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FDB86135
MOSFET N-CH 100V 75A D2PAK
- メーカー
- Mfr。パート #FDB86135
- パッケージ
- データシート FDB86135 DataSheet
- 在庫中29978
100% オリジナル &新しい
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365日の保証
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仕様
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 75A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.5mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 116 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 7295 pF @ 25 V |
| PowerDissipation(Max) | 2.4W (Ta), 227W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
概要
Description
FDB86135 is a compound that has garnered attention in pharmacological research, particularly for its potential therapeutic applications. It is often studied for its effects on specific biological targets, which may include various receptors or enzymes involved in disease processes.
Research on FDB86135 may focus on its mechanisms of action, efficacy, and safety profile, as well as its possible role in treating conditions such as cancer, neurological disorders, or metabolic diseases. Detailed studies typically assess its pharmacokinetics, bioavailability, and potential side effects.
As with many investigational compounds, further research is needed to fully understand its therapeutic potential and to establish it as a viable treatment option. Comprehensive studies will also help in determining optimal dosing regimens and identifying patient populations that may benefit most from its use.
Overall, FDB86135 represents a promising area of inquiry in drug development, reflecting ongoing efforts to discover new therapies that can improve patient outcomes.
Research on FDB86135 may focus on its mechanisms of action, efficacy, and safety profile, as well as its possible role in treating conditions such as cancer, neurological disorders, or metabolic diseases. Detailed studies typically assess its pharmacokinetics, bioavailability, and potential side effects.
As with many investigational compounds, further research is needed to fully understand its therapeutic potential and to establish it as a viable treatment option. Comprehensive studies will also help in determining optimal dosing regimens and identifying patient populations that may benefit most from its use.
Overall, FDB86135 represents a promising area of inquiry in drug development, reflecting ongoing efforts to discover new therapies that can improve patient outcomes.
Features
The FDB86135 is a high-performance, integrated circuit commonly used in power management applications. It typically features:
1. High Efficiency: Designed for low power loss, allowing it to operate efficiently in various applications.
2. Integrated Drivers: Contains high-side and low-side drivers for controlling MOSFETs in power conversion circuits.
3. PWM Control: Supports pulse width modulation for improved control over output voltage and current.
4. Protection Features: Includes over-voltage, under-voltage, and thermal shutdown protections to enhance reliability.
5. Compact Size: Designed in a small package, making it suitable for space-constrained applications.
6. Wide Input Voltage Range: Accommodates a broad range of input voltages, increasing versatility across different systems.
7. Fast Switching: Capable of high-frequency operation, enabling faster response times in power regulation.
These features make the FDB86135 suitable for applications in switching power supplies, DC-DC converters, and other electronic power management systems.
1. High Efficiency: Designed for low power loss, allowing it to operate efficiently in various applications.
2. Integrated Drivers: Contains high-side and low-side drivers for controlling MOSFETs in power conversion circuits.
3. PWM Control: Supports pulse width modulation for improved control over output voltage and current.
4. Protection Features: Includes over-voltage, under-voltage, and thermal shutdown protections to enhance reliability.
5. Compact Size: Designed in a small package, making it suitable for space-constrained applications.
6. Wide Input Voltage Range: Accommodates a broad range of input voltages, increasing versatility across different systems.
7. Fast Switching: Capable of high-frequency operation, enabling faster response times in power regulation.
These features make the FDB86135 suitable for applications in switching power supplies, DC-DC converters, and other electronic power management systems.
Package
The FDB86135 is typically available in a TO-220 package type. This package is designed for efficient heat dissipation and is commonly used for power devices in various electronic applications.
Pinout
The FDB86135 is a power MOSFET designed for use in various applications such as power management and DC-DC conversion. It typically comes in a TO-220 package with a pin count of 3.
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. By applying a voltage, you can turn the device on or off.
2. Drain (D): This is where the load connects. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the power supply. The current exits through this pin when the device is conducting.
Always refer to the specific datasheet for detailed electrical characteristics and absolute maximum ratings for precise applications.
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. By applying a voltage, you can turn the device on or off.
2. Drain (D): This is where the load connects. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the power supply. The current exits through this pin when the device is conducting.
Always refer to the specific datasheet for detailed electrical characteristics and absolute maximum ratings for precise applications.
Manufacturer
The FDB86135 is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, IoT, and automotive semiconductor components. The company focuses on providing energy-efficient solutions and plays a significant role in the semiconductor industry, catering to various sectors such as automotive, industrial, communications, and consumer electronics.
Application
The FDB86135 is a high-performance N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor control, and battery management systems. Its low on-resistance and high-speed switching capabilities make it suitable for use in power supply circuits, renewable energy systems, and electric vehicles. Additionally, it is utilized in consumer electronics for efficient power delivery and thermal management.
Equivalent
The FDB86135 is a power MOSFET driver primarily used in synchronous buck converters. Equivalent products include the LM5116, MIC4426, and ISL6605, which provide similar functionality for driving high and low side MOSFETs. Always verify the specific parameters and compatibility for your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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