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FDB045AN08A0
MOSFET N-CH 75V 19A/90A D2PAK
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- Mfr。パート #FDB045AN08A0
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仕様
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 138 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 25 V |
| Power Dissipation (Max) | 310W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | FDB045 |
概要
Description
The FDB045AN08A0 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) rating of 45A. This MOSFET is characterized by low on-resistance (R_DS(on)), which enhances its performance in power management and switching applications.
Common applications include power supplies, motor drives, and DC-DC converters, where efficient switching is crucial for reducing heat generation and improving overall system reliability. The device typically comes in a TO-220 package, offering good thermal dissipation capabilities. Understanding its electrical characteristics, including gate threshold voltage and thermal resistance, is essential for optimal circuit design.
When using the FDB045AN08A0, proper heat sinking and circuit protection techniques should be implemented to ensure reliable operation within specified limits. Overall, its robust specifications make it a popular choice in various electronic designs requiring efficient power handling.
Common applications include power supplies, motor drives, and DC-DC converters, where efficient switching is crucial for reducing heat generation and improving overall system reliability. The device typically comes in a TO-220 package, offering good thermal dissipation capabilities. Understanding its electrical characteristics, including gate threshold voltage and thermal resistance, is essential for optimal circuit design.
When using the FDB045AN08A0, proper heat sinking and circuit protection techniques should be implemented to ensure reliable operation within specified limits. Overall, its robust specifications make it a popular choice in various electronic designs requiring efficient power handling.
Features
The FDB045AN08A0 is a power MOSFET designed for efficiency in various applications. Key features include:
1. Rating: It has a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 45A, making it suitable for high-power applications.
2. Low R_DS(on): This MOSFET boasts a low on-resistance (R_DS(on)), typically around 0.0045 ohms, which minimizes conduction losses and improves efficiency.
3. Fast Switching: It offers fast switching speeds, beneficial for applications like DC-DC converters and power management systems.
4. Package: The device is housed in a TO-220 package, providing good thermal performance and ease of mounting.
5. Thermal Resistance: It features a low thermal resistance, allowing for effective heat dissipation.
6. Applications: Commonly used in automotive, industrial, and consumer electronics applications.
These attributes make the FDB045AN08A0 suitable for a range of applications requiring reliable and efficient power management.
1. Rating: It has a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 45A, making it suitable for high-power applications.
2. Low R_DS(on): This MOSFET boasts a low on-resistance (R_DS(on)), typically around 0.0045 ohms, which minimizes conduction losses and improves efficiency.
3. Fast Switching: It offers fast switching speeds, beneficial for applications like DC-DC converters and power management systems.
4. Package: The device is housed in a TO-220 package, providing good thermal performance and ease of mounting.
5. Thermal Resistance: It features a low thermal resistance, allowing for effective heat dissipation.
6. Applications: Commonly used in automotive, industrial, and consumer electronics applications.
These attributes make the FDB045AN08A0 suitable for a range of applications requiring reliable and efficient power management.
Package
The FDB045AN08A0 is an N-channel MOSFET packaged in a TO-220 format. This package type allows for efficient heat dissipation and is commonly used in power applications due to its robust design and thermal performance.
Pinout
The FDB045AN08A0 is a N-channel MOSFET manufactured by ON Semiconductor. It features a total of 8 pins.
Here are the pin functions:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where the current flows out when the device is on.
3. Source (S): The terminal through which the current enters when the device is on.
4. Body Diode: Internal diode between the drain and source.
The device is designed for applications requiring efficient switching and low on-resistance. Its specifications make it suitable for power management, DC-DC converters, and other applications where high efficiency is crucial.
For detailed specifications and ratings, refer to the manufacturer's datasheet.
Here are the pin functions:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where the current flows out when the device is on.
3. Source (S): The terminal through which the current enters when the device is on.
4. Body Diode: Internal diode between the drain and source.
The device is designed for applications requiring efficient switching and low on-resistance. Its specifications make it suitable for power management, DC-DC converters, and other applications where high efficiency is crucial.
For detailed specifications and ratings, refer to the manufacturer's datasheet.
Manufacturer
The FDB045AN08A0 is manufactured by ON Semiconductor, a company known for its semiconductor solutions. ON Semiconductor designs and produces a wide range of electronic components, including power management, analog, discrete, and logic devices. The company serves various industries, including automotive, industrial, communications, and consumer electronics. Established in 1999, ON Semiconductor has grown through both internal development and strategic acquisitions, positioning itself as a key player in the global semiconductor market.
Application
The FDB045AN08A0 is a N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor control, and switching power supplies. Its low on-resistance and high efficiency make it suitable for automotive, industrial, and consumer electronics applications, where reliable performance and thermal management are crucial.
Equivalent
The FDB045AN08A0 is a 40V N-channel MOSFET. Equivalent products include the IRF3205, STP45NF06L, and BTA40-600V. Always verify the specifications, such as RDS(on), VGS(th), and current ratings, to ensure compatibility for your application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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