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FCB070N65S3
MOSFET N-CH 650V 44A D2PAK
- メーカー
- Mfr。パート #FCB070N65S3
- パッケージ TO263
- データシート
- 在庫中3710
100% オリジナル &新しい
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperFET® III |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 44A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 70mOhm @ 22A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 4.4mA |
| GateCharge(Qg)(Max)@Vgs | 78 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 3090 pF @ 400 V |
| PowerDissipation(Max) | 312W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
概要
Description
The FCB070N65S3 is a high-performance N-channel MOSFET designed for efficient power management applications. It features a voltage rating of 650V and a continuous drain current capability of 70A, making it suitable for a variety of applications such as power supplies, motor drives, and inverter circuits.
This MOSFET is characterized by its low on-resistance (RDS(on)), which helps minimize power losses and improve thermal efficiency. With a fast switching speed, it enhances system performance in high-frequency applications. The FCB070N65S3 also includes a low gate charge, which reduces the energy needed for switching, further optimizing efficiency.
It is commonly used in automotive, industrial, and consumer electronics applications, where reliability and performance are critical. The device is typically housed in a TO-220 or similar package, facilitating heatsinking and thermal management. Overall, the FCB070N65S3 is a versatile component for modern electronic designs requiring robust power handling capabilities.
This MOSFET is characterized by its low on-resistance (RDS(on)), which helps minimize power losses and improve thermal efficiency. With a fast switching speed, it enhances system performance in high-frequency applications. The FCB070N65S3 also includes a low gate charge, which reduces the energy needed for switching, further optimizing efficiency.
It is commonly used in automotive, industrial, and consumer electronics applications, where reliability and performance are critical. The device is typically housed in a TO-220 or similar package, facilitating heatsinking and thermal management. Overall, the FCB070N65S3 is a versatile component for modern electronic designs requiring robust power handling capabilities.
Features
The FCB070N65S3 is a high-performance N-channel MOSFET designed for various applications, specifically in power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (Id) up to 70A, providing robust performance in demanding environments.
3. RDS(on): It offers a low on-resistance (RDS(on)), which reduces power loss and improves efficiency during operation.
4. Gate Threshold Voltage (Vgs): The gate threshold voltage is optimized for low drive requirements, enhancing compatibility with various control circuits.
5. Fast Switching: Its design allows for high-speed switching capabilities, making it ideal for applications like DC-DC converters and inverters.
6. Thermal Performance: The package typically features enhanced thermal characteristics for improved heat dissipation.
These attributes make the FCB070N65S3 suitable for industrial, automotive, and consumer electronics applications requiring efficient power management.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (Id) up to 70A, providing robust performance in demanding environments.
3. RDS(on): It offers a low on-resistance (RDS(on)), which reduces power loss and improves efficiency during operation.
4. Gate Threshold Voltage (Vgs): The gate threshold voltage is optimized for low drive requirements, enhancing compatibility with various control circuits.
5. Fast Switching: Its design allows for high-speed switching capabilities, making it ideal for applications like DC-DC converters and inverters.
6. Thermal Performance: The package typically features enhanced thermal characteristics for improved heat dissipation.
These attributes make the FCB070N65S3 suitable for industrial, automotive, and consumer electronics applications requiring efficient power management.
Package
The FCB070N65S3 is typically packaged in a TO-220 format. This type of package is designed for power transistors and offers good thermal dissipation, making it suitable for high-power applications.
Pinout
The FCB070N65S3 is a N-channel MOSFET manufactured by ON Semiconductor. It typically features a pin count of 5.
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET operation, allowing for turn-on and turn-off.
2. Drain (D): This pin is where the load connects; it conducts current when the MOSFET is on.
3. Source (S): This pin is connected to the ground or negative side of the power supply; it serves as the reference point for current flow.
The additional pins may include a tab or thermal pad for heat dissipation. The FCB070N65S3 is designed for high efficiency in power applications, with an emphasis on low on-resistance and fast switching capabilities. Always refer to the specific datasheet for detailed information on electrical characteristics and thermal performance.
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET operation, allowing for turn-on and turn-off.
2. Drain (D): This pin is where the load connects; it conducts current when the MOSFET is on.
3. Source (S): This pin is connected to the ground or negative side of the power supply; it serves as the reference point for current flow.
The additional pins may include a tab or thermal pad for heat dissipation. The FCB070N65S3 is designed for high efficiency in power applications, with an emphasis on low on-resistance and fast switching capabilities. Always refer to the specific datasheet for detailed information on electrical characteristics and thermal performance.
Manufacturer
The FCB070N65S3 is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in providing a wide range of semiconductor solutions, including power management, analog, and mixed-signal devices, as well as sensors and discrete components. The company serves various markets, such as automotive, industrial, telecommunications, computing, and consumer electronics. Established in 1999, ON Semiconductor has grown through strategic acquisitions and innovations, positioning itself as a key player in the semiconductor industry, focused on energy-efficient solutions and technological advancements.
Application
The FCB070N65S3 is a 650V N-channel MOSFET commonly used in applications such as power supplies, motor drives, and inverters. Its high efficiency and fast switching capabilities make it suitable for use in renewable energy systems, electric vehicles, and industrial automation. Additionally, it can be employed in electronic ballast and lighting applications, as well as in consumer electronics for efficient power management.
Equivalent
The FCB070N65S3 is an N-channel MOSFET. Equivalent products include the STP70N65M2, IRFSL70, and AOD7N65. Always verify specifications such as voltage, current ratings, and RDS(on) for compatibility before substitution.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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