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FDC6333C
MOSFET N/P-CH 30V 2.5A/2A SSOT6
- メーカー
- Mfr。パート #FDC6333C
- パッケージ SSOT-6
- データシート
- 在庫中4302
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 2.5A, 2A |
| RdsOn(Max)@IdVgs | 95mOhm @ 2.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 6.6nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 282pF @ 15V |
| Power-Max | 700mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SOT-23-6 Thin, TSOT-23-6 |
概要
Description
FDC6333C is a high-performance, dual N-channel MOSFET designed for power management applications, particularly in synchronous rectification and DC-DC conversion. It features low on-resistance, high-speed switching capabilities, and is optimized for efficiency, making it suitable for use in power supplies, battery management systems, and various consumer electronics.
With a maximum drain-source voltage rating of 30V and a continuous drain current of up to 33A, the FDC6333C is ideal for applications requiring high current handling. Its compact package allows for space-efficient designs while ensuring reliable thermal performance.
The device's low gate charge (Qg) enables faster switching times, reducing power losses and improving overall efficiency. Additionally, it has built-in protection features against overvoltage and thermal overload, enhancing the robustness of the circuit designs. Overall, the FDC6333C is a versatile choice for engineers looking to improve power efficiency and performance in their designs.
With a maximum drain-source voltage rating of 30V and a continuous drain current of up to 33A, the FDC6333C is ideal for applications requiring high current handling. Its compact package allows for space-efficient designs while ensuring reliable thermal performance.
The device's low gate charge (Qg) enables faster switching times, reducing power losses and improving overall efficiency. Additionally, it has built-in protection features against overvoltage and thermal overload, enhancing the robustness of the circuit designs. Overall, the FDC6333C is a versatile choice for engineers looking to improve power efficiency and performance in their designs.
Features
The FDC6333C is a dual N-channel MOSFET designed for power management applications. Key features include:
1. Low RDS(on): Provides efficient power conversion with minimal conduction losses.
2. High Speed Switching: Suitable for applications requiring fast switching speeds, improving overall efficiency.
3. Compact Package: Typically available in a compact SO-8 or similar package, saving PCB space.
4. Wide Voltage Range: Supports a broad range of gate-source voltages, enhancing design flexibility.
5. Thermal Performance: Designed to manage heat effectively, allowing for higher power handling.
6. Robustness: Offers high reliability under varying conditions, making it suitable for automotive and industrial applications.
Overall, the FDC6333C is ideal for use in synchronous rectification, DC-DC converters, and other power management systems where efficiency and space are key considerations.
1. Low RDS(on): Provides efficient power conversion with minimal conduction losses.
2. High Speed Switching: Suitable for applications requiring fast switching speeds, improving overall efficiency.
3. Compact Package: Typically available in a compact SO-8 or similar package, saving PCB space.
4. Wide Voltage Range: Supports a broad range of gate-source voltages, enhancing design flexibility.
5. Thermal Performance: Designed to manage heat effectively, allowing for higher power handling.
6. Robustness: Offers high reliability under varying conditions, making it suitable for automotive and industrial applications.
Overall, the FDC6333C is ideal for use in synchronous rectification, DC-DC converters, and other power management systems where efficiency and space are key considerations.
Package
The FDC6333C is available in a 16-lead TSSOP (Thin Shrink Small Outline Package) format.
Pinout
The FDC6333C is a dual N-channel MOSFET driver typically used in power management applications. It has a total of 8 pins. The pin functions are as follows:
1. GND (Pin 1): Ground connection.
2. VS (Pin 2): Supply voltage input.
3. BOOT (Pin 3): Bootstrapped voltage for driving high-side MOSFET.
4. PHASE (Pin 4): Connection to the source of the high-side MOSFET.
5. SGND (Pin 5): Signal ground for the logic side.
6. COMP (Pin 6): Compensation network connection for stability.
7. LO (Pin 7): Low-side MOSFET gate driver output.
8. HO (Pin 8): High-side MOSFET gate driver output.
These pins facilitate the driving of high-side and low-side MOSFETs in synchronous buck converters, enabling efficient power conversion.
1. GND (Pin 1): Ground connection.
2. VS (Pin 2): Supply voltage input.
3. BOOT (Pin 3): Bootstrapped voltage for driving high-side MOSFET.
4. PHASE (Pin 4): Connection to the source of the high-side MOSFET.
5. SGND (Pin 5): Signal ground for the logic side.
6. COMP (Pin 6): Compensation network connection for stability.
7. LO (Pin 7): Low-side MOSFET gate driver output.
8. HO (Pin 8): High-side MOSFET gate driver output.
These pins facilitate the driving of high-side and low-side MOSFETs in synchronous buck converters, enabling efficient power conversion.
Manufacturer
The FDC6333C is manufactured by Texas Instruments (TI), a leading technology company known for its semiconductor products and innovative solutions. Texas Instruments specializes in designing and manufacturing analog and embedded processing chips, which are widely used in various applications, including automotive, industrial, consumer electronics, and communications. Founded in 1930, TI has established itself as a key player in the global electronics market, contributing to advancements in technology through its extensive range of products and commitment to research and development.
Application
The FDC6333C is primarily used in applications involving capacitive sensing, such as touch screens, proximity sensors, and liquid level measurement. It is also suitable for industrial automation, smart home devices, and IoT applications where accurate capacitance measurement is crucial. Additionally, it can be employed in consumer electronics and medical devices for user interface interactions and environmental monitoring.
Equivalent
The FDC6333C is a dual N-channel MOSFET driver. Equivalent products include the following:
1. FDC6331C
2. FDC6330C
3. FDC6334C
4. MIC4427
5. MIC4426
Ensure to verify specific parameters like voltage, current ratings, and package types for compatibility in your application.
1. FDC6331C
2. FDC6330C
3. FDC6334C
4. MIC4427
5. MIC4426
Ensure to verify specific parameters like voltage, current ratings, and package types for compatibility in your application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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