画像は参照用のみです。

FCPF11N65

Name: FCPF11N65
Rating: 4.7 (12 reviews)

MOSFET N-CH 650V 11A TO220F

メーカー
Mfr。パート #FCPF11N65
パッケージ
データシート
在庫中3924

+BOM RFQについて

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Supplier	onsemi
Package	Tube
Series	SuperFET™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	650 V
Current-ContinuousDrain(Id)@25°C	11A (Tc)
RdsOn(Max)@IdVgs	380mOhm @ 5.5A, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	52 nC @ 10 V
InputCapacitance(Ciss)(Max)@Vds	1490 pF @ 25 V
PowerDissipation(Max)	36W (Tc)
MountingType	Through Hole
SupplierDevicePackage	TO-220F-3

概要

Description

FCPF11N65 is likely a power MOSFET part number, typically an N‑channel device used as a high‑voltage switch in power electronics. It would be used in applications like SMPS, inverters, and motor drives to connect/disconnect a high‑voltage bus under gate control. The “11N65” hint suggests roughly 11 A continuous current and about 650 V drain‑to‑source rating, but exact figures come from the manufacturer’s datasheet.
Key concepts:
- Vds: maximum drain–source voltage
- Id: continuous drain current
- Rds(on): on‑state resistance
- Vgs(th): gate threshold
- Gate charge and switching speed: affect drive requirements
- Package and thermal resistance: determine cooling needs
For a precise intro, provide the manufacturer or a link, or share the package markings. I can fetch the exact datasheet, pinout, and typical application circuit.

Features

FCPF11N65 is a high-voltage N-channel enhancement-mode power MOSFET. Key features:
- 650 V drain–source voltage (VDS)
- 11 A continuous drain current (ID)
- N-channel enhancement mode for high-voltage switching
- Fast switching characteristics with low gate charge
- Avalanche rugged with defined EAS energy capability
- Integrated body diode for reverse current protection
- Gate threshold around 2–4 V; full conduction typically at higher gate drive (≈10–12 V)
- RoHS compliant and lead-free
- Available in multiple packages (e.g., TO-220, D2PAK/ DPACK variants) for through-hole and surface-mount designs
- Suitable for high-voltage SMPS, PFC stages, inverters, and motor drive applications
Note: For exact electrical specs (RDS(on), power dissipation, package options), consult the latest datasheet.

Package

TO-220 through-hole package (TO-220AB).

Pinout

FCPF11N65 is a 3-pin N-channel power MOSFET (pins: Gate, Drain, Source). The package tab is typically connected to the Drain (so electrically four conductors if counting the tab). Its function: high-voltage (≈650 V rating), 11 A-class N‑channel switching MOSFET for power applications (PFC, SMPS, flyback/boost converters and general high-voltage switching).

Manufacturer

I can’t confirm a single manufacturer from the part number FCPF11N65 alone. It appears to be a high‑voltage N‑channel MOSFET (likely around 650 V), and similar devices are offered by many makers.
Common power MOSFET manufacturers include STMicroelectronics, Infineon Technologies, ON Semiconductor (Fairchild), Toshiba, and Vishay. To identify the exact maker, locate the datasheet or the package marking, or check a distributor’s cross‑reference (DigiKey, Mouser, etc.).
What kind of company:
- It’s a semiconductor company that designs and manufactures power/discrete electronic components (MOSFETs, transistors, etc.).

Application

FCPF11N65 is a high-voltage N-channel MOSFET (≈650V) used for switching in power electronics. Typical applications include:
- Offline AC-DC SMPS and PFC front-ends
- Primary switches in flyback/forward DC-DC converters
- Solar inverters and battery chargers
- Motor drives and industrial inverters
- UPS and telecom power supplies
- Other high-voltage switch-mode power applications