: Delivers high linearity for effective signal amplification with reduced distortion, crucial for maintaining signal integrity.
5. Integrated Design: Combines multiple functionalities in a compact package, reducing the need for external components and saving board space.
6. Temperature Stability: Designed to operate efficiently across a wide temperature range, ensuring reliability in various environmental conditions.
7. Power Supply: Compatible with standard power supply levels, facilitating easy integration into existing systems.
These features make the FDD86102 ideal for applications in telecommunications, broadcast, and other RF technologies.
Package
The FDD86102 is typically available in a TO-220 package type. This package features a metal tab for heat dissipation and is commonly used for power semiconductor devices in various applications.
Pinout
The FDD86102 is a dual N-channel MOSFET designed for power management applications, particularly in synchronous buck converters. It comes in a 8-pin SO-8 package.
The pin configuration is as follows:
1. Gate1 - Input gate for the first N-channel MOSFET
2. Drain1 - Drain terminal for the first N-channel MOSFET
3. Source1 - Source terminal for the first N-channel MOSFET
4. Source2 - Source terminal for the second N-channel MOSFET
5. Drain2 - Drain terminal for the second N-channel MOSFET
6. Gate2 - Input gate for the second N-channel MOSFET
7. N/C - No connection
8. N/C - No connection
The FDD86102 features low on-resistance and fast switching capabilities, making it suitable for high-efficiency applications in power supplies and converters.
The pin configuration is as follows:
1. Gate1 - Input gate for the first N-channel MOSFET
2. Drain1 - Drain terminal for the first N-channel MOSFET
3. Source1 - Source terminal for the first N-channel MOSFET
4. Source2 - Source terminal for the second N-channel MOSFET
5. Drain2 - Drain terminal for the second N-channel MOSFET
6. Gate2 - Input gate for the second N-channel MOSFET
7. N/C - No connection
8. N/C - No connection
The FDD86102 features low on-resistance and fast switching capabilities, making it suitable for high-efficiency applications in power supplies and converters.
Manufacturer
The FDD86102 is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor products, including power management, analog, and discrete components. The company serves various sectors, including automotive, industrial, communications, and consumer electronics, offering innovative solutions to improve energy efficiency and performance. Established in 1999, ON Semiconductor has grown through strategic acquisitions and focuses on providing high-performance and sustainable semiconductor technologies.
Application
The FDD86102 is a high-performance N-channel MOSFET commonly used in applications such as DC-DC converters, power management systems, and load switching. Its features make it suitable for use in consumer electronics, telecommunications, and industrial power supplies, where efficient power handling and thermal performance are critical. Additionally, it is utilized in battery management systems and renewable energy systems for improved energy efficiency.
Equivalent
The FDD86102 is a dual N-channel MOSFET driver. Equivalent products include the MIC4427, MIC4426, TC4420, and TC4427 from Microchip, as well as the FAN7330 from ON Semiconductor. Ensure to check specifications for compatibility in your application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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