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FDC637BNZ
MOSFET N-CH 20V 6.2A SUPERSOT6
- メーカー
- Mfr。パート #FDC637BNZ
- パッケージ
- データシート FDC637BNZ DataSheet
- 在庫中13878
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仕様
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 6.2A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 24mOhm @ 6.2A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 12 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 895 pF @ 10 V |
| PowerDissipation(Max) | 1.6W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SuperSOT™-6 |
概要
Description
FDC637BNZ is a high-performance, dual operational amplifier designed for various applications, including signal conditioning, filtering, and amplification in audio and instrumentation systems. It features low noise and low distortion characteristics, making it suitable for high-fidelity audio applications. The device operates on a wide supply voltage range, ensuring versatility in different circuit configurations.
Key features include a high gain bandwidth product, low input offset voltage, and high input impedance, which help in maintaining signal integrity. The FDC637BNZ is typically packaged in a compact form factor, facilitating easier integration into both consumer and industrial electronic devices. Its robust design and reliability make it a popular choice among engineers for precision applications that require stable and accurate signal processing.
Overall, the FDC637BNZ is an essential component in modern electronic design, providing efficient solutions for amplifying and processing analog signals with minimal distortion.
Key features include a high gain bandwidth product, low input offset voltage, and high input impedance, which help in maintaining signal integrity. The FDC637BNZ is typically packaged in a compact form factor, facilitating easier integration into both consumer and industrial electronic devices. Its robust design and reliability make it a popular choice among engineers for precision applications that require stable and accurate signal processing.
Overall, the FDC637BNZ is an essential component in modern electronic design, providing efficient solutions for amplifying and processing analog signals with minimal distortion.
Features
The FDC637BNZ is a high-performance N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Handling: It can handle a continuous drain current (I_D) of up to 40A, providing robust performance for high-current applications.
3. Low On-Resistance: The R_DS(on) is typically very low (around 8 mΩ), which minimizes power losses and improves efficiency during operation.
4. Fast Switching: The device supports high-speed switching, ideal for applications like DC-DC converters and motor control.
5. Thermal Performance: It features a thermal resistance that allows for effective heat dissipation, maintaining reliable operation at elevated temperatures.
6. Package Type: Available in a compact package, facilitating PCB space-saving designs.
Overall, the FDC637BNZ is well-suited for efficient power management in consumer electronics, automotive applications, and industrial systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Handling: It can handle a continuous drain current (I_D) of up to 40A, providing robust performance for high-current applications.
3. Low On-Resistance: The R_DS(on) is typically very low (around 8 mΩ), which minimizes power losses and improves efficiency during operation.
4. Fast Switching: The device supports high-speed switching, ideal for applications like DC-DC converters and motor control.
5. Thermal Performance: It features a thermal resistance that allows for effective heat dissipation, maintaining reliable operation at elevated temperatures.
6. Package Type: Available in a compact package, facilitating PCB space-saving designs.
Overall, the FDC637BNZ is well-suited for efficient power management in consumer electronics, automotive applications, and industrial systems.
Package
The FDC637BNZ is offered in a SOIC-8 (Small Outline Integrated Circuit) package type, which is a surface-mount package commonly used for integrated circuits, providing a compact design suitable for space-constrained applications.
Pinout
The FDC637BNZ is a dual N-channel MOSFET driver with a pin count of 8. It is typically used in applications requiring high-speed switching, such as in power management and motor control circuits.
The pin configuration is as follows:
1. IN - Input signal for controlling the gate of the MOSFET.
2. GND - Ground reference.
3. VDD - Supply voltage input.
4. OUT - Output signal to drive the MOSFET gate.
5. IN - Second input signal for controlling the second MOSFET.
6. GND - Ground reference (same as the first GND).
7. VDD - Supply voltage input (same as the first VDD).
8. OUT - Output signal to drive the second MOSFET gate.
The device provides low on-resistance and fast switching times, making it suitable for efficient power applications. For detailed specifications, refer to the manufacturer's datasheet.
The pin configuration is as follows:
1. IN - Input signal for controlling the gate of the MOSFET.
2. GND - Ground reference.
3. VDD - Supply voltage input.
4. OUT - Output signal to drive the MOSFET gate.
5. IN - Second input signal for controlling the second MOSFET.
6. GND - Ground reference (same as the first GND).
7. VDD - Supply voltage input (same as the first VDD).
8. OUT - Output signal to drive the second MOSFET gate.
The device provides low on-resistance and fast switching times, making it suitable for efficient power applications. For detailed specifications, refer to the manufacturer's datasheet.
Manufacturer
The FDC637BNZ is a product manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of semiconductor components, including analog, digital, and mixed-signal devices. The company serves various industries, including automotive, industrial, communications, and consumer electronics, providing essential components for applications such as power management, signal processing, and sensor technologies. Founded in 1999, ON Semiconductor has grown through both organic growth and acquisitions, positioning itself as a key player in the semiconductor market.
Application
The FDC637BNZ is a dual high-speed, low-side MOSFET driver primarily used in applications such as motor control, power management, and DC-DC converters. Its fast switching capabilities make it suitable for driving MOSFETs in switching power supplies, inverters, and automotive systems. Additionally, it can be used in high-frequency applications where precise control of power devices is essential.
Equivalent
The FDC637BNZ chip is a dual N-channel MOSFET. Equivalent products include the BSS138, AO3400, and IRF3708, which offer similar electrical characteristics like voltage and current ratings. However, always verify specific parameters such as threshold voltage, R_DS(on), and package type to ensure compatibility in your application.
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