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FDD5614P
MOSFET P-CH 60V 15A TO252
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- Mfr。パート #FDD5614P
- パッケージ
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- 在庫中7585
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仕様
| Series | PowerTrench® |
| Part Status | Obsolete |
| Base Product Number | FDD5614 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 759 pF @ 30 V |
| Power Dissipation (Max) | 3.8W (Ta), 42W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Tape & Reel (TR) |
概要
Description
FDD5614P is a high-performance N-channel MOSFET designed for various applications, including power management, DC-DC converters, and motor drives. It features low on-resistance (R_DS(on)), enabling efficient power handling and reduced heat generation. The device is capable of handling high voltages and currents, making it suitable for demanding environments.
Key specifications typically include a maximum drain-source voltage (V_DS) rating, a high continuous drain current (I_D), and fast switching capabilities, which contribute to improved efficiency in power circuits. The FDD5614P is often packaged in a compact surface-mount format, facilitating easy integration into modern electronic designs.
Additionally, the MOSFET's thermal performance and reliability under various operating conditions are crucial for ensuring long-term operation in applications such as automotive, industrial, and consumer electronics. Overall, the FDD5614P is a versatile component that can enhance the performance of electronic systems through its advanced characteristics.
Key specifications typically include a maximum drain-source voltage (V_DS) rating, a high continuous drain current (I_D), and fast switching capabilities, which contribute to improved efficiency in power circuits. The FDD5614P is often packaged in a compact surface-mount format, facilitating easy integration into modern electronic designs.
Additionally, the MOSFET's thermal performance and reliability under various operating conditions are crucial for ensuring long-term operation in applications such as automotive, industrial, and consumer electronics. Overall, the FDD5614P is a versatile component that can enhance the performance of electronic systems through its advanced characteristics.
Features
The FDD5614P is an N-channel MOSFET designed for power management and switching applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (Vds) of 60V.
2. Current Rating: The continuous drain current (Id) can handle up to 60A, making it suitable for high-current applications.
3. Rds(on): Low on-resistance (Rds(on)), typically around 14 mΩ, which enhances efficiency by minimizing power losses during operation.
4. Gate Threshold Voltage (Vgs): Moderate gate threshold voltage, allowing for effective switching with standard gate drive voltages.
5. Package Type: Often available in TO-220 or DPAK packages, facilitating easy integration into various circuits.
6. Thermal Performance: Good thermal characteristics, enabling operation in demanding environments.
7. Fast Switching: Designed for fast switching speeds, reducing transition losses and improving overall system performance.
These features make the FDD5614P suitable for applications in power supplies, motor drives, and other high-efficiency power conversion circuits.
1. Voltage Rating: It typically has a maximum drain-source voltage (Vds) of 60V.
2. Current Rating: The continuous drain current (Id) can handle up to 60A, making it suitable for high-current applications.
3. Rds(on): Low on-resistance (Rds(on)), typically around 14 mΩ, which enhances efficiency by minimizing power losses during operation.
4. Gate Threshold Voltage (Vgs): Moderate gate threshold voltage, allowing for effective switching with standard gate drive voltages.
5. Package Type: Often available in TO-220 or DPAK packages, facilitating easy integration into various circuits.
6. Thermal Performance: Good thermal characteristics, enabling operation in demanding environments.
7. Fast Switching: Designed for fast switching speeds, reducing transition losses and improving overall system performance.
These features make the FDD5614P suitable for applications in power supplies, motor drives, and other high-efficiency power conversion circuits.
Package
The FDD5614P is typically available in a TO-220 package type. This package is designed for high-power applications, providing efficient heat dissipation and ease of mounting on heatsinks.
Pinout
The FDD5614P is a N-channel MOSFET packaged in a TO-220 form factor. It features 3 pins:
1. Gate (G) - This pin is used to control the MOSFET's operation. A voltage applied here allows current to flow between the drain and source.
2. Drain (D) - This pin connects to the load and is where the current flows out of the MOSFET when it is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the circuit, allowing current to flow from the drain to the source when the gate is activated.
The FDD5614P is commonly used in power management applications, motor control, and switching applications due to its low on-resistance and high-speed switching capabilities.
1. Gate (G) - This pin is used to control the MOSFET's operation. A voltage applied here allows current to flow between the drain and source.
2. Drain (D) - This pin connects to the load and is where the current flows out of the MOSFET when it is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the circuit, allowing current to flow from the drain to the source when the gate is activated.
The FDD5614P is commonly used in power management applications, motor control, and switching applications due to its low on-resistance and high-speed switching capabilities.
Manufacturer
The FDD5614P is manufactured by ON Semiconductor, a company that specializes in semiconductor solutions. ON Semiconductor develops a wide range of products, including power management, analog, and digital solutions, catering to various industries such as automotive, industrial, and consumer electronics. The company focuses on energy-efficient technologies and is known for its commitment to sustainability and innovation in the semiconductor market.
Application
The FDD5614P is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, and motor control. Its low RDS(on) and fast switching capabilities make it suitable for switch-mode power supplies, battery management systems, and lighting control. Additionally, it can be employed in automotive applications and other high-efficiency systems requiring reliable switching performance.
Equivalent
The FDD5614P is a dual N-channel MOSFET, often used in power management applications. Equivalent products include the BSS138, BSS84, and the NXP's FDD5614. Other similar options might include the IRF740 or IRF3205, depending on specific circuit requirements. Always check the datasheets for exact specifications to ensure compatibility.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
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