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FAN7382N
IC GATE DRVR HALF-BRIDGE 8DIP
- メーカー
- Mfr。パート #FAN7382N
- パッケージ DIP-8
- データシート
- 在庫中2929
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仕様
| Package | Tube |
| ProductStatus | Obsolete |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.5V |
| Current-PeakOutput(SourceSink) | 350mA, 650mA |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 60ns, 30ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | 8-DIP (0.300, 7.62mm) |
概要
Description
The FAN7382N is a high-side gate drive IC developed by ON Semiconductor, designed for driving MOSFETs and IGBTs in various power management applications. It is typically used in applications such as motor drives, power supplies, and other systems requiring efficient high-side switching.
Key features of the FAN7382N include its ability to drive high-voltage, high-speed MOSFETs and IGBTs with optimized switching performance. It offers under-voltage lockout for both high-side and low-side gate drivers, ensuring reliable operation. The IC operates with a high supply voltage range, making it suitable for a wide variety of applications.
The FAN7382N is designed with protection features like built-in dead-time control to prevent shoot-through, and it supports bootstrap operation, which is essential for high-side driving. Its robust design helps in reducing power dissipation and improving the overall efficiency of the power management system.
Overall, the FAN7382N is a versatile and reliable choice for engineers looking to implement high-side gate driving in their designs, offering efficiency and performance in compact packaging.
Key features of the FAN7382N include its ability to drive high-voltage, high-speed MOSFETs and IGBTs with optimized switching performance. It offers under-voltage lockout for both high-side and low-side gate drivers, ensuring reliable operation. The IC operates with a high supply voltage range, making it suitable for a wide variety of applications.
The FAN7382N is designed with protection features like built-in dead-time control to prevent shoot-through, and it supports bootstrap operation, which is essential for high-side driving. Its robust design helps in reducing power dissipation and improving the overall efficiency of the power management system.
Overall, the FAN7382N is a versatile and reliable choice for engineers looking to implement high-side gate driving in their designs, offering efficiency and performance in compact packaging.
Features
The FAN7382N is a high-side gate drive IC designed for driving MOSFETs and IGBTs. Key features include:
1. High-Side Gate Drive: Designed to drive high-side N-channel power devices, providing efficient switching.
2. Floating Channel: Can operate up to 600V, making it suitable for high-voltage applications.
3. Bootstrap Operation: Utilizes a bootstrap circuit for high-side drive, aiding in efficient charge management.
4. UVLO Protection: Under-voltage lockout (UVLO) for both the high-side and low-side drivers ensures reliable operation by preventing erroneous switching.
5. CMOS Schmitt-Trigger Inputs: Ensures noise immunity and precise switching due to its Schmitt-Trigger input structure.
6. Dual Gate Drive Outputs: Offers flexibility in driving two power transistors with separate high-side and low-side outputs.
7. Fast Turn-On/Off Times: Provides efficient switching performance with rapid turn-on and turn-off times.
8. Propagation Delay Matching: Features matched propagation delays between high-side and low-side to ensure synchronous operation.
These features make the FAN7382N suitable for applications like motor drives, power supplies, and DC-DC converters requiring efficient high-side switching.
1. High-Side Gate Drive: Designed to drive high-side N-channel power devices, providing efficient switching.
2. Floating Channel: Can operate up to 600V, making it suitable for high-voltage applications.
3. Bootstrap Operation: Utilizes a bootstrap circuit for high-side drive, aiding in efficient charge management.
4. UVLO Protection: Under-voltage lockout (UVLO) for both the high-side and low-side drivers ensures reliable operation by preventing erroneous switching.
5. CMOS Schmitt-Trigger Inputs: Ensures noise immunity and precise switching due to its Schmitt-Trigger input structure.
6. Dual Gate Drive Outputs: Offers flexibility in driving two power transistors with separate high-side and low-side outputs.
7. Fast Turn-On/Off Times: Provides efficient switching performance with rapid turn-on and turn-off times.
8. Propagation Delay Matching: Features matched propagation delays between high-side and low-side to ensure synchronous operation.
These features make the FAN7382N suitable for applications like motor drives, power supplies, and DC-DC converters requiring efficient high-side switching.
Package
The FAN7382N is typically housed in an 8-DIP (Dual In-line Package) type, which is a standard through-hole package used for electronic components.
Pinout
The FAN7382N is a high-side gate driver IC designed for driving MOSFETs and IGBTs. It typically comes in an 8-pin DIP package. Here’s a brief overview of its pin configuration and functions:
1. VCC: Supply voltage input for powering the IC.
2. VB: High-side floating supply voltage.
3. HO: High-side gate drive output, connected to the gate of the high-side MOSFET or IGBT.
4. VS: High-side floating supply return. It is connected to the source of the high-side MOSFET or IGBT.
5. COM: Common ground reference for the IC.
6. LO: Low-side gate drive output, used for driving the low-side MOSFET or IGBT.
7. IN: Input signal for controlling the output states of HO and LO.
8. VSS: Ground return for the input logic.
The FAN7382N provides level-shifted gate drive outputs, allowing it to efficiently drive high-side and low-side power transistors in half-bridge or full-bridge configurations. It is commonly used in motor control and power supply applications.
1. VCC: Supply voltage input for powering the IC.
2. VB: High-side floating supply voltage.
3. HO: High-side gate drive output, connected to the gate of the high-side MOSFET or IGBT.
4. VS: High-side floating supply return. It is connected to the source of the high-side MOSFET or IGBT.
5. COM: Common ground reference for the IC.
6. LO: Low-side gate drive output, used for driving the low-side MOSFET or IGBT.
7. IN: Input signal for controlling the output states of HO and LO.
8. VSS: Ground return for the input logic.
The FAN7382N provides level-shifted gate drive outputs, allowing it to efficiently drive high-side and low-side power transistors in half-bridge or full-bridge configurations. It is commonly used in motor control and power supply applications.
Manufacturer
The FAN7382N is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a global semiconductor supplier that focuses on energy-efficient electronics. The company produces a wide variety of semiconductor components, including power management devices, sensors, and custom solutions for automotive, industrial, cloud, and IoT applications. Onsemi is known for its innovation in energy-efficient technologies, contributing to the advancement of electronics and the reduction of energy consumption across various industries.
Application
The FAN7382N is typically used in applications requiring high-voltage, high-speed gate driving, such as motor drives, power supplies, and inverters. It is suitable for driving MOSFETs and IGBTs in these systems. The IC is also employed in industrial and automotive applications that demand reliable and efficient power conversion and management.
Equivalent
The FAN7382N is a high-side gate drive IC. Equivalent products include: IR2110, IR2113, IRS2001, and UCC27714. These alternatives generally offer similar functionalities suitable for driving high-side and low-side MOSFETs. However, always check specific parameters to ensure compatibility with your application.
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