FDB110N15A

画像は参照用のみです。

FDB110N15A

POWER FIELD-EFFECT TRANSISTOR, 9

  • メーカー
  • Mfr。パート #FDB110N15A
  • パッケージ
  • データシート FDB110N15A DataSheet
  • 在庫中18331

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Supplier Rochester Electronics, LLC
Package Bulk
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 92A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 11mOhm @ 92A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 61 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4510 pF @ 75 V
PowerDissipation(Max) 234W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK (TO-263)

概要

Description

FDB110N15A is a N-channel power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 150V and a continuous drain current (I_D) rating of 110A, making it suitable for various power management tasks, including inverters, power supplies, and motor drivers.
This MOSFET offers low on-resistance (R_DS(on)), which minimizes power loss and improves thermal performance during operation. Its fast switching capabilities enhance efficiency in applications requiring rapid on/off cycles.
Typically packaged in a TO-220 or similar configuration, the FDB110N15A is easy to integrate into existing designs. The device is often used in automotive, industrial, and consumer electronics sectors, where reliability and performance are crucial.
Overall, the FDB110N15A is ideal for engineers seeking a robust and efficient solution for high-voltage applications.

Features

The FDB110N15A is an N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 150V, making it suitable for high-voltage applications.
2. Current Rating: It supports continuous drain current (I_D) of up to 110A, allowing it to drive substantial loads.
3. Low R_DS(on): It boasts a low on-resistance, typically around 0.09 ohms, which minimizes power loss during operation.
4. Fast Switching: Designed for rapid switching, it enables efficient performance in high-frequency applications.
5. Thermal Resistance: It has low thermal resistance, ensuring better heat dissipation and reliability under load.
6. Package Type: Available in To-220 packaging, facilitating easy integration into various electronic designs.
7. Applications: Ideal for power management, DC-DC converters, motor drives, and other high-power applications.
These features make the FDB110N15A a versatile choice for engineers looking to improve efficiency in power electronic systems.

Package

The FDB110N15A is packaged in a DPAK (TO-252) format. This surface-mount package is commonly used for power devices, offering a balance between size, thermal performance, and ease of assembly.

Pinout

The FDB110N15A is an N-channel MOSFET that typically comes in a DPAK (TO-252) package, featuring a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.

2. Drain (D) - This is the main current-carrying terminal where the load is connected. It conducts current when the MOSFET is on.

3. Source (S) - This pin connects to the ground or the negative side of the circuit. It is where the current exits the device when it is on.
The FDB110N15A is designed for high-efficiency power applications, offering low on-resistance and fast switching capabilities, making it suitable for use in power supplies and motor drivers.

Manufacturer

The FDB110N15A is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management solutions, discrete devices, and integrated circuits. The company serves various industries such as automotive, industrial, communications, and consumer electronics. Established in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor focuses on providing energy-efficient solutions to enhance the performance of electronic devices. Their product portfolio includes technologies for efficient power conversion, signal processing, and data management, catering to the growing demand for advanced electronic applications.

Application

The FDB110N15A is an N-channel MOSFET commonly used in applications such as power supply regulation, motor drives, and switching power converters. Its high current and voltage ratings make it suitable for automotive, industrial, and renewable energy systems, including solar inverters and electric vehicle controllers. Additionally, it can be utilized in consumer electronics for efficient power management.

Equivalent

The FDB110N15A is a power MOSFET, and equivalent products include the STP110N15, IRF110N15, and FQP110N15. Always check specific datasheets for compatibility regarding voltage, current ratings, and package type before substitution.

出荷

出荷方法私たち

DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。


出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

支払い

Payment Methods

支払い期間は100%前払いです。

現在、下記の支払い方法のみを受け入れています。:

1. ペイパル

2. クレジット・デビットカード

3. ワイヤー 転送