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FDD8447L
MOSFET N-CH 40V 15.2A/50A DPAK
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- Mfr。パート #FDD8447L
- パッケージ
- データシート FDD8447L DataSheet
- 在庫中8315
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仕様
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 15.2A (Ta), 50A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 8.5mOhm @ 14A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 52 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1970 pF @ 20 V |
| PowerDissipation(Max) | 3.1W (Ta), 44W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
概要
Description
FDD8447L is an N-channel MOSFET designed for high-speed switching applications, featuring low on-resistance and fast switching capabilities. It is often used in power management, DC-DC converters, and various electronic circuits requiring efficient power control. The device typically operates at a maximum drain-source voltage of 30V and can handle continuous drain currents up to 50A, depending on the package and cooling conditions.
Its low gate threshold voltage allows it to be driven by logic-level signals, making it suitable for microcontroller interfacing. The FDD8447L is available in TO-220 and other package types, enabling versatile applications in consumer electronics, automotive systems, and industrial equipment.
Key specifications include a maximum R_ds(on) of about 8.7 mΩ, ensuring minimal power loss during operation. Overall, the FDD8447L is a reliable choice for engineers seeking efficient and compact solutions in their designs. Always refer to the datasheet for detailed electrical characteristics and thermal management guidelines.
Its low gate threshold voltage allows it to be driven by logic-level signals, making it suitable for microcontroller interfacing. The FDD8447L is available in TO-220 and other package types, enabling versatile applications in consumer electronics, automotive systems, and industrial equipment.
Key specifications include a maximum R_ds(on) of about 8.7 mΩ, ensuring minimal power loss during operation. Overall, the FDD8447L is a reliable choice for engineers seeking efficient and compact solutions in their designs. Always refer to the datasheet for detailed electrical characteristics and thermal management guidelines.
Features
The FDD8447L is a N-channel MOSFET designed for use in power management applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: It can handle continuous drain currents (I_D) up to 50A, allowing it to effectively manage high power levels.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)), usually around 10-15 mΩ, which enhances efficiency by minimizing power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is relatively low, enabling it to be driven by standard logic levels.
5. Thermal Performance: It features good thermal characteristics, allowing for efficient heat dissipation in high-load scenarios.
6. Package Type: Typically available in TO-220 or DPAK packages, facilitating easier heat sinking and PCB integration.
Overall, the FDD8447L is ideal for applications such as DC-DC converters, motor drives, and other power switching applications.
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: It can handle continuous drain currents (I_D) up to 50A, allowing it to effectively manage high power levels.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)), usually around 10-15 mΩ, which enhances efficiency by minimizing power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is relatively low, enabling it to be driven by standard logic levels.
5. Thermal Performance: It features good thermal characteristics, allowing for efficient heat dissipation in high-load scenarios.
6. Package Type: Typically available in TO-220 or DPAK packages, facilitating easier heat sinking and PCB integration.
Overall, the FDD8447L is ideal for applications such as DC-DC converters, motor drives, and other power switching applications.
Package
The FDD8447L is packaged in a TO-220 type package. This package type is commonly used for power transistors and devices, providing good thermal performance and ease of mounting.
Pinout
The FDD8447L is a dual N-channel MOSFET in a surface-mount package, specifically designed for power management applications. It typically has a total of 8 pins.
### Pin Configuration and Functions:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): Connects to the load for the first MOSFET.
3. Source 1 (S1): Source terminal for the first MOSFET, usually connected to ground.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Drain 2 (D2): Connects to the load for the second MOSFET.
6. Source 2 (S2): Source terminal for the second MOSFET, usually connected to ground.
7. Drain 1 (D1): Same as above, could be used as a common drain depending on configuration.
8. Drain 2 (D2): Same as above, could be used as a common drain depending on configuration.
These pins enable the device to efficiently switch and manage power in various electronic applications. Always refer to the specific datasheet for detailed electrical characteristics and pin functions.
### Pin Configuration and Functions:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): Connects to the load for the first MOSFET.
3. Source 1 (S1): Source terminal for the first MOSFET, usually connected to ground.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Drain 2 (D2): Connects to the load for the second MOSFET.
6. Source 2 (S2): Source terminal for the second MOSFET, usually connected to ground.
7. Drain 1 (D1): Same as above, could be used as a common drain depending on configuration.
8. Drain 2 (D2): Same as above, could be used as a common drain depending on configuration.
These pins enable the device to efficiently switch and manage power in various electronic applications. Always refer to the specific datasheet for detailed electrical characteristics and pin functions.
Manufacturer
The FDD8447L is manufactured by Nexperia, a global semiconductor company that specializes in discrete, logic, and MOSFET devices. Nexperia was originally part of NXP Semiconductors and became an independent company in 2017. They focus on high-volume manufacturing and provide a wide range of products for various applications, including automotive, industrial, and consumer electronics. Nexperia is known for its commitment to quality, reliability, and efficiency in the semiconductor industry.
Application
The FDD8447L is a N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor control, and load switching. It is suitable for high-efficiency power supplies, battery management systems, and electronic devices requiring compact, high-performance switching elements. Its low on-resistance and fast switching capabilities make it ideal for efficient energy transfer in various electronic circuits.
Equivalent
The FDD8447L is a dual N-channel MOSFET commonly used in power management applications. Equivalent products include the AO3400, IRF3708, and BSS138. Ensure to check specific datasheets for matching ratings and characteristics, such as voltage, current, and R_DS(on), to ensure compatibility in your application.
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